A silicon bar is doped with donor impurities ND = 2.25 × 1015 atoms / cm3. Given the intrinsic carrier concentration of silicon at T = 300 K is ni = 1.5 × 1010 cm-3. Assuming complete impurity ionization, the equilibrium electron and hole concentrations are

• A. n0 = 1.5 × 1016 cm-3, p0 = 1.5 × 105 cm-3
• B. n0 = 1.5 × 1010 cm-3, p0 = 1.5 × 1015 cm-3
• C. n0 = 2.25 × 1015 cm-3, p0 = 1.5 × 1010 cm-3
• D. n0 = 2.25 × 1015 cm-3, p0 = 1 × 105 cm-3