In a p-type Si at 300 K and Na = 8 × 1015 cm-3, the variation of space-charge density in the semiconductor as a function of surface potential is plotted. Then select the true statement for the weak inversion region. Given that ps and ns are hole and electron concentrations at the surface.

In a p-type Si at 300 K and Na = 8 × 1015 cm-3, the variation of spac

1.	In a p-type Si at 300 K and Na = 8 × 1015 cm-3, the variation of space-charge density in the semiconductor as a function of surface potential is plotted. Then select the true statement for the weak inversion region. Given that ps and ns are hole and electron concentrations at the surface.
A.	ps > Na
B.	ns < Na and ns > ps
C.	ns < Na and ps < Na
D.	ns > Na
Answer» C. ns < Na and ps < Na

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In a p-type Si at 300 K and Na = 8 × 1015 cm-3, the variation of space-charge density in the semiconductor as a function of surface potential is plotted. Then select the true statement for the weak inversion region. Given that ps and ns are hole and electron concentrations at the surface.

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