MCQOPTIONS
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MCQOPTIONS
This section includes 15 Mcqs, each offering curated multiple-choice questions to sharpen your Microwave Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Gain of a parametric amplifier in terms of the frequencies involved in their operation is: |
| A. | (fP – fS)/fS |
| B. | fS/ (fP – fS) |
| C. | fP/fS |
| D. | None of the mentioned |
| Answer» B. fS/ (fP – fS) | |
| 2. |
Parametric amplifiers find their application in long range RADAR and satellite ground stations. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 3. |
Parametric amplifier is a ________ amplifier. |
| A. | Low noise |
| B. | High gain |
| C. | Low gain |
| D. | High noise |
| Answer» B. High gain | |
| 4. |
___________ is an amplifier constructed using a device whose reactance is varied to produce amplification. |
| A. | Travelling wave tube |
| B. | Parametric amplifier |
| C. | Common emitter |
| D. | Klystron amplifier |
| Answer» C. Common emitter | |
| 5. |
PARAMETRIC_AMPLIFIER_IS_A__________AMPLIFIER.?$ |
| A. | Low noise |
| B. | High gain |
| C. | Low gain |
| D. | High noise |
| Answer» B. High gain | |
| 6. |
Gain of a parametric amplifier in terms of the frequencies involved in their operation is:$ |
| A. | (f<sub>P</sub> – f<sub>S</sub>)/f<sub>S</sub> |
| B. | f<sub>S</sub>/ (f<sub>P</sub> – f<sub>S</sub>) |
| C. | f<sub>P</sub>/f<sub>S</sub> |
| D. | None of the mentioned |
| Answer» B. f<sub>S</sub>/ (f<sub>P</sub> ‚Äö√Ñ√∂‚àö√ë‚àö¬® f<sub>S</sub>) | |
| 7. |
Parametric_amplifiers_find_their_application_in_long_range_RADAR_and_satellite_ground_stations.$ |
| A. | True |
| B. | False |
| Answer» B. False | |
| 8. |
___________ is an amplifier constructed using a device whose reactance is varied to produce amplification? |
| A. | Travelling wave tube |
| B. | Parametric amplifier |
| C. | Common emitter |
| D. | Klystron amplifier |
| Answer» C. Common emitter | |
| 9. |
The cutoff frequency for operation of a varactor diode at a specific bias is given by: |
| A. | 1/2πR<sub>S</sub>C<sub>jv</sub> |
| B. | 1/2πC<sub>S</sub>R<sub>jv</sub> |
| C. | 1/2π√LC |
| D. | None of the mentioned |
| Answer» B. 1/2‚âà√¨‚àö√ëC<sub>S</sub>R<sub>jv</sub> | |
| 10. |
Varactor diodes are operated in _________ region to achieve maximum efficiency possible. |
| A. | Cutoff region |
| B. | Saturation region |
| C. | Reverse saturation region |
| D. | Active region |
| Answer» D. Active region | |
| 11. |
Varactors made of ______ have higher frequency range of operation compared to silicon fabricated varactor diodes. |
| A. | Germanium |
| B. | GaAs |
| C. | GaN |
| D. | None of the mentioned |
| Answer» C. GaN | |
| 12. |
Diffused junction mesa silicon diodes are widely used at microwave frequencies. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 13. |
The width of depletion region of a varactor diode ________with increase in reverse bias voltage. |
| A. | Increases |
| B. | Decreases |
| C. | Remains constant |
| D. | None of the mentioned |
| Answer» B. Decreases | |
| 14. |
Any semiconductor diode has a junction capacitance varying with reverse bias. If such a diode has microwave characteristics, it is called: |
| A. | IMPATT diode |
| B. | TRAPITT diode |
| C. | SKOTTKY diode |
| D. | None of the mentioned |
| Answer» E. | |
| 15. |
Varactor diode is a semiconductor diode in which the _________ can be varied as a function of reverse voltage of the diode. |
| A. | Junction resistance |
| B. | Junction capacitance |
| C. | Junction impedance |
| D. | None of the mentioned |
| Answer» C. Junction impedance | |