Consider the assertions S1,S2,S3 & S4 S1 : SiOacts as an isolation layer between the junctions in IC fabrication processS2 : SiOacts as an isolation equipment/ materialbetween thedifferent devicesS3: SiOacts as a passivation layer by preventing undesired impurities over the silicon surface.S4 : SiOactsas a di-electric between poly-silicon gate and the channel of semiconductorWhich among them is/ are precise functions of silicon dioxide in an ion implantationprocess?(Marks : 01)

• A. S1: Correct, S2: Correct, S3:Correct , S4: Correct
• B. S1: Correct, S2: Incorrect, S3: Correct , S4 : Correct
• C. S1: Correct, S2: Correct, S3 :Incorrect , S4 : Correct
• D. S1: Correct, S2: Correct, S3 : Correct, S4 : Incorrect