At room temperature, what is the possible value for the mobility of el – McqOptions

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1.	At room temperature, what is the possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET?
A.	450 cm<sup>2</sup>/v-s
B.	1350 cm<sup>2</sup>/v-s
C.	1800 cm<sup>2</sup>/v-s
D.	3600cm<sup>2</sup>/v-s
Answer» C. 1800 cm<sup>2</sup>/v-s

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