Explore topic-wise MCQs in Electronic Devices Circuits.

This section includes 3 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices Circuits knowledge and support exam preparation. Choose a topic below to get started.

1.

The range of tunnel diode voltage VD, for which slope of its V-I characteristics is negative would be? (The VP is the peak voltage and VV is the valley voltage).a) VD > 0b) 0D < VPc) VV > VD > VPd) VD > VVAnswer: cExplanation: In tunnel diode characteristics, the slope is negative in the region between VV and VP. Here, it offers negative resistance. The characteristics are depicted below:3. Tunnel diode has a very fast operation in__________a) gamma frequency regionb) ultraviolet frequency regionc) microwave frequency regiond) radio frequency regionAnswer: cExplanation: Tunnel diode is a type of semiconductor which works on tunneling effect of electrons in microwave region. So, tunnel diode has a very fast operation in microwave region.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("e5da93a0-b61a-4789-96be-a57ebec165b0"); });/**/advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("7cee830d-5f11-4a2b-b356-93cc453475a0"); });/**/4. Which of the following are true about a tunnel diode?1) it uses negative conductance property2) it operates at high frequency3) fermilevel of p side becomes higher than the n side in forward biasa) 1 onlyb) 1 and 2c) 3 onlyd) 2 and 3Answer: bExplanation: The negative resistance property helps in the operation of tunnel diode. As the tunnel diode works at high frequency, its applications are mostly in that range. High frequency oscillators are based on the resonant tunneling diode.5. The depletion layer of tunnel diode is very small beacause______a) its abrupt and has high dopantsb) uses positive conductance propertyc) its used for high frequency rangesd) tunneling effectAnswer: aExplanation: When the P and N regions are very highly doped, the depletion layer comes closer. The tunnel diode is also highly doped. Its doping concentration varies within a small scale. So it’s an abrupt diode. For these reasons, the depletion region is small.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("fdd9bf87-4faf-4493-82b4-e5538b31931a"); });/**/6. With interments of reverse bias, the tunnel current also increases because________a) electrons move from balance band of pside to conduction band of nsideb) fermi level of pside becomes higher than that of nsidec) junction currrent decreasesd) unequality of n and p bandedgeAnswer: aExplanation: When the forward bias is increased, the tunnel current is also increased upto a certain limit. This happens when the electron movement takes place from P to N side.7. The tunnneling involves_______a) acceleration of electrons in p sideb) movement of electrons from n side conduction band to p side valance bandc) charge distribution managementin both the bandsd) positive slope characteristics of diodeAnswer: bExplanation: Tunneling means a direct flow of electrons across small depletion region from N side conduction band to P side valance band. The electrons begin to accelerate in the N side of the semiconductor.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("21eae76a-c83f-42b0-aec5-01d590a53f37"); });/**/8. Tunnel diodes are made up of________a) Germanium and silicon materialsb) AlGaAsc) AlGaInPd) ZnTeAnswer: aExplanation: Germanium and silicon materials have low band gaps and flexibility. That matches tunnel diode requirements. The remaining materials emits the energy in terms of light or heat.9. For a tunnel diode, when ‘p’ is probability that carrier crosses the barrier, ’e’ is energy,’w’ is width.a) p ∝ e(-A*e*w)b) p ∝ 1/ e(-A*e*w)c) p ∝ e(A*e*w)d) p ∝ 1/e(A*e*w)Answer: aExplanation: The carrier jump occurs without any loss of energy due to small depletion layer. The probability of the carrier to jump across a barrier depends on the energy and width of the band. This variess exponentially for a given carrier.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("90f55663-effd-4105-b1e7-29d86b526544"); });/**/10. In the construction of tunnnel diode,why is the pellet soldered to anode contact and a tindot to cathode contact via a mesh screen?a) for better conduction and reduce inductance respectivelyb) for heat dissipation and increase conduction respectivelyc) for heat dissipation and reduce induction respectivelyd) for better conduction and reduce inductance respectively Answer: cExplanation: Anode goes through better heat dissipation. So the pellet is used for the purpose. The tindot via mesh screen resists inductive effects caused at the cathode. Conduction is an independent factor which can’t be controlled.11. What happens to a tunnel diode when the reverse bias effect goes beyond the valley point?

