MCQOPTIONS
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MCQOPTIONS
This section includes 35 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering Questions knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
With forward bias to a pn junction , the width of depletion layer__________________? |
| A. | Decreases |
| B. | Increases |
| C. | Remains the same |
| D. | None of the above |
| Answer» B. Increases | |
| 2. |
When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on_________________? |
| A. | Junction capacitance |
| B. | Minority carriers |
| C. | Majority carriers |
| D. | None of the above |
| Answer» C. Majority carriers | |
| 3. |
When a pure semiconductor is heated, its resistance_________________? |
| A. | Goes up |
| B. | Goes down |
| C. | Remains the same |
| D. | Can’t say |
| Answer» C. Remains the same | |
| 4. |
When a pentavalent impurity is added to a pure semiconductor, it becomes________________? |
| A. | An insulator |
| B. | An intrinsic semiconductor |
| C. | p-type semiconductor |
| D. | n-type semiconductor |
| Answer» E. | |
| 5. |
The strength of a semiconductor crystal comes from______________? |
| A. | Forces between nuclei |
| B. | Forces between protons |
| C. | Electron-pair bonds |
| D. | None of the above |
| Answer» D. None of the above | |
| 6. |
The resistivity of pure germanium under standard conditions is about_______________? |
| A. | 6 x 104 cm |
| B. | 60 x cm |
| C. | 3 x 106 cm |
| D. | 6 x 10-4 cm |
| Answer» C. 3 x 106 cm | |
| 7. |
The resistivity of a pure silicon is about _______________? |
| A. | 100 O cm |
| B. | 6000 O cm |
| C. | 3 x 105 O m |
| D. | 6 x 10-8 O cm |
| Answer» C. 3 x 105 O m | |
| 8. |
The random motion of holes and free electrons due to thermal agitation is called______________? |
| A. | Diffusion |
| B. | Pressure |
| C. | Ionisation |
| D. | None of the above |
| Answer» B. Pressure | |
| 9. |
The most commonly used semiconductor is________________? |
| A. | Germanium |
| B. | Silicon |
| C. | Carbon |
| D. | Sulphur |
| Answer» C. Carbon | |
| 10. |
The leakage current in a pn junction is of the order of________________? |
| A. | Aa |
| B. | mA |
| C. | kA |
| D. | µA |
| Answer» E. | |
| 11. |
The leakage current across a pn junction is due to________________? |
| A. | Minority carriers |
| B. | Majority carriers |
| C. | Junction capacitance |
| D. | None of the above |
| Answer» B. Majority carriers | |
| 12. |
The impurity level in an extrinsic semiconductor is about_______________of pure semiconductor ? |
| A. | 10 atoms for 108 atoms |
| B. | 1 atom for 108 atoms |
| C. | 1 atom for 104 atoms |
| D. | 1 atom for 100 atoms |
| Answer» C. 1 atom for 104 atoms | |
| 13. |
The battery connections required to forward bias a pn junction are_________________? |
| A. | +ve terminal to p and –ve terminal to n |
| B. | -ve terminal to p and +ve terminal to n |
| C. | -ve terminal to p and –ve terminal to n |
| D. | None of the above |
| Answer» B. -ve terminal to p and +ve terminal to n | |
| 14. |
The barrier voltage at a pn junction for germanium is about________________? |
| A. | 5 V |
| B. | 3 V |
| C. | Zero |
| D. | 0.3 V |
| Answer» E. | |
| 15. |
In the depletion region of a pn junction, there is a shortage of_________________? |
| A. | Acceptor ions |
| B. | Holes and electrons |
| C. | Donor ions |
| D. | None of the above |
| Answer» C. Donor ions | |
| 16. |
In an intrinsic semiconductor, the number of free electrons_____________? |
| A. | Equals the number of holes |
| B. | Is greater than the number of holes |
| C. | Is less than the number of holes |
| D. | None of the above |
| Answer» B. Is greater than the number of holes | |
| 17. |
