Acceptor impurity concentration of Si at 300 K is 1019 cm-3. Calculate – McqOptions

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1.	Acceptor impurity concentration of Si at 300 K is 1019 cm-3. Calculate the concentration of donor impurity atoms that must be added so that Si is n-type and the Fermi Energy is 26 meV below the conduction band edge.(Given : Effective density state Nc = 2.7 × 1019 cm-3 and Thermal Voltage (VT) at 300 K is 26 mV)
A.	1.5 × 1019 cm-3
B.	3 × 1019 cm-3
C.	1019 cm-3
D.	2 × 1019 cm-3
Answer» E.

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