MCQOPTIONS
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MCQOPTIONS
This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
For a transistor in its circuit symbol, the line between drain and source was broken, what does this indicate? |
| A. | BJT |
| B. | JFET |
| C. | Depletion type MOSFET |
| D. | Enhancement type MOSFET |
| Answer» E. | |
| 2. |
Which of the following statement is true about enhancement MOSFET? |
| A. | It acts as closed switch |
| B. | It acts as open switch |
| C. | It acts as resistor with small resistance |
| D. | Capacitor |
| Answer» C. It acts as resistor with small resistance | |
| 3. |
The depletion type MOSFET is equivalent to normally closed switch. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 4. |
The drain current of a MOSFET in saturation is given by ID=K(VGS-VP) (VGS-VP)
|
| A. | K(V<sub>GS</sub>-V<sub>T</sub>) (V<sub>GS</sub>-V<sub>T</sub>)/ V<sub>DS</sub> |
| B. | 2K(V<sub>GS</sub>-V<sub>T</sub>) |
| C. | I<sub>D</sub>/V<sub>GS</sub> V<sub>dS</sub> |
| D. | K(V<sub>GS</sub>-V<sub>T</sub>) (V<sub>GS</sub>-V<sub>T</sub>)/ V<sub>GS</sub> |
| Answer» C. I<sub>D</sub>/V<sub>GS</sub> V<sub>dS</sub> | |
| 5. |
At room temperature, what is the possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET? |
| A. | 450 cm<sup>2</sup>/v-s |
| B. | 1350 cm<sup>2</sup>/v-s |
| C. | 1800 cm<sup>2</sup>/v-s |
| D. | 3600cm<sup>2</sup>/v-s |
| Answer» C. 1800 cm<sup>2</sup>/v-s | |
| 6. |
Which of the following effects can be caused by decrease in temperature? |
| A. | Increase in MOSFET current |
| B. | Increase in BJT current |
| C. | Decrease in MOSFET current |
| D. | Decrease in BJT current |
| Answer» D. Decrease in BJT current | |
| 7. |
In a MOSFET operating in a saturation region, the channel length modulation effect causes |
| A. | An increase in gate-source capacitance |
| B. | Decrease in Trans conductance |
| C. | Decrease in the unity gain cut off |
| D. | Decrease in the output impedance |
| Answer» E. | |
| 8. |
The effective channel length of a MOSFET in saturation decreases with increase in which of the following parameter? |
| A. | Gate voltage |
| B. | Drain voltage |
| C. | Source voltage |
| D. | Body voltage |
| Answer» C. Source voltage | |
| 9. |
MOSFET can be used as ________ |
| A. | Voltage controlled capacitor |
| B. | Current controlled capacitor |
| C. | Voltage controlled inductor |
| D. | Current controlled inductor |
| Answer» B. Current controlled capacitor | |
| 10. |
The threshold voltage of an n-channel MOSFET can be controlled by which of the following parameter? |
| A. | Increasing the channel dopant concentration |
| B. | Reducing the channel dopant concentration |
| C. | Reducing the gate-oxide thickness |
| D. | Reducing the channel |
| Answer» C. Reducing the gate-oxide thickness | |