MCQOPTIONS
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MCQOPTIONS
This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
A_POWER_BJT_IS_USED_AS_A_POWER_CONTROL_SWITCH_BY_BIASING_IT_IN_THE_CUT_OFF_REGION_(OFF_STATE)_OR_IN_THE_SATURATION_REGION_(ON_STATE)._IN_THE_ON_STATE?$ |
| A. | both the base-emitter & base-collector junctions are forward biased |
| B. | the base-emitter junction is reverse biased, and the base collector junction is forward biased |
| C. | the base-emitter junction is forward biased, and the base collector junction is reversed biased |
| D. | both the base-collector & the base-emitter junctions are reversed biased |
| Answer» B. the base-emitter junction is reverse biased, and the base collector junction is forward biased | |
| 2. |
THE_VALUE_OF_‚ÂÀ√≠‚ÄÖ√¢¬ß_IS_GIVEN_BY_THE_EXPRESSION?$# |
| A. | I<sub>C</sub>/I<sub>B</sub> |
| B. | I<sub>C</sub>/I<sub>E</sub> |
| C. | I<sub>E</sub>/I<sub>C</sub> |
| D. | I<sub>E</sub>/I<sub>B</sub> |
| Answer» B. I<sub>C</sub>/I<sub>E</sub> | |
| 3. |
The forward current gain α is given b?# |
| A. | I<sub>C</sub>/I<sub>B</sub> |
| B. | I<sub>C</sub>/I<sub>E</sub> |
| C. | I<sub>E</sub>/I<sub>C</sub> |
| D. | I<sub>E</sub>/I<sub>B</sub> |
| Answer» C. I<sub>E</sub>/I<sub>C</sub> | |
| 4. |
For a power transistor, if the base current IB is increased keeping VCE constant, then |
| A. | I<sub>C</sub> increases |
| B. | I<sub>C</sub> decreases |
| C. | I<sub>C</sub> remains constant |
| D. | none of the mentioned |
| Answer» B. I<sub>C</sub> decreases | |
| 5. |
In a power transistor, the IB vs VBE curve is |
| A. | a parabolic curve |
| B. | an exponentially decaying curve |
| C. | resembling the diode curve |
| D. | a straight line Y = I<sub>B</sub> |
| Answer» D. a straight line Y = I<sub>B</sub> | |
| 6. |
In a power transistor, _________ is the controlling parameter. |
| A. | V<sub>BE</sub> |
| B. | V<sub>CE</sub> |
| C. | I<sub>B</sub> |
| D. | I<sub>C</sub> |
| Answer» D. I<sub>C</sub> | |
| 7. |
A power transistor is a _________ device. |
| A. | two terminal, bipolar, voltage controlled |
| B. | two terminal, unipolar, current controlled |
| C. | three terminal, unipolar, voltage controlled |
| D. | three terminal, bipolar, current controlled |
| Answer» E. | |
| 8. |
In a power transistor, ____ is the controlled parameter. |
| A. | V<sub>BE</sub> |
| B. | V<sub>CE</sub> |
| C. | I<sub>B</sub> |
| D. | I<sub>C</sub> |
| Answer» E. | |
| 9. |
A power transistor is a |
| A. | three layer, three junction device |
| B. | three layer, two junction device |
| C. | two layer, one junction device |
| D. | four layer, three junction device |
| Answer» C. two layer, one junction device | |
| 10. |
Which of the following devices does not belong to the transistor family? |
| A. | IGBT |
| B. | MOSFET |
| C. | GTO |
| D. | BJT |
| Answer» D. BJT | |