In a semiconductor, current conduction is due to________________? |
| A. | Only holes |
| B. | Only free electrons |
| C. | Holes and free electrons |
| D. | None of the above |
| Answer» D. None of the above | |
| 18. |
At room temperature, an intrinsic silicon crystal acts approximately as_______________? |
| A. | A battery |
| B. | A conductor |
| C. | An insulator |
| D. | A piece of copper wire |
| Answer» D. A piece of copper wire | |
| 19. |
At room temperature, an intrinsic semiconductor has_______________? |
| A. | Many holes only |
| B. | A few free electrons and holes |
| C. | Many free electrons only |
| D. | No holes or free electrons |
| Answer» C. Many free electrons only | |
| 20. |
At absolute temperature, an intrinsic semiconductor has________________? |
| A. | A few free electrons |
| B. | Many holes |
| C. | Many free electrons |
| D. | No holes or free electrons |
| Answer» E. | |
| 21. |
As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor_______________? |
| A. | Remains the same |
| B. | Increases |
| C. | Decreases |
| D. | None of the above |
| Answer» D. None of the above | |
| 22. |
An n-type semiconductor is______________? |
| A. | Positively charged |
| B. | Negatively charged |
| C. | Electrically neutral |
| D. | None of the above |
| Answer» D. None of the above | |
| 23. |
Addition of trivalent impurity to a semiconductor creates many_______________? |
| A. | Holes |
| B. | Free electrons |
| C. | Valence electrons |
| D. | Bound electrons |
| Answer» B. Free electrons | |
| 24. |
Addition of pentavalent impurity to a semiconductor creates many________________? |
| A. | Free electrons |
| B. | Holes |
| C. | Valence electrons |
| D. | Bound electrons |
| Answer» B. Holes | |
| 25. |
A trivalent impurity has______________valence electrons? |
| A. | 4 |
| B. | 5 |
| C. | 6 |
| D. | 3 |
| Answer» E. | |
| 26. |
A semiconductor is formed by ______________bonds? |
| A. | Covalent |
| B. | Electrovalent |
| C. | Co-ordinate |
| D. | None of the above |
| Answer» B. Electrovalent | |
| 27. |
A semiconductor has generally_______________valence electrons? |
| A. | 2 |
| B. | 3 |
| C. | 6 |
| D. | 4 |
| Answer» E. | |
| 28. |
A semiconductor has ______________ temperature coefficient of resistance? |
| A. | Positive |
| B. | Zero |
| C. | Negative |
| D. | None of the above |
| Answer» D. None of the above | |
| 29. |
A reverse biased pn junction has resistance of the order of________________? |
| A. | O |
| B. | kO |
| C. | MO |
| D. | None of the above |
| Answer» D. None of the above | |
| 30. |
A reverse bias pn junction has_____________? |
| A. | Very narrow depletion layer |
| B. | Almost no current |
| C. | Very low resistance |
| D. | Large current flow |
| Answer» C. Very low resistance | |
| 31. |
A pn junction acts as a__________________? |
| A. | Controlled switch |
| B. | Bidirectional switch |
| C. | Unidirectional switch |
| D. | None of the above |
| Answer» D. None of the above | |
| 32. |
A pentavalent impurity has______________Valence electrons? |
| A. | 3 |
| B. | 5 |
| C. | 4 |
| D. | 6 |
| Answer» C. 4 | |
| 33. |
A hole in a semiconductor is defined as_________________? |
| A. | A free electron |
| B. | The incomplete part of an electron pair bond |
| C. | A free proton |
| D. | A free neutron |
| Answer» C. A free proton | |
| 34. |
A hole and electron in close proximity would tend to________________? |
| A. | Repel each other |
| B. | Attract each other |
| C. | Have no effect on each other |
| D. | None of the above |
| Answer» C. Have no effect on each other | |
| 35. |
A forward biased pn junction diode has a resistance of the order of_____________? |
| A. | O |
| B. | kO |
| C. | MO |
| D. | None of the above |
| Answer» B. kO | |