MCQOPTIONS
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MCQOPTIONS
This section includes 155 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 151. |
The thermal-equilibrium concentration of hole p0 in silicon at T = 300 K is 1015 cm3. The value of n0 is |
| A. | 3.8 x 10<sup>8</sup> cm<sup>3</sup> |
| B. | 4.4 x 10<sup>4</sup> cm<sup>3</sup> |
| C. | 2.6 x 10<sup>4</sup> cm<sup>3</sup> |
| D. | 4.3 x 10<sup>8</sup> cm<sup>3</sup> |
| Answer» C. 2.6 x 10<sup>4</sup> cm<sup>3</sup> | |
| 152. |
In silicon at T = 300 K if the Fermi energy is 0.22 eV above the valence band energy, the value of p0 is |
| A. | 2 x 10<sup>15</sup> cm<sup>3</sup> |
| B. | 10<sup>15</sup> cm<sup>3</sup> |
| C. | 3 x 10<sup>15</sup> cm<sup>3</sup> |
| D. | 4 x 10<sup>15</sup> cm<sup>3</sup> |
| Answer» B. 10<sup>15</sup> cm<sup>3</sup> | |
| 153. |
In silicon at T = 300 K the thermal-equilibrium concentration of electron is n0 = 5 x 10^4 cc. The hole concentration is |
| A. | 4.5 x 10<sup>15</sup> cc |
| B. | 4.5 x 10<sup>15</sup> m<sup>3</sup> |
| C. | 0.3 x 10<sup>-6</sup> cc |
| D. | 0.3 x 10<sup>-6</sup> m<sup>3</sup> |
| Answer» B. 4.5 x 10<sup>15</sup> m<sup>3</sup> | |
| 154. |
Two semiconductor material have exactly the same properties except that material A has a bandgap of 1.0 |
| A. | |
| B. | |
| Answer» C. | |
| 155. |
The intrinsic carrier concentration in silicon is to be no greater than ni = 1 x 10^12 cc. The maximum temperature allowed for the silicon is ( Eg = 1.12 eV) |
| A. | 300 K |
| B. | 360 K |
| C. | 382 K |
| D. | 364 K |
| Answer» D. 364 K | |