Directions: It consists of two statements, one labelled as the ‘Statement (I)’ and the other as ‘Statement (II). Examine these two statements carefully and select the answer using the codes given below:Statement (I): The ‘turn-on’ and ‘turn-off’ time of a MOSFET is very small.Statement (II): The MOSFET is a majority-carrier device.

Both Statement (I) and Statement (II) are individually true but Statement (II) is not the correct explanation of Statement (I)

Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)

Both Statement (I) and Statement (II) are individually true but Statement (II) is not the correct explanation of Statement (I)

Statement (I) is true but Statement (II) is false

Statement (I) is false but Statement (II) is true

For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?

All the four are majority carrier devices.

All the four are minority carrier devices.

IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.

MOSFET is majority carrier device, whereas IGBT, Diode Thyristor are minority carrier devices.

Both majority and minority carrier device

Higher switching losses and higher conduction losses

Higher switching losses but lower conduction losses

Higher switching losses and higher conduction losses

Lower switching losses and Lower conduction losses

Lower switching losses but higher conduction losses

1.	In a power transistor _____ is controlling parameter
A.	VBE
B.	VCE
C.	IB
D.	IC
Answer» D. IC

2.	Identify the device whose symbol is given below
A.	npn transistor
B.	pnp transistor
C.	MOSFET
D.	IGBT
Answer» E.

3.	Following is the demerit of IGBT:
A.	High peak current capability
B.	Low turn off time
C.	Ease of gate drive
D.	High turn off time
Answer» E.

4.	Directions: It consists of two statements, one labelled as the ‘Statement (I)’ and the other as ‘Statement (II). Examine these two statements carefully and select the answer using the codes given below:Statement (I): The ‘turn-on’ and ‘turn-off’ time of a MOSFET is very small.Statement (II): The MOSFET is a majority-carrier device.
A.	Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)
B.	Both Statement (I) and Statement (II) are individually true but Statement (II) is not the correct explanation of Statement (I)
C.	Statement (I) is true but Statement (II) is false
D.	Statement (I) is false but Statement (II) is true
Answer» B. Both Statement (I) and Statement (II) are individually true but Statement (II) is not the correct explanation of Statement (I)

5.	For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?
A.	All the four are majority carrier devices.
B.	All the four are minority carrier devices.
C.	IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.
D.	MOSFET is majority carrier device, whereas IGBT, Diode Thyristor are minority carrier devices.
Answer» E.

6.	A MOSFET is
A.	Minority carrier device
B.	Majority carrier device
C.	Both majority and minority carrier device
D.	None of the above
Answer» C. Both majority and minority carrier device

7.	Figure shows 4 electronic switches (i), (ii), (iii) and (iv). Which of the switches can blockVoltages of either polarity(applied between terminals ‘a’ and ‘b’) when the active device is in OFF state?
A.	(i), (ii) and (iii)
B.	(ii), (iii) and (iv)
C.	(ii) and (iii)
D.	(i) and (iv)
Answer» D. (i) and (iv)

8.	As compared to power MOSFET, a BJT has
A.	Higher switching losses but lower conduction losses
B.	Higher switching losses and higher conduction losses
C.	Lower switching losses and Lower conduction losses
D.	Lower switching losses but higher conduction losses
Answer» B. Higher switching losses and higher conduction losses

9.	In an IGBT cell the collector and emitter are respectively
A.	n and p
B.	n+ and p+
C.	p and n
D.	p+ and n+
Answer» E.

10.	A power BJT has Collector current IC = 20 A at IB = 2.5 A and reverse saturation current ICS = 15 mA. Find out Current gain β?
A.	8
B.	7.95
C.	7
D.	8.95
Answer» C. 7