A. VD > 0b) 0D < VPc) VV > VD > VPd) VD > VVAnswer: cExplanation: In tunnel diode characteristics, the slope is negative in the region between VV and VP. Here, it offers negative resistance. The characteristics are depicted below:3. Tunnel diode has a very fast operation in__________a) gamma frequency regionb) ultraviolet frequency regionc) microwave frequency regiond) radio frequency regionAnswer: cExplanation: Tunnel diode is a type of semiconductor which works on tunneling effect of electrons in microwave region. So, tunnel diode has a very fast operation in microwave region.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("e5da93a0-b61a-4789-96be-a57ebec165b0"); });/**/advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("7cee830d-5f11-4a2b-b356-93cc453475a0"); });/**/4. Which of the following are true about a tunnel diode?1) it uses negative conductance property2) it operates at high frequency3) fermilevel of p side becomes higher than the n side in forward biasa) 1 onlyb) 1 and 2c) 3 onlyd) 2 and 3Answer: bExplanation: The negative resistance property helps in the operation of tunnel diode. As the tunnel diode works at high frequency, its applications are mostly in that range. High frequency oscillators are based on the resonant tunneling diode.5. The depletion layer of tunnel diode is very small beacause______a) its abrupt and has high dopantsb) uses positive conductance propertyc) its used for high frequency rangesd) tunneling effectAnswer: aExplanation: When the P and N regions are very highly doped, the depletion layer comes closer. The tunnel diode is also highly doped. Its doping concentration varies within a small scale. So it’s an abrupt diode. For these reasons, the depletion region is small.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("fdd9bf87-4faf-4493-82b4-e5538b31931a"); });/**/6. With interments of reverse bias, the tunnel current also increases because________a) electrons move from balance band of pside to conduction band of nsideb) fermi level of pside becomes higher than that of nsidec) junction currrent decreasesd) unequality of n and p bandedgeAnswer: aExplanation: When the forward bias is increased, the tunnel current is also increased upto a certain limit. This happens when the electron movement takes place from P to N side.7. The tunnneling involves_______a) acceleration of electrons in p sideb) movement of electrons from n side conduction band to p side valance bandc) charge distribution managementin both the bandsd) positive slope characteristics of diodeAnswer: bExplanation: Tunneling means a direct flow of electrons across small depletion region from N side conduction band to P side valance band. The electrons begin to accelerate in the N side of the semiconductor.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("21eae76a-c83f-42b0-aec5-01d590a53f37"); });/**/8. Tunnel diodes are made up of________a) Germanium and silicon materialsb) AlGaAsc) AlGaInPd) ZnTeAnswer: aExplanation: Germanium and silicon materials have low band gaps and flexibility. That matches tunnel diode requirements. The remaining materials emits the energy in terms of light or heat.9. For a tunnel diode, when ‘p’ is probability that carrier crosses the barrier, ’e’ is energy,’w’ is width.a) p ∝ e(-A*e*w)b) p ∝ 1/ e(-A*e*w)c) p ∝ e(A*e*w)d) p ∝ 1/e(A*e*w)Answer: aExplanation: The carrier jump occurs without any loss of energy due to small depletion layer. The probability of the carrier to jump across a barrier depends on the energy and width of the band. This variess exponentially for a given carrier.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("90f55663-effd-4105-b1e7-29d86b526544"); });/**/10. In the construction of tunnnel diode,why is the pellet soldered to anode contact and a tindot to cathode contact via a mesh screen?a) for better conduction and reduce inductance respectivelyb) for heat dissipation and increase conduction respectivelyc) for heat dissipation and reduce induction respectivelyd) for better conduction and reduce inductance respectively Answer: cExplanation: Anode goes through better heat dissipation. So the pellet is used for the purpose. The tindot via mesh screen resists inductive effects caused at the cathode. Conduction is an independent factor which can’t be controlled.11. What happens to a tunnel diode when the reverse bias effect goes beyond the valley point?a) it behaves as a normal diode
