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Avalanche breakdown is the dominant mechanism at h..
1.
Avalanche breakdown is the dominant mechanism at high doping densities.
A.
True
B.
False
Answer» C.
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In the beginning of the electrochemical etching, some of these pits present on the surface of the silicon wafer develop into mesopores.
The electric field strength decreases around the depressions present on the silicon wafer surface.
Avalanche breakdown is the dominant mechanism at high doping densities.
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