 
			 
			MCQOPTIONS
 Saved Bookmarks
				| 1. | To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________ | 
| A. | a lightly doped n layer is grown between the two p & n layers | 
| B. | a heavily doped n layer is grown between the two p & n layers | 
| C. | a lightly doped p layer is grown between the two p & n layers | 
| D. | a heavily doped p layer is grown between the two p & n layers | 
| Answer» B. a heavily doped n layer is grown between the two p & n layers | |