B. 0D < VPc) VV > VD > VPd) VD > VVAnswer: cExplanation: In tunnel diode characteristics, the slope is negative in the region between VV and VP. Here, it offers negative resistance. The characteristics are depicted below:3. Tunnel diode has a very fast operation in__________a) gamma frequency regionb) ultraviolet frequency regionc) microwave frequency regiond) radio frequency regionAnswer: cExplanation: Tunnel diode is a type of semiconductor which works on tunneling effect of electrons in microwave region. So, tunnel diode has a very fast operation in microwave region.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("e5da93a0-b61a-4789-96be-a57ebec165b0"); });/**/advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("7cee830d-5f11-4a2b-b356-93cc453475a0"); });/**/4. Which of the following are true about a tunnel diode?1) it uses negative conductance property2) it operates at high frequency3) fermilevel of p side becomes higher than the n side in forward biasa) 1 onlyb) 1 and 2c) 3 onlyd) 2 and 3Answer: bExplanation: The negative resistance property helps in the operation of tunnel diode. As the tunnel diode works at high frequency, its applications are mostly in that range. High frequency oscillators are based on the resonant tunneling diode.5. The depletion layer of tunnel diode is very small beacause______a) its abrupt and has high dopantsb) uses positive conductance propertyc) its used for high frequency rangesd) tunneling effectAnswer: aExplanation: When the P and N regions are very highly doped, the depletion layer comes closer. The tunnel diode is also highly doped. Its doping concentration varies within a small scale. So it’s an abrupt diode. For these reasons, the depletion region is small.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("fdd9bf87-4faf-4493-82b4-e5538b31931a"); });/**/6. With interments of reverse bias, the tunnel current also increases because________a) electrons move from balance band of pside to conduction band of nsideb) fermi level of pside becomes higher than that of nsidec) junction currrent decreasesd) unequality of n and p bandedgeAnswer: aExplanation: When the forward bias is increased, the tunnel current is also increased upto a certain limit. This happens when the electron movement takes place from P to N side.7. The tunnneling involves_______a) acceleration of electrons in p sideb) movement of electrons from n side conduction band to p side valance bandc) charge distribution managementin both the bandsd) positive slope characteristics of diodeAnswer: bExplanation: Tunneling means a direct flow of electrons across small depletion region from N side conduction band to P side valance band. The electrons begin to accelerate in the N side of the semiconductor.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("21eae76a-c83f-42b0-aec5-01d590a53f37"); });/**/8. Tunnel diodes are made up of________a) Germanium and silicon materialsb) AlGaAsc) AlGaInPd) ZnTeAnswer: aExplanation: Germanium and silicon materials have low band gaps and flexibility. That matches tunnel diode requirements. The remaining materials emits the energy in terms of light or heat.9. For a tunnel diode, when ‘p’ is probability that carrier crosses the barrier, ’e’ is energy,’w’ is width.a) p ∝ e(-A*e*w)b) p ∝ 1/ e(-A*e*w)c) p ∝ e(A*e*w)d) p ∝ 1/e(A*e*w)Answer: aExplanation: The carrier jump occurs without any loss of energy due to small depletion layer. The probability of the carrier to jump across a barrier depends on the energy and width of the band. This variess exponentially for a given carrier.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("90f55663-effd-4105-b1e7-29d86b526544"); });/**/10. In the construction of tunnnel diode,why is the pellet soldered to anode contact and a tindot to cathode contact via a mesh screen?a) for better conduction and reduce inductance respectivelyb) for heat dissipation and increase conduction respectivelyc) for heat dissipation and reduce induction respectivelyd) for better conduction and reduce inductance respectively Answer: cExplanation: Anode goes through better heat dissipation. So the pellet is used for the purpose. The tindot via mesh screen resists inductive effects caused at the cathode. Conduction is an independent factor which can’t be controlled.11. What happens to a tunnel diode when the reverse bias effect goes beyond the valley point?a) it behaves as a normal diodeb) it attains increased negative slope effects
