Explore topic-wise MCQs in Power Electronics.

This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.

1.

THE_PEAK_INVERSE_CURRENT_IP_FOR_A_POWER_DIODE_IS_GIVEN_BY_THE_EXPRESSION?$

A. I<sub>P</sub>=t + di/dt
B. I<sub>P</sub>=t * log ‚Å°i
C. I<sub>P</sub>=t * di/dt
D. I<sub>P</sub>=t * ‚à´ t*i dt
Answer» D. I<sub>P</sub>=t * ‚Äö√Ñ√∂‚àö‚Ƭ¨¬• t*i dt
Discussion
2.

A_power_diode_with_small_softness_factor_(S-factor)_has$

A. small oscillatory over voltages
B. large oscillatory over voltages
C. large peak reverse current
D. small peak reverse current
Answer» C. large peak reverse current
Discussion
3.

In case of an ideal power diode, the leakage current flows fro?

A. anode to cathode
B. cathode to anode
C. in both the directions
D. leakage current does not flow
Answer» E.
Discussion
4.

A diode is said to be forward biased when the

A. cathode is positive with respect to the anode
B. anode is positive with respect to the cathode
C. anode is negative with respect to the anode
D. both cathode & anode are positive
Answer» C. anode is negative with respect to the anode
Discussion
5.

A diode is said to be reversed biased when the

A. cathode is positive with respect to the anode
B. anode is positive with respect to the cathode
C. cathode is negative with respect to the anode
D. both cathode & anode are negative
Answer» B. anode is positive with respect to the cathode
Discussion
6.

Which of the following is true in case of a power diode with R load?

A. I grows almost linearly with V
B. I decays almost linearly with V
C. I is independent of V
D. I initial grows than decays
Answer» B. I decays almost linearly with V
Discussion
7.

The V-I Characteristics of the diode lie in the

A. 1st & 2nd quadrant
B. 1st & 3rd quadrant
C. 1st & 4th quadrant
D. Only in the 1st quadrant
Answer» C. 1st & 4th quadrant
Discussion
8.

Power diode is __________

A. a three terminal semiconductor device
B. a two terminal semiconductor device
C. a four terminal semiconductor device
D. a three terminal analog device
Answer» C. a four terminal semiconductor device
Discussion
9.

To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________

A. a lightly doped n layer is grown between the two p & n layers
B. a heavily doped n layer is grown between the two p & n layers
C. a lightly doped p layer is grown between the two p & n layers
D. a heavily doped p layer is grown between the two p & n layers
Answer» B. a heavily doped n layer is grown between the two p & n layers
Discussion
10.

An ideal power diode must have

A. low forward current carrying capacity
B. large reverse breakdown voltage
C. high ohmic junction resistance
D. high reverse recovery time
Answer» C. high ohmic junction resistance
Discussion