Assertion (A) : The drain induced barrier lowering and channel length modulation are some of the short channel effects in MOSFETReason (R): The cut-off frequency of a MOSFET is independent of gate to source and gate to drain capacitance.

Both (A) and (R) are true and (R) is the correct explanation of (A).

Both (A) and (R) are true, but (R) is not the correct explanation of (A)

Assertion (A) : The drain induced barrier lowering and channel length

1.	Assertion (A) : The drain induced barrier lowering and channel length modulation are some of the short channel effects in MOSFETReason (R): The cut-off frequency of a MOSFET is independent of gate to source and gate to drain capacitance.
A.	Both (A) and (R) are true and (R) is the correct explanation of (A).
B.	Both (A) and (R) are true, but (R) is not the correct explanation of (A)
C.	(A) is true, but (R) is false
D.	(A) false, but (R) is true
Answer» D. (A) false, but (R) is true

Discussion

No Comment Found

Related MCQs

For n-channel depletion MOSFET, the highest trans-conductance gain for a small signal is at
For a given n-MOS capacitor with substrate doping of NA=1017 cm−3, oxide thickness 20 nm, εox= 3.9 εo the values of oxide capacitance and flat band capacitance are respectively given as(use εo = 8.85×10−14 F cm−1):
Match List-I with List-II:List-I(Analog Devices)List-II(I / P impedances)a)BJTi)> 1012 Ωb)MOSFETii)> 1010 Ωc)JFETiii)> 108 Ωd)MESFETiv)< 104 ΩChoose the correct option from those given below:
An NMOS has Id = 5 mA, Vgs = 2 V, Vds = 4 V and Vt = 0.8 V. If the thickness of oxide is 500 A° , the aspect ratio of device at room temperature is
Barrier height in a metal-semiconductor contact can easily be estimated from
Consider the following statements for a metal oxide semiconductor field-effect transistor(MOSFET):P: As channel length reduces, OFF-state current increases.Q: As channel length reduces, output resistance increases.R: As channel length reduces, threshold voltage remains constant.S: As channel length reduces, ON current increases.Which of the above statements is INCORRECT?
Both transistor T1 and T2 in figure have a threshold voltage of 1V. The device parameter K1 and K2 of T1 and T2 are 36 μAN2 and 9 μA/V2 respectively. The o/p voltage V0 is
For the n-channel MOS transistor shown in the figure, the threshold voltage VTh is 0.8 V. Neglect channel length modulation effects. When the drain voltage VD = 1.6 V, the drain current ID was found to be 0.5 mA. If VD is adjusted to be 2 V by changing the values of r and VDD, the new value of ID (in mA) is
Given, Vgs is the gate-source voltage, Vds is the drain source voltage, and Vth is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are
Power dissipation is negligibly small in:

Assertion (A) : The drain induced barrier lowering and channel length modulation are some of the short channel effects in MOSFETReason (R): The cut-off frequency of a MOSFET is independent of gate to source and gate to drain capacitance.

Discussion

No Comment Found

Related MCQs

Reply to Comment