C. VV > VD > VPd) VD > VVAnswer: cExplanation: In tunnel diode characteristics, the slope is negative in the region between VV and VP. Here, it offers negative resistance. The characteristics are depicted below:3. Tunnel diode has a very fast operation in__________a) gamma frequency regionb) ultraviolet frequency regionc) microwave frequency regiond) radio frequency regionAnswer: cExplanation: Tunnel diode is a type of semiconductor which works on tunneling effect of electrons in microwave region. So, tunnel diode has a very fast operation in microwave region.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("e5da93a0-b61a-4789-96be-a57ebec165b0"); });/**/advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("7cee830d-5f11-4a2b-b356-93cc453475a0"); });/**/4. Which of the following are true about a tunnel diode?1) it uses negative conductance property2) it operates at high frequency3) fermilevel of p side becomes higher than the n side in forward biasa) 1 onlyb) 1 and 2c) 3 onlyd) 2 and 3Answer: bExplanation: The negative resistance property helps in the operation of tunnel diode. As the tunnel diode works at high frequency, its applications are mostly in that range. High frequency oscillators are based on the resonant tunneling diode.5. The depletion layer of tunnel diode is very small beacause______a) its abrupt and has high dopantsb) uses positive conductance propertyc) its used for high frequency rangesd) tunneling effectAnswer: aExplanation: When the P and N regions are very highly doped, the depletion layer comes closer. The tunnel diode is also highly doped. Its doping concentration varies within a small scale. So it’s an abrupt diode. For these reasons, the depletion region is small.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("fdd9bf87-4faf-4493-82b4-e5538b31931a"); });/**/6. With interments of reverse bias, the tunnel current also increases because________a) electrons move from balance band of pside to conduction band of nsideb) fermi level of pside becomes higher than that of nsidec) junction currrent decreasesd) unequality of n and p bandedgeAnswer: aExplanation: When the forward bias is increased, the tunnel current is also increased upto a certain limit. This happens when the electron movement takes place from P to N side.7. The tunnneling involves_______a) acceleration of electrons in p sideb) movement of electrons from n side conduction band to p side valance bandc) charge distribution managementin both the bandsd) positive slope characteristics of diodeAnswer: bExplanation: Tunneling means a direct flow of electrons across small depletion region from N side conduction band to P side valance band. The electrons begin to accelerate in the N side of the semiconductor.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("21eae76a-c83f-42b0-aec5-01d590a53f37"); });/**/8. Tunnel diodes are made up of________a) Germanium and silicon materialsb) AlGaAsc) AlGaInPd) ZnTeAnswer: aExplanation: Germanium and silicon materials have low band gaps and flexibility. That matches tunnel diode requirements. The remaining materials emits the energy in terms of light or heat.9. For a tunnel diode, when ‘p’ is probability that carrier crosses the barrier, ’e’ is energy,’w’ is width.a) p ∝ e(-A*e*w)b) p ∝ 1/ e(-A*e*w)c) p ∝ e(A*e*w)d) p ∝ 1/e(A*e*w)Answer: aExplanation: The carrier jump occurs without any loss of energy due to small depletion layer. The probability of the carrier to jump across a barrier depends on the energy and width of the band. This variess exponentially for a given carrier.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("90f55663-effd-4105-b1e7-29d86b526544"); });/**/10. In the construction of tunnnel diode,why is the pellet soldered to anode contact and a tindot to cathode contact via a mesh screen?a) for better conduction and reduce inductance respectivelyb) for heat dissipation and increase conduction respectivelyc) for heat dissipation and reduce induction respectivelyd) for better conduction and reduce inductance respectively Answer: cExplanation: Anode goes through better heat dissipation. So the pellet is used for the purpose. The tindot via mesh screen resists inductive effects caused at the cathode. Conduction is an independent factor which can’t be controlled.11. What happens to a tunnel diode when the reverse bias effect goes beyond the valley point?a) it behaves as a normal diodeb) it attains increased negative slope effectsc) reverse saturation current increases
