For an n-channel silicon MOSFET with 10 nm gate oxide thickness, the substrate sensitivity (∂VT/∂|VBS|) is found to be 50 mV/V at a substance voltage |VBS| = 2 V, where VT is the threshold voltage of the MOSFET. Assume that, |VBS| >> 2ϕB, where qϕB is the separation between the Fermi energy level EF and the intrinsic level Ei in the bulk. Parameters given areElectron charge (q) = 1.6 × 10-19 CVacuum permittivity (ε0) = 8.85 × 10-12 F/mRelative permittivity of silicon (εSi) = 12Relative permittivity of oxide (εox) = 4The doping concentration of the substrate is

For an n-channel silicon MOSFET with 10 nm gate oxide thickness, the s

1.	For an n-channel silicon MOSFET with 10 nm gate oxide thickness, the substrate sensitivity (∂VT/∂\|VBS\|) is found to be 50 mV/V at a substance voltage \|VBS\| = 2 V, where VT is the threshold voltage of the MOSFET. Assume that, \|VBS\| >> 2ϕB, where qϕB is the separation between the Fermi energy level EF and the intrinsic level Ei in the bulk. Parameters given areElectron charge (q) = 1.6 × 10-19 CVacuum permittivity (ε0) = 8.85 × 10-12 F/mRelative permittivity of silicon (εSi) = 12Relative permittivity of oxide (εox) = 4The doping concentration of the substrate is
A.	7.37 × 1015 cm-3
B.	9.37 × 1015 cm-3
C.	2.37 × 1015 cm-3
D.	4.37 × 1015 cm-3
Answer» B. 9.37 × 1015 cm-3

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