MCQOPTIONS
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MCQOPTIONS
This section includes 18 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Conductivity-Modulated Field Effect Transistor is also called |
| A. | Bipolar Junction Transistor |
| B. | Metal Oxide Semiconductor Field Effect Transistor |
| C. | MOS- controlled Thyristor |
| D. | Insulated gate Bipolar Transistor |
| Answer» E. | |
| 2. |
Identify the device shown in the given figure. |
| A. | Silicon unilateral switch |
| B. | Silicon controlled rectifier |
| C. | Silicon controlled switch |
| D. | Light activated SCR |
| Answer» D. Light activated SCR | |
| 3. |
A modern power semiconductor device that combines the characteristics of BJT and MOSFET is: |
| A. | IGBT |
| B. | GTO |
| C. | FCT |
| D. | MCT |
| Answer» B. GTO | |
| 4. |
Assertion (A): In power electronics, converters feel stress during the operation beyond their ratings.Reason (R): The snubber circuits are used to increase the applied voltage across the devices during turn off transients. |
| A. | Both (A) and (R) are true and (R) is the correct explanation of (A) |
| B. | Both (A) and (R) are true, but (R) is not the correct explanation of (A) |
| C. | (A) is true, but (R) is false |
| D. | (A) is false, but (R) is true |
| Answer» D. (A) is false, but (R) is true | |
| 5. |
Directions: It consists of two statements, one labeled as the ‘Statement (I)’ and the other as ‘Statement (II)’. Examine these two statements carefully and select the answer using the codes given below:Statement (I): A Gate Turn-Off is a pnpn device which can be turned on by a pulse of positive gate current and turned off by a negative pulse.Statement (II): A chopper is a static device which converts fixed dc input voltage to variable dc output voltage. |
| A. | Statement (I) and Statement (II) are individually true and statement (II) is the correct explanation of statement (II) |
| B. | Statement (I) and Statement (II) are individually true but statement (II) is not the correct explanation of statement (I) |
| C. | Statement (I) is true but statement (II) is false |
| D. | Statement (I) is false but statement (II) is true |
| Answer» C. Statement (I) is true but statement (II) is false | |
| 6. |
A triac is a: |
| A. | 2 terminal bidirectional switch |
| B. | 2 terminal unilateral switch |
| C. | 3 terminal unilateral switch |
| D. | 3 terminal bidirectional switch |
| Answer» E. | |
| 7. |
If RE = 1 kΩ and IV = 5 mA, determine the value of VBB which will cause the UJT to turn off. |
| A. | 5 V |
| B. | 2 V |
| C. | 7 V |
| D. | 6 V |
| Answer» D. 6 V | |
| 8. |
In GTO, gate circuit losses are _________ |
| A. | More |
| B. | Less |
| C. | Moderate |
| D. | Same as others |
| Answer» B. Less | |
| 9. |
Operating frequency in IGBTs is around |
| A. | 50 kHz |
| B. | 2 MHz |
| C. | 1 MHz |
| D. | 1.5 MHz |
| Answer» B. 2 MHz | |
| 10. |
Consider the following statements about IGBT1. It has high input impedance2. It has low ON state voltage drop3. Its switching speed is higher than that of the MOSFET4. It is a voltage controlled deviceWhich of the above statements are correct? |
| A. | 1, 2 and 3 only |
| B. | 2, 3 and 4 only |
| C. | 1, 2 and 4 only |
| D. | 1, 2, 3 and 4 |
| Answer» D. 1, 2, 3 and 4 | |
| 11. |
______ is not a group member of Thyristor. |
| A. | SCR |
| B. | GTO |
| C. | BJT |
| D. | TRIAC |
| Answer» D. TRIAC | |
| 12. |
Directions: The question consists of two statements, one labelled as ‘Statement (I)’ and the other labelled as ‘Statement (II)’. You are to examine these two statements carefully and select the answers to these items using the codes given below:Statement (I):The power diodes are three-layer devices.Statement (II):The impurity concentrations of power diodes vary layer to layer. |
| A. | Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I). |
| B. | Both Statement (I) and Statement (II) are individually true, but Statement (II) is not the correct explanation of Statement (I). |
| C. | Statement (I) is true, but Statement (II) is false. |
| D. | Statement (I) is false, but Statement (II) is true. |
| Answer» C. Statement (I) is true, but Statement (II) is false. | |
| 13. |
A power MOSFET is a |
| A. | Voltage controlled device |
| B. | Current controlled device |
| C. | Frequency controlled device |
| D. | None of the above |
| Answer» B. Current controlled device | |
| 14. |
Diacs are primarily used as: |
| A. | surge protection devices |
| B. | power thyristors |
| C. | triggering devices |
| D. | pulse generators |
| Answer» D. pulse generators | |
| 15. |
Consider the following devices:1. SCR2. GTO3. BJT4. MOSFET5. IGBTWhich of these devices belong to the family of thyristors? |
| A. | 1 and 2 only |
| B. | 1, 2 and 3 only |
| C. | 2, 3 and 5 only |
| D. | 1, 2, 3, 4 and 5 |
| Answer» B. 1, 2 and 3 only | |
| 16. |
Consider the following statements A and R.Assertion A): UJT is a negative resistance device.Reason R): UJT has only one p-n junction.Select your answer from the following alternatives: |
| A. | Both (A) and (R) are true and (R) is correct explanation of (A). |
| B. | Both (A) and (R) are true but (R) is NOT the correct explanation of (A). |
| C. | (A) is true but (R) is false. |
| D. | (A) is false but (R) is true. |
| Answer» C. (A) is true but (R) is false. | |
| 17. |
If you need to design a relaxation oscillator circuit. The most likely device to use might be |
| A. | a SCR |
| B. | a UJT |
| C. | a Triac |
| D. | All of these |
| Answer» C. a Triac | |
| 18. |
A light-activated thyristor can be used as: |
| A. | Amplifier |
| B. | Oscillator |
| C. | Switch |
| D. | Filter |
| Answer» D. Filter | |