D. VD > VVAnswer: cExplanation: In tunnel diode characteristics, the slope is negative in the region between VV and VP. Here, it offers negative resistance. The characteristics are depicted below:3. Tunnel diode has a very fast operation in__________a) gamma frequency regionb) ultraviolet frequency regionc) microwave frequency regiond) radio frequency regionAnswer: cExplanation: Tunnel diode is a type of semiconductor which works on tunneling effect of electrons in microwave region. So, tunnel diode has a very fast operation in microwave region.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("e5da93a0-b61a-4789-96be-a57ebec165b0"); });/**/advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("7cee830d-5f11-4a2b-b356-93cc453475a0"); });/**/4. Which of the following are true about a tunnel diode?1) it uses negative conductance property2) it operates at high frequency3) fermilevel of p side becomes higher than the n side in forward biasa) 1 onlyb) 1 and 2c) 3 onlyd) 2 and 3Answer: bExplanation: The negative resistance property helps in the operation of tunnel diode. As the tunnel diode works at high frequency, its applications are mostly in that range. High frequency oscillators are based on the resonant tunneling diode.5. The depletion layer of tunnel diode is very small beacause______a) its abrupt and has high dopantsb) uses positive conductance propertyc) its used for high frequency rangesd) tunneling effectAnswer: aExplanation: When the P and N regions are very highly doped, the depletion layer comes closer. The tunnel diode is also highly doped. Its doping concentration varies within a small scale. So it’s an abrupt diode. For these reasons, the depletion region is small.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("fdd9bf87-4faf-4493-82b4-e5538b31931a"); });/**/6. With interments of reverse bias, the tunnel current also increases because________a) electrons move from balance band of pside to conduction band of nsideb) fermi level of pside becomes higher than that of nsidec) junction currrent decreasesd) unequality of n and p bandedgeAnswer: aExplanation: When the forward bias is increased, the tunnel current is also increased upto a certain limit. This happens when the electron movement takes place from P to N side.7. The tunnneling involves_______a) acceleration of electrons in p sideb) movement of electrons from n side conduction band to p side valance bandc) charge distribution managementin both the bandsd) positive slope characteristics of diodeAnswer: bExplanation: Tunneling means a direct flow of electrons across small depletion region from N side conduction band to P side valance band. The electrons begin to accelerate in the N side of the semiconductor.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("21eae76a-c83f-42b0-aec5-01d590a53f37"); });/**/8. Tunnel diodes are made up of________a) Germanium and silicon materialsb) AlGaAsc) AlGaInPd) ZnTeAnswer: aExplanation: Germanium and silicon materials have low band gaps and flexibility. That matches tunnel diode requirements. The remaining materials emits the energy in terms of light or heat.9. For a tunnel diode, when ‘p’ is probability that carrier crosses the barrier, ’e’ is energy,’w’ is width.a) p ∝ e(-A*e*w)b) p ∝ 1/ e(-A*e*w)c) p ∝ e(A*e*w)d) p ∝ 1/e(A*e*w)Answer: aExplanation: The carrier jump occurs without any loss of energy due to small depletion layer. The probability of the carrier to jump across a barrier depends on the energy and width of the band. This variess exponentially for a given carrier.