1.

A Si sample is doped with 1017 Arsenic atoms/cm3. Displacement of EF relative to Ei is ______

A. Positive, 0.589 eV
B. Negative, 0.589 eV
C. Positive, 0.407 eV
D. Negative, 0.407 eV
Answer» D. Negative, 0.407 eV


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