Explore topic-wise MCQs in Electrical Engineering Questions.

This section includes 35 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering Questions knowledge and support exam preparation. Choose a topic below to get started.

1.

The most commonly used semiconductor is________________?

A. Germanium
B. Silicon
C. Carbon
D. Sulphur
Answer» C. Carbon
2.

The barrier voltage at a pn junction for germanium is about________________?

A. 5 V
B. 3 V
C. Zero
D. 0.3 V
Answer» E.
3.

At absolute temperature, an intrinsic semiconductor has________________?

A. A few free electrons
B. Many holes
C. Many free electrons
D. No holes or free electrons
Answer» E.
4.

A reverse bias pn junction has_____________?

A. Very narrow depletion layer
B. Almost no current
C. Very low resistance
D. Large current flow
Answer» C. Very low resistance
5.

A reverse biased pn junction has resistance of the order of________________?

A. O
B. kO
C. MO
D. None of the above
Answer» D. None of the above
6.

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on_________________?

A. Junction capacitance
B. Minority carriers
C. Majority carriers
D. None of the above
Answer» C. Majority carriers
7.

At room temperature, an intrinsic silicon crystal acts approximately as_______________?

A. A battery
B. A conductor
C. An insulator
D. A piece of copper wire
Answer» D. A piece of copper wire
8.

The leakage current in a pn junction is of the order of________________?

A. Aa
B. mA
C. kA
D. µA
Answer» E.
9.

The impurity level in an extrinsic semiconductor is about_______________of pure semiconductor ?

A. 10 atoms for 108 atoms
B. 1 atom for 108 atoms
C. 1 atom for 104 atoms
D. 1 atom for 100 atoms
Answer» C. 1 atom for 104 atoms
10.

A forward biased pn junction diode has a resistance of the order of_____________?

A. O
B. kO
C. MO
D. None of the above
Answer» B. kO
11.

With forward bias to a pn junction , the width of depletion layer__________________?

A. Decreases
B. Increases
C. Remains the same
D. None of the above
Answer» B. Increases
12.

The leakage current across a pn junction is due to________________?

A. Minority carriers
B. Majority carriers
C. Junction capacitance
D. None of the above
Answer» B. Majority carriers
13.

At room temperature, an intrinsic semiconductor has_______________?

A. Many holes only
B. A few free electrons and holes
C. Many free electrons only
D. No holes or free electrons
Answer» C. Many free electrons only
14.

The random motion of holes and free electrons due to thermal agitation is called______________?

A. Diffusion
B. Pressure
C. Ionisation
D. None of the above
Answer» B. Pressure
15.

The resistivity of pure germanium under standard conditions is about_______________?

A. 6 x 104 cm
B. 60 x cm
C. 3 x 106 cm
D. 6 x 10-4 cm
Answer» C. 3 x 106 cm
16.

A hole and electron in close proximity would tend to________________?

A. Repel each other
B. Attract each other
C. Have no effect on each other
D. None of the above
Answer» C. Have no effect on each other
17.

In a semiconductor, current conduction is due to________________?

A. Only holes
B. Only free electrons
C. Holes and free electrons
D. None of the above
Answer» D. None of the above
18.

In the depletion region of a pn junction, there is a shortage of_________________?

A. Acceptor ions
B. Holes and electrons
C. Donor ions
D. None of the above
Answer» C. Donor ions
19.

The battery connections required to forward bias a pn junction are_________________?

A. +ve terminal to p and –ve terminal to n
B. -ve terminal to p and +ve terminal to n
C. -ve terminal to p and –ve terminal to n
D. None of the above
Answer» B. -ve terminal to p and +ve terminal to n
20.

A pn junction acts as a__________________?

A. Controlled switch
B. Bidirectional switch
C. Unidirectional switch
D. None of the above
Answer» D. None of the above
21.

In an intrinsic semiconductor, the number of free electrons_____________?

A. Equals the number of holes
B. Is greater than the number of holes
C. Is less than the number of holes
D. None of the above
Answer» B. Is greater than the number of holes
22.

Addition of trivalent impurity to a semiconductor creates many_______________?

A. Holes
B. Free electrons
C. Valence electrons
D. Bound electrons
Answer» B. Free electrons
23.

When a pure semiconductor is heated, its resistance_________________?

A. Goes up
B. Goes down
C. Remains the same
D. Can’t say
Answer» C. Remains the same
24.

Addition of pentavalent impurity to a semiconductor creates many________________?

A. Free electrons
B. Holes
C. Valence electrons
D. Bound electrons
Answer» B. Holes
25.

A pentavalent impurity has______________Valence electrons?

A. 3
B. 5
C. 4
D. 6
Answer» C. 4
26.

A semiconductor has ______________ temperature coefficient of resistance?

A. Positive
B. Zero
C. Negative
D. None of the above
Answer» D. None of the above
27.

A semiconductor has generally_______________valence electrons?

A. 2
B. 3
C. 6
D. 4
Answer» E.
28.

An n-type semiconductor is______________?

A. Positively charged
B. Negatively charged
C. Electrically neutral
D. None of the above
Answer» D. None of the above
29.

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor_______________?

A. Remains the same
B. Increases
C. Decreases
D. None of the above
Answer» D. None of the above
30.

The strength of a semiconductor crystal comes from______________?

A. Forces between nuclei
B. Forces between protons
C. Electron-pair bonds
D. None of the above
Answer» D. None of the above
31.

When a pentavalent impurity is added to a pure semiconductor, it becomes________________?

A. An insulator
B. An intrinsic semiconductor
C. p-type semiconductor
D. n-type semiconductor
Answer» E.
32.

A trivalent impurity has______________valence electrons?

A. 4
B. 5
C. 6
D. 3
Answer» E.
33.

A semiconductor is formed by ______________bonds?

A. Covalent
B. Electrovalent
C. Co-ordinate
D. None of the above
Answer» B. Electrovalent
34.

A hole in a semiconductor is defined as_________________?

A. A free electron
B. The incomplete part of an electron pair bond
C. A free proton
D. A free neutron
Answer» C. A free proton
35.

The resistivity of a pure silicon is about _______________?

A. 100 O cm
B. 6000 O cm
C. 3 x 105 O m
D. 6 x 10-8 O cm
Answer» C. 3 x 105 O m