MCQOPTIONS
Saved Bookmarks
MCQOPTIONS
This section includes 13 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The grown junction type transistors is generally used for_________ |
| A. | PNP transistors |
| B. | NPN transistors |
| C. | Both transistors |
| D. | Depends on the material used |
| Answer» C. Both transistors | |
| 2. |
The electrical properties of a transistor in alloy type construction is determined by_________ |
| A. | space between the junctions in the wafer |
| B. | proportions of N and P type impurities |
| C. | the pulling rate of crystal |
| D. | uniformity of the crystal lattice |
| Answer» B. proportions of N and P type impurities | |
| 3. |
The larger dot of the indium is used as_________ |
| A. | base |
| B. | emitter |
| C. | control pin |
| D. | collector |
| Answer» E. | |
| 4. |
THE_ELECTRICAL_PROPERTIES_OF_A_TRANSISTOR_IN_ALLOY_TYPE_CONSTRUCTION_IS_DETERMINED_BY_________?$ |
| A. | space between the junctions in the wafer |
| B. | proportions of N and P type impurities |
| C. | the pulling rate of crystal |
| D. | uniformity of the crystal lattice |
| Answer» B. proportions of N and P type impurities | |
| 5. |
The_grown_junction_type_transistors_is_generally_used_for_________$ |
| A. | PNP transistors |
| B. | NPN transistors |
| C. | Both transistors |
| D. | Depends on the material used |
| Answer» C. Both transistors | |
| 6. |
The larger dot of the indium is used as________? |
| A. | base |
| B. | emitter |
| C. | control pin |
| D. | collector |
| Answer» E. | |
| 7. |
What is the thickness of wafer in the alloy type transistors? |
| A. | 1-2m inch |
| B. | 3-5m inch |
| C. | 5-6m inch |
| D. | 4-7m inch |
| Answer» C. 5-6m inch | |
| 8. |
The non rectifying base contact is made from_________ |
| A. | welding a strip |
| B. | germanium |
| C. | indium |
| D. | graphite |
| Answer» B. germanium | |
| 9. |
What is the melting point of indium in alloy type transistors? |
| A. | 300°C |
| B. | 200°C |
| C. | 155°C |
| D. | 100°C |
| Answer» D. 100¬¨¬®‚Äö√†√ªC | |
| 10. |
Which of the following is true about grown junction type construction? |
| A. | N type impurity is added to P type impurity |
| B. | Boron helps in the prevention of oxidation |
| C. | The seed is pulled to a large distance for a correct growth |
| D. | Slow pulling leads to the formation of P type crystal |
| Answer» E. | |
| 11. |
Which of the following methods take impurity variation method for transistor construction? |
| A. | alloy type diffusion |
| B. | grown junction type |
| C. | epitaxial type |
| D. | mesa type |
| Answer» C. epitaxial type | |
| 12. |
In a grown junction type construction, the method used form a junction transistor is_________ |
| A. | alloy type diffusion |
| B. | mesa type |
| C. | speed variation method |
| D. | fused junction type |
| Answer» D. fused junction type | |
| 13. |
Which gas is used to fill the chamber in the grown junction type transistor construction? |
| A. | helium |
| B. | boron |
| C. | nitrogen |
| D. | oxygen |
| Answer» D. oxygen | |