MCQOPTIONS
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MCQOPTIONS
This section includes 15 Mcqs, each offering curated multiple-choice questions to sharpen your Digital Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
HOW_MUCH_LOCATIONS_AN_8-BIT_ADDRESS_CODE_CAN_SELECT_IN_MEMORY??$ |
| A. | 8 locations |
| B. | 256 locations |
| C. | 65,536 locations |
| D. | 131,072 locations |
| Answer» C. 65,536 locations | |
| 2. |
Fusing process is$ |
| A. | Reversible |
| B. | Irreversible |
| C. | Synchronous |
| D. | Asynchronous |
| Answer» C. Synchronous | |
| 3. |
What is a fusing process?$ |
| A. | It is a process by which data is passed to the memory |
| B. | It is a process by which data is read through the memory |
| C. | It is a process by which programs are burnout to the diode/transistors |
| D. | None of the Mentioned |
| Answer» D. None of the Mentioned | |
| 4. |
Metal links are made up of |
| A. | Polycrystalline |
| B. | Magnesium sulphide |
| C. | Nichrome |
| D. | Silicon dioxide |
| Answer» D. Silicon dioxide | |
| 5. |
How many types of fuse technologies are used in PROMs? |
| A. | 2 |
| B. | 3 |
| C. | 4 |
| D. | 5 |
| Answer» C. 4 | |
| 6. |
The cell type used inside a PROM is |
| A. | Link cells |
| B. | Metal cells |
| C. | Fuse cells |
| D. | Electric cells |
| Answer» D. Electric cells | |
| 7. |
Which part of a Flash memory architecture manages all chip functions? |
| A. | Program verify code |
| B. | Floating-gate MOSFET |
| C. | Command code |
| D. | Input/Output pins |
| Answer» C. Command code | |
| 8. |
How can ultraviolet erasable PROMs be recognized? |
| A. | There is a small window on the chip |
| B. | They will have a small violet dot next to the 1 pin |
| C. | Their part number always starts with a “U”, such as in U12 |
| D. | They are not readily identifiable, since they must always be kept under a small cover |
| Answer» B. They will have a small violet dot next to the 1 pin | |
| 9. |
Which of the following best describes the fusible-link PROM? |
| A. | Manufacturer-programmable, reprogrammable |
| B. | Manufacturer-programmable, one-time programmable |
| C. | User-programmable, reprogrammable |
| D. | User-programmable, one-time programmable |
| Answer» E. | |
| 10. |
How many 8 k √ó 1 RAMs are required to achieve a memory with a word capacity of 8 k and a word length of eight bits?$ |
| A. | Eight |
| B. | Two |
| C. | One |
| D. | Four |
| Answer» B. Two | |
| 11. |
The bit capacity of a memory that has 2048 addresses and can store 8 bits at each address is |
| A. | 4096 |
| B. | 16384 |
| C. | 32768 |
| D. | 8129 |
| Answer» C. 32768 | |
| 12. |
PROMs are available in |
| A. | Bipolar and MOSFET technologies |
| B. | MOSFET and FET technologies |
| C. | FET and bipolar technologies |
| D. | MOS and bipolar technologies |
| Answer» E. | |
| 13. |
Which of the following is programmed electrically by the user? |
| A. | ROM |
| B. | EPROM |
| C. | PROM |
| D. | EEPROM |
| Answer» D. EEPROM | |
| 14. |
Why did PROM introduced? |
| A. | To increase the storage capacity |
| B. | To increase the address locations |
| C. | To provide flexibility |
| D. | To reduce the size |
| Answer» D. To reduce the size | |
| 15. |
The time from the beginning of a read cycle to the end of tACS/tAA is called as |
| A. | Write enable time |
| B. | Data hold |
| C. | Read cycle time |
| D. | Access time |
| Answer» E. | |