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("90f55663-effd-4105-b1e7-29d86b526544"); });/**/10. In the construction of tunnnel diode,why is the pellet soldered to anode contact and a tindot to cathode contact via a mesh screen?a) for better conduction and reduce inductance respectivelyb) for heat dissipation and increase conduction respectivelyc) for heat dissipation and reduce induction respectivelyd) for better conduction and reduce inductance respectively Answer: cExplanation: Anode goes through better heat dissipation. So the pellet is used for the purpose. The tindot via mesh screen resists inductive effects caused at the cathode. Conduction is an independent factor which can’t be controlled.11. What happens to a tunnel diode when the reverse bias effect goes beyond the valley point?a) it behaves as a normal diodeb) it attains increased negative slope effectsc) reverse saturation current increasesd) beacomes independent of temperatureAnswer: aExplanation: After the valley point is crossed, the tunnel diode obtains positive slope resistance. That is similar to the characteristics of a normal diode. So it behaves like a normal diode after beyond valley point. Sanfoundry Global Education & Learning Series – Electronic Devices and Circuits.To practice all areas of Electronic Devices and Circuits, here is complete set of 1000+ Multiple Choice Questions and Answers.Participate in the Sanfoundry Certification contest to get free Certificate of Merit. Join our social networks below and stay updated with latest contests, videos, internships and jobs!Telegram | Youtube | LinkedIn | Instagram | Facebook | Twitter | PinterestYoutube | LinkedIn | Instagram | Facebook | Twitter | Pinterest« Prev - Electronic Devices and Circuits Questions and Answers – Breakdown Diodes» Next - Electronic Devices and Circuits Questions and Answers – p-i-n Diode and its Characteristics
E. .a) VD > 0b) 0D < VPc) VV > VD > VPd) VD > VVAnswer: cExplanation: In tunnel diode characteristics, the slope is negative in the region between VV and VP. Here, it offers negative resistance. The characteristics are depicted below:3. Tunnel diode has a very fast operation in__________a) gamma frequency regionb) ultraviolet frequency regionc) microwave frequency regiond) radio frequency regionAnswer: cExplanation: Tunnel diode is a type of semiconductor which works on tunneling effect of electrons in microwave region. So, tunnel diode has a very fast operation in microwave region.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("e5da93a0-b61a-4789-96be-a57ebec165b0"); });/**/advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("7cee830d-5f11-4a2b-b356-93cc453475a0"); });/**/4. Which of the following are true about a tunnel diode?1) it uses negative conductance property2) it operates at high frequency3) fermilevel of p side becomes higher than the n side in forward biasa) 1 onlyb) 1 and 2c) 3 onlyd) 2 and 3Answer: bExplanation: The negative resistance property helps in the operation of tunnel diode. As the tunnel diode works at high frequency, its applications are mostly in that range. High frequency oscillators are based on the resonant tunneling diode.5. The depletion layer of tunnel diode is very small beacause______a) its abrupt and has high dopantsb) uses positive conductance propertyc) its used for high frequency rangesd) tunneling effectAnswer: aExplanation: When the P and N regions are very highly doped, the depletion layer comes closer. The tunnel diode is also highly doped. Its doping concentration varies within a small scale. So it’s an abrupt diode. For these reasons, the depletion region is small.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("fdd9bf87-4faf-4493-82b4-e5538b31931a"); });/**/6. With interments of reverse bias, the tunnel current also increases because________a) electrons move from balance band of pside to conduction band of nsideb) fermi level of pside becomes higher than that of nsidec) junction currrent decreasesd) unequality of n and p bandedgeAnswer: aExplanation: When the forward bias is increased, the tunnel current is also increased upto a certain limit. This happens when the electron movement takes place from P to N side.7. The tunnneling involves_______a) acceleration of electrons in p sideb) movement of electrons from n side conduction band to p side valance bandc) charge distribution managementin both the bandsd) positive slope characteristics of diodeAnswer: bExplanation: Tunneling means a direct flow of electrons across small depletion region from N side conduction band to P side valance band. The electrons begin to accelerate in the N side of the semiconductor.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("21eae76a-c83f-42b0-aec5-01d590a53f37"); });/**/8. Tunnel diodes are made up of________a) Germanium and silicon materialsb) AlGaAsc) AlGaInPd) ZnTeAnswer: aExplanation: Germanium and silicon materials have low band gaps and flexibility. That matches tunnel diode requirements. The remaining materials emits the energy in terms of light or heat.9. For a tunnel diode, when ‘p’ is probability that carrier crosses the barrier, ’e’ is energy,’w’ is width.a) p ∝ e(-A*e*w)b) p ∝ 1/ e(-A*e*w)c) p ∝ e(A*e*w)d) p ∝ 1/e(A*e*w)Answer: aExplanation: The carrier jump occurs without any loss of energy due to small depletion layer. The probability of the carrier to jump across a barrier depends on the energy and width of the band. This variess exponentially for a given carrier.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("90f55663-effd-4105-b1e7-29d86b526544"); });/**/10. In the construction of tunnnel diode,why is the pellet soldered to anode contact and a tindot to cathode contact via a mesh screen?a) for better conduction and reduce inductance respectivelyb) for heat dissipation and increase conduction respectivelyc) for heat dissipation and reduce induction respectivelyd) for better conduction and reduce inductance respectively Answer: cExplanation: Anode goes through better heat dissipation. So the pellet is used for the purpose. The tindot via mesh screen resists inductive effects caused at the cathode. Conduction is an independent factor which can’t be controlled.11. What happens to a tunnel diode when the reverse bias effect goes beyond the valley point?a) it behaves as a normal diodeb) it attains increased negative slope effectsc) reverse saturation current increasesd) beacomes independent of temperatureAnswer: aExplanation: After the valley point is crossed, the tunnel diode obtains positive slope resistance. That is similar to the characteristics of a normal diode. So it behaves like a normal diode after beyond valley point. Sanfoundry Global Education & Learning Series – Electronic Devices and Circuits.To practice all areas of Electronic Devices and Circuits, here is complete set of 1000+ Multiple Choice Questions and Answers.Participate in the Sanfoundry Certification contest to get free Certificate of Merit. Join our social networks below and stay updated with latest contests, videos, internships and jobs!Telegram | Youtube | LinkedIn | Instagram | Facebook | Twitter | PinterestYoutube | LinkedIn | Instagram | Facebook | Twitter | Pinterest« Prev - Electronic Devices and Circuits Questions and Answers – Breakdown Diodes» Next - Electronic Devices and Circuits Questions and Answers – p-i-n Diode and its Characteristics
Answer» D. VD > VVAnswer: cExplanation: In tunnel diode characteristics, the slope is negative in the region between VV and VP. Here, it offers negative resistance. The characteristics are depicted below:3. Tunnel diode has a very fast operation in__________a) gamma frequency regionb) ultraviolet frequency regionc) microwave frequency regiond) radio frequency regionAnswer: cExplanation: Tunnel diode is a type of semiconductor which works on tunneling effect of electrons in microwave region. So, tunnel diode has a very fast operation in microwave region.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("e5da93a0-b61a-4789-96be-a57ebec165b0"); });/**/advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("7cee830d-5f11-4a2b-b356-93cc453475a0"); });/**/4. Which of the following are true about a tunnel diode?1) it uses negative conductance property2) it operates at high frequency3) fermilevel of p side becomes higher than the n side in forward biasa) 1 onlyb) 1 and 2c) 3 onlyd) 2 and 3Answer: bExplanation: The negative resistance property helps in the operation of tunnel diode. As the tunnel diode works at high frequency, its applications are mostly in that range. High frequency oscillators are based on the resonant tunneling diode.5. The depletion layer of tunnel diode is very small beacause______a) its abrupt and has high dopantsb) uses positive conductance propertyc) its used for high frequency rangesd) tunneling effectAnswer: aExplanation: When the P and N regions are very highly doped, the depletion layer comes closer. The tunnel diode is also highly doped. Its doping concentration varies within a small scale. So it’s an abrupt diode. For these reasons, the depletion region is small.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("fdd9bf87-4faf-4493-82b4-e5538b31931a"); });/**/6. With interments of reverse bias, the tunnel current also increases because________a) electrons move from balance band of pside to conduction band of nsideb) fermi level of pside becomes higher than that of nsidec) junction currrent decreasesd) unequality of n and p bandedgeAnswer: aExplanation: When the forward bias is increased, the tunnel current is also increased upto a certain limit. This happens when the electron movement takes place from P to N side.7. The tunnneling involves_______a) acceleration of electrons in p sideb) movement of electrons from n side conduction band to p side valance bandc) charge distribution managementin both the bandsd) positive slope characteristics of diodeAnswer: bExplanation: Tunneling means a direct flow of electrons across small depletion region from N side conduction band to P side valance band. The electrons begin to accelerate in the N side of the semiconductor.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("21eae76a-c83f-42b0-aec5-01d590a53f37"); });/**/8. Tunnel diodes are made up of________a) Germanium and silicon materialsb) AlGaAsc) AlGaInPd) ZnTeAnswer: aExplanation: Germanium and silicon materials have low band gaps and flexibility. That matches tunnel diode requirements. The remaining materials emits the energy in terms of light or heat.9. For a tunnel diode, when ‘p’ is probability that carrier crosses the barrier, ’e’ is energy,’w’ is width.a) p ∝ e(-A*e*w)b) p ∝ 1/ e(-A*e*w)c) p ∝ e(A*e*w)d) p ∝ 1/e(A*e*w)Answer: aExplanation: The carrier jump occurs without any loss of energy due to small depletion layer. The probability of the carrier to jump across a barrier depends on the energy and width of the band. This variess exponentially for a given carrier.advertisement/**/ var adpushup = adpushup || {}; adpushup.que = adpushup.que || []; adpushup.que.push(function() { adpushup.triggerAd("90f55663-effd-4105-b1e7-29d86b526544"); });/**/10. In the construction of tunnnel diode,why is the pellet soldered to anode contact and a tindot to cathode contact via a mesh screen?a) for better conduction and reduce inductance respectivelyb) for heat dissipation and increase conduction respectivelyc) for heat dissipation and reduce induction respectivelyd) for better conduction and reduce inductance respectively Answer: cExplanation: Anode goes through better heat dissipation. So the pellet is used for the purpose. The tindot via mesh screen resists inductive effects caused at the cathode. Conduction is an independent factor which can’t be controlled.11. What happens to a tunnel diode when the reverse bias effect goes beyond the valley point?a) it behaves as a normal diodeb) it attains increased negative slope effectsc) reverse saturation current increasesd) beacomes independent of temperatureAnswer: aExplanation: After the valley point is crossed, the tunnel diode obtains positive slope resistance. That is similar to the characteristics of a normal diode. So it behaves like a normal diode after beyond valley point. Sanfoundry Global Education & Learning Series – Electronic Devices and Circuits.To practice all areas of Electronic Devices and Circuits, here is complete set of 1000+ Multiple Choice Questions and Answers.Participate in the Sanfoundry Certification contest to get free Certificate of Merit. Join our social networks below and stay updated with latest contests, videos, internships and jobs!Telegram | Youtube | LinkedIn | Instagram | Facebook | Twitter | PinterestYoutube | LinkedIn | Instagram | Facebook | Twitter | Pinterest« Prev - Electronic Devices and Circuits Questions and Answers – Breakdown Diodes» Next - Electronic Devices and Circuits Questions and Answers – p-i-n Diode and its Characteristics
Discussion
2.

If ‘X’ corresponds to a tunnel diode and ‘Y’ to an avalanche diode, then__________

A. X operates in reverse bias and Y operates in forward bias
B. X operates in reverse bias and Y operates in reverse bias
C. X operates in forward bias and Y operates in forward bias
D. X operates in forward bias and Y operates in reverse bias
Answer» E.
Discussion
3.

If ‘X’ corresponds to a tunnel diode and ‘Y’ to an avalanche diode, then__________

A. X operates in reverse bias and Y operates in forward bias
B. X operates in reverse bias and Y operates in reverse bias
C. X operates in forward bias and Y operates in forward bias
D. X operates in forward bias and Y operates in reverse bias
Answer» E.
Discussion