In a MOSFET, SiO2 breaks down breaks down at electric field of the order of 5 × 106 V/cm. For a gate oxide thickness 1000 Angstroms and channel thickness of 2 μm, what is the maximum VGS it can withstand?

In a MOSFET, SiO2 breaks down breaks down at electric field of the or

1.	In a MOSFET, SiO2 breaks down breaks down at electric field of the order of 5 × 106 V/cm. For a gate oxide thickness 1000 Angstroms and channel thickness of 2 μm, what is the maximum VGS it can withstand?
A.	5 V
B.	10 V
C.	100 V
D.	None of the above
Answer» E.

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In a MOSFET, SiO2 breaks down breaks down at electric field of the order of 5 × 106 V/cm. For a gate oxide thickness 1000 Angstroms and channel thickness of 2 μm, what is the maximum VGS it can withstand?

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