Explore topic-wise MCQs in GATE practice papers - Electronics & Communication.

This section includes 6 Mcqs, each offering curated multiple-choice questions to sharpen your GATE practice papers - Electronics & Communication knowledge and support exam preparation. Choose a topic below to get started.

1.

Which process plays a crucial role in transforming the pattern or layout on the working mask of silicon wafer in an IC fabrication mechanism? (Marks : 01)

A. Wafer Cleaning
B. Mask Making
C. Epitaxy
D. Photo-lithography
Answer» E.
Discussion
2.

The ratio of collector current to emitter current by maintaining collector to base voltage at a constant levelis usuallytermed as ___________ (Marks : 01)

A. Common Emitter Amplification Factor
B. Common Collector Amplification Factor
C. Common Base Amplification Factor
D. None of the above
Answer» D. None of the above
Discussion
3.

Which phenomenon in BJT is responsible for reduction in the effective base-width due to reverse-biasing of base-collector junction? (Marks : 01)

A. Hall Effect
B. Early Effect
C. Fermi-Level Effect
D. All of the above
Answer» C. Fermi-Level Effect
Discussion
4.

Consider the below mentioned assertions :A1 : Increase in doping level of p-type moves E towards the centre A2 : Increase in doping level of p-type moves E away from the centreA3: Increase in doping level of p-type results in downward shifting in EA4 : Increase in doping level of p-type results in an upward shifting in EWhich among them is/are correct in accordance to the existence of fermi-level effect in P-type semiconductor?(Marks : 02)

A. A1 & A3
B. A2 & A4
C. A1 & A4
D. A2 & A3
Answer» B. A2 & A4
Discussion
5.

Consider the below mentioned statements.A1. Reduction in channel width & cross-sectional areaA2. Reduction in current density of channelWhich among them are the possible consequences in JFET upon the application of drain-to-source voltage (V)? (Marks : 02)

A. Only A1 is true
B. Both A1 & A2 are true but A2 is not a reason for A1
C. Both A1 & A2 are true but A2 is a reason for A1
D. Both A1 & A2 are false
Answer» B. Both A1 & A2 are true but A2 is not a reason for A1
Discussion
6.

Consider the assertions S1,S2,S3 & S4 S1 : SiOacts as an isolation layer between the junctions in IC fabrication processS2 : SiOacts as an isolation equipment/ materialbetween thedifferent devicesS3: SiOacts as a passivation layer by preventing undesired impurities over the silicon surface.S4 : SiOactsas a di-electric between poly-silicon gate and the channel of semiconductorWhich among them is/ are precise functions of silicon dioxide in an ion implantationprocess?(Marks : 01)

A. S1: Correct, S2: Correct, S3:Correct , S4: Correct
B. S1: Correct, S2: Incorrect, S3: Correct , S4 : Correct
C. S1: Correct, S2: Correct, S3 :Incorrect , S4 : Correct
D. S1: Correct, S2: Correct, S3 : Correct, S4 : Incorrect
Answer» B. S1: Correct, S2: Incorrect, S3: Correct , S4 : Correct
Discussion