A single crystal intrinsic semiconductor is at a temperature of 300 K – McqOptions

MCQOPTIONS

1.	A single crystal intrinsic semiconductor is at a temperature of 300 K with an effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from the mid-bandgap energy level by
A.	18.02 meV.
B.	9.01 meV.
C.	13.45 meV.
D.	26.90 meV.
Answer» C. 13.45 meV.

Discussion

No Comment Found

Related MCQs

For P-type semiconductor, the dopant is
N-type semiconductor is obtained by doping silicon with:
N-type materials are the type of materials formed by adding group _____ elements to the semiconductor crystals.
In terms of energy bands, insulators have:
In a p-type silicon sample, the hole concentration is (1.5 × 1015)/cm3. If the intrinsic carrier concentration is 3.0 × 1010/cm3, the electron concentration would be ______
For elements having energy gap more than 5 ev, act as:
Acceptor impurity concentration of Si at 300 K is 1019 cm-3. Calculate the concentration of donor impurity atoms that must be added so that Si is n-type and the Fermi Energy is 26 meV below the conduction band edge.(Given : Effective density state Nc = 2.7 × 1019 cm-3 and Thermal Voltage (VT) at 300 K is 26 mV)
Current in an Intrinsic semiconductor is equal to
N(E): Density of statesf(E): Probability that a quantum state with energy E is occupied by an electronEc : Energy level of the conduction bandThe expression \(\mathop \smallint \limits_{{E_c}}^\infty N\left( E \right)f\left( E \right)dE\) gives
Arrange the following semiconductor materials on the basis of Energy - Bandgap (Eg) from highest to lowestA) ZnSeB) InAsC) CdTeD) GeE) InPChoose the correct answer from the options given below: