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This section includes 42 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering Questions knowledge and support exam preparation. Choose a topic below to get started.
1. |
The voltage gain of a transistor connected in common collector arrangement is____________? |
A. | equal to 1 |
B. | more than 10 |
C. | more than 100 |
D. | less than 1 |
Answer» E. | |
2. |
The voltage gain in a transistor connected in___________arrangement is the highest? |
A. | common base |
B. | common collector |
C. | common emitter |
D. | none of the above |
Answer» D. none of the above | |
3. |
The value of a of a transistor is_____________? |
A. | more than 1 |
B. | less than 1 |
C. | 1 |
D. | none of the above |
Answer» C. 1 | |
4. |
The value of ß for a transistor is generally____________? |
A. | 1 |
B. | less than 1 |
C. | between 20 and 500 |
D. | above 500 |
Answer» D. above 500 | |
5. |
The relation between ß and a is______________? |
A. | ß = 1 / (1 – a ) |
B. | ß = (1 – a ) / a |
C. | ß = a / (1 – a ) |
D. | ß = a / (1 + a ) |
Answer» D. ß = a / (1 + a ) | |
6. |
The power gain in a transistor connected in___________arrangement is the highest? |
A. | common emitter |
B. | common base |
C. | common collector |
D. | none of the above |
Answer» B. common base | |
7. |
The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is___________? |
A. | 0o |
B. | 180o |
C. | 90o |
D. | 270o |
Answer» C. 90o | |
8. |
The phase difference between the input and output voltages of a transistor connected in common collector arrangement is_____________? |
A. | 180° |
B. | 0° |
C. | 90° |
D. | 270° |
Answer» C. 90° | |
9. |
The phase difference between the input and output voltages in a common base arrangement is___________? |
A. | 180o |
B. | 90o |
C. | 270o |
D. | 0o |
Answer» E. | |
10. |
The output impedance of a transistor connected in_____________arrangement is the highest? |
A. | common emitter |
B. | common collector |
C. | common base |
D. | none of the above |
Answer» D. none of the above | |
11. |
The output impedance of a transistor is____________? |
A. | high |
B. | zero |
C. | low |
D. | very low |
Answer» B. zero | |
12. |
The most commonly used transistor arrangement is____________arrangement? |
A. | common emitter |
B. | common base |
C. | common collector |
D. | none of the above |
Answer» B. common base | |
13. |
The most commonly used semiconductor in the manufacture of a transistor is_____________? |
A. | germanium |
B. | silicon |
C. | carbon |
D. | none of the above |
Answer» C. carbon | |
14. |
The leakage current in CE arrangement is____________that in CB arrangement? |
A. | more than |
B. | less than |
C. | the same as |
D. | none of the above |
Answer» B. less than | |
15. |
The input impedance of a transistor is___________? |
A. | high |
B. | low |
C. | very high |
D. | almost zero |
Answer» C. very high | |
16. |
The input impedance of a transistor connected in___________arrangement is the highest? |
A. | common emitter |
B. | common collector |
C. | common base |
D. | none of the above |
Answer» C. common base | |
17. |
The emitter of a transistor is___________doped? |
A. | lightly |
B. | heavily |
C. | moderately |
D. | none of the above |
Answer» C. moderately | |
18. |
The element that has the biggest size in a transistor is____________? |
A. | collector |
B. | base |
C. | emitter |
D. | collector-base-junction |
Answer» B. base | |
19. |
The collector-base junction in a transistor has___________? |
A. | forward bias at all times |
B. | reverse bias at all times |
C. | low resistance |
D. | none of the above |
Answer» C. low resistance | |
20. |
The collector of a transistor is____________doped? |
A. | heavily |
B. | moderately |
C. | lightly |
D. | none of the above |
Answer» C. lightly | |
21. |
The base of a transistor is____________doped? |
A. | heavily |
B. | moderately |
C. | lightly |
D. | none of the above |
Answer» D. none of the above | |
22. |
The arrow in the symbol of a transistor indicates the direction of____________? |
A. | electron current in the emitter |
B. | electron current in the collector |
C. | hole current in the emitter |
D. | donor ion current |
Answer» D. donor ion current | |
23. |
Most of the majority carriers from the emitter____________? |
A. | recombine in the base |
B. | recombine in the emitter |
C. | pass through the base region to the collector |
D. | none of the above |
Answer» D. none of the above | |
24. |
In a transistor ______________? |
A. | IC = IE + IB |
B. | IB = IC + IE |
C. | IE = IC – IB |
D. | IE = IC + IB |
Answer» E. | |
25. |
In a transistor, the base current is about_________of emitter current? |
A. | 25% |
B. | 20% |
C. | 35 % |
D. | 5% |
Answer» E. | |
26. |
In a transistor, signal is transferred from a___________circuit? |
A. | high resistance to low resistance |
B. | low resistance to high resistance |
C. | high resistance to high resistance |
D. | low resistance to low resistance |
Answer» C. high resistance to high resistance | |
27. |
In a transistor if ß = 100 and collector current is 10 mA, then IE is___________? |
A. | 100 mA |
B. | 100.1 mA |
C. | 110 mA |
D. | none of the above |
Answer» C. 110 mA | |
28. |
In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of ß is____________? |
A. | 100 |
B. | 50 |
C. | about 1 |
D. | 200 |
Answer» E. | |
29. |
In a pnp transistor, the current carriers are______________? |
A. | acceptor ions |
B. | donor ions |
C. | free electrons |
D. | holes |
Answer» E. | |
30. |
In a npn transistor,_____________are the minority carriers? |
A. | free electrons |
B. | holes |
C. | donor ions |
D. | acceptor ions |
Answer» C. donor ions | |
31. |
If the value of a is 0.9, then value of ß is___________? |
A. | 9 |
B. | 0.9 |
C. | 900 |
D. | 90 |
Answer» E. | |
32. |
IC = aIE +____________? |
A. | IB |
B. | ICEO |
C. | ICBO |
D. | ßIB |
Answer» D. ßIB | |
33. |
IC = [a / (1 – a )] IB + [___________ / (1 – a )? |
A. | ICBO |
B. | ICEO |
C. | IC |
D. | IE |
Answer» B. ICEO | |
34. |
IC = [a / (1 – a )] IB +_____________? |
A. | ICEO |
B. | ICBO |
C. | IC |
D. | (1 – a ) IB |
Answer» B. ICBO | |
35. |
IC = ß IB +__________? |
A. | ICBO |
B. | IC |
C. | ICEO |
D. | aIE |
Answer» D. aIE | |
36. |
BC 147 transistor indicates that it is made of____________? |
A. | germanium |
B. | silicon |
C. | carbon |
D. | none of the above |
Answer» C. carbon | |
37. |
At the base-emitter junctions of a transistor, one finds___________? |
A. | a reverse bias |
B. | a wide depletion layer |
C. | low resistance |
D. | none of the above |
Answer» D. none of the above | |
38. |
As the temperature of a transistor goes up, the base-emitter resistance___________? |
A. | decreases |
B. | increases |
C. | remains the same |
D. | none of the above |
Answer» B. increases | |
39. |
A transistor is connected in CB mode. If it is not connected in CE mode with same bias voltages, the values of IE, IB and IC will____________? |
A. | remain the same |
B. | increase |
C. | decrease |
D. | none of the above |
Answer» B. increase | |
40. |
A transistor is a___________operated device? |
A. | current |
B. | voltage |
C. | both voltage and current |
D. | none of the above |
Answer» B. voltage | |
41. |
A transistor has____________? |
A. | one pn junction |
B. | two pn junctions |
C. | three pn junctions |
D. | four pn junctions |
Answer» C. three pn junctions | |
42. |
A heat sink is generally used with a transistor to______________? |
A. | increase the forward current |
B. | decrease the forward current |
C. | compensate for excessive doping |
D. | prevent excessive temperature rise |
Answer» E. | |