Explore topic-wise MCQs in Electrical Engineering Questions.

This section includes 40 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering Questions knowledge and support exam preparation. Choose a topic below to get started.

1.

The stability factor of a collector feedback bias circuit is_______________ that of base resistor bias?

A. The same as
B. More than
C. Less than
D. None of the above
Answer» D. None of the above
2.

The disadvantage of base resistor method of transistor biasing is that it_________________?

A. 10 IB
B. 3 IB
C. 2 IB
D. 4 IB
Answer» B. 3 IB
3.

If the temperature increases, the value of VCE_________________?

A. Remains the same
B. Is increased
C. Is decreased
D. None of the above
Answer» D. None of the above
4.

The purpose of resistance in the emitter circuit of a transistor amplifier is to _________________?

A. Limit the maximum emitter current
B. Provide base-emitter bias
C. Limit the change in emitter current
D. None of the above
Answer» D. None of the above
5.

In a base resistor method, if the value of ß changes by 50, then collector current will change by a factor ___________________?

A. 25
B. 50
C. 100
D. 200
Answer» C. 100
6.

If the value of collector current IC increases, then the value of VCE ______________?

A. Remains the same
B. Decreases
C. Increases
D. None of the above
Answer» C. Increases
7.

In the above question (Q38.) , what is the collector voltage ?

A. 3 V
B. 8 V
C. 6 V
D. 7 V
Answer» B. 8 V
8.

The base resistor method is generally used in ________________?

A. Amplifier circuits
B. Switching circuits
C. Rectifier circuits
D. None of the above
Answer» C. Rectifier circuits
9.

When the temperature changes, the operating point is shifted due to _______________?

A. Change in ICBO
B. Change in VCC
C. Change in the values of circuit resistance
D. None of the above
Answer» B. Change in VCC
10.

A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB ?

A. 105 kO
B. 530 kO
C. 315 kO
D. None of the above
Answer» C. 315 kO
11.

The value of VBE ___________________?

A. Depends upon IC to moderate extent
B. Is almost independent of IC
C. Is strongly dependant on IC
D. None of the above
Answer» C. Is strongly dependant on IC
12.

In a particular biasing circuit, the value of RE is about _________________?

A. 10 kO
B. 1 MO
C. 100 kO
D. 800 O
Answer» E.
13.

The zero signal IC is generally ______________ mA in the initial stages of a transistor amplifier?

A. 4
B. 1
C. 3
D. More than 10
Answer» C. 3
14.

Transistor biasing is done to keep _____________in the circuit?

A. Proper direct current
B. Proper alternating current
C. The base current small
D. Collector current small
Answer» B. Proper alternating current
15.

Transistor biasing is generally provided by a_______________?

A. Biasing circuit
B. Bias battery
C. Diode
D. None of the above
Answer» B. Bias battery
16.

For faithful amplification by a transistor circuit, the value of VBE should_____________for a silicon transistor?

A. Be zero
B. Be 0.01 V
C. Not fall below 0.7 V
D. Be between 0 V and 0.1 V
Answer» D. Be between 0 V and 0.1 V
17.

In voltage divider bias, VCC = 25 V; R1 = 10 kO; R2 = 2.2 V ; RC = 3.6 V and RE =1 kO. What is the emitter voltage?

A. 7 V
B. 3 V
C. V
D. 8 V
Answer» E.
18.

In a transistor amplifier circuit VCE = VCB +________________?

A. VBE
B. 2VBE
C. 5 VBE
D. None of the above
Answer» B. 2VBE
19.

Thermal runaway occurs when_________________?

A. Collector is reverse biased
B. Transistor is not biased
C. Emitter is forward biased
D. Junction capacitance is high
Answer» C. Emitter is forward biased
20.

For germanium transistor amplifier, VCE should_______________for faithful amplification?

A. Be zero
B. Be 0.2 V
C. Not fall below 0.7 V
D. None of the above
Answer» D. None of the above
21.

In the design of a biasing circuit, the value of collector load RC is determined by__________________?

A. VCE consideration
B. VBE consideration
C. IB consideration
D. None of the above
Answer» B. VBE consideration
22.

The value of stability factor for a base resistor bias is________________?

A. RB (ß+1)
B. (ß+1)RC
C. (ß+1)
D. 1-ß
Answer» D. 1-ß
23.

In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kO, what is the value of RE ?

A. 2000 O
B. 1400 O
C. 800 O
D. 1600 O
Answer» D. 1600 O
24.

The disadvantage of voltage divider bias is that it has _________________?

A. High stability factor
B. Low base current
C. Many resistors
D. None of the above
Answer» D. None of the above
25.

For proper amplification by a transistor circuit, the operating point should be located at the_____________ of the d.c. load line?

A. The end point
B. Middle
C. The maximum current point
D. None of the above
Answer» C. The maximum current point
26.

For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?

A. Not fall below 1 V
B. Be zero
C. Be 0.2 V
D. None of the above
Answer» B. Be zero
27.

For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than_____________?

A. 10 IB
B. 3 IB
C. 2 IB
D. 4 IB
Answer» B. 3 IB
28.

The operating point is also called the _______________?

A. Cut off point
B. Quiescent point
C. Saturation point
D. None of the above
Answer» C. Saturation point
29.

An ideal value of stability factor is________________?

A. 100
B. 200
C. More than 200
D. 1
Answer» C. More than 200
30.

The operating point ________________ on the a.c. load line?

A. Also line
B. Does not lie
C. May or may not lie
D. Data insufficient
Answer» B. Does not lie
31.

For proper operation of the transistor, its collector should have___________________?

A. Proper forward bias
B. Proper reverse bias
C. Very small size
D. None of the above
Answer» C. Very small size
32.

The circuit that provides the best stabilization of operating point is___________________?

A. Base resistor bias
B. Collector feedback bias
C. Potential divider bias
D. None of the above
Answer» D. None of the above
33.

Transistor biasing represents ______________ conditions?

A. a.c
B. d.c
C. both a.c. and d.c
D. none of the above
Answer» C. both a.c. and d.c
34.

If biasing is not done in an amplifier circuit, it results in________________?

A. Decrease in the base current
B. Unfaithful amplification
C. Excessive collector bias
D. None of the above
Answer» C. Excessive collector bias
35.

If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to___________________?

A. 6 mA
B. mA
C. 3 mA
D. 1 mA
Answer» D. 1 mA
36.

The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by___________________?

A. 100 µA
B. 25 µA
C. 20 µA
D. 50 µA
Answer» E.
37.

The point of intersection of d.c. and a.c. load lines represents __________________?

A. Operating point
B. Current gain
C. Voltage gain
D. None of the above
Answer» B. Current gain
38.

The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?

A. One hundredth
B. One tenth
C. One thousandth
D. One millionth
Answer» D. One millionth
39.

Operating point represents__________________?

A. Values of IC and VCE when signal is applied
B. The magnitude of signal
C. Zero signal values of IC and VCE
D. None of the above
Answer» D. None of the above
40.

The stabilisation of operating point in potential divider method is provided by_______________?

A. RE consideration
B. RC consideration
C. VCC consideration
D. None of the above
Answer» B. RC consideration