MCQOPTIONS
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MCQOPTIONS
This section includes 14 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
If anode current is 400 A, then the amount of current required to turn off the GTO is about ________ |
| A. | 20A |
| B. | 200A |
| C. | 400A |
| D. | 100A |
| Answer» E. | |
| 2. |
A thyristor can be termed as ______ |
| A. | AC switch |
| B. | DC switch |
| C. | Wave switch |
| D. | Square wave switch |
| Answer» C. Wave switch | |
| 3. |
The turn on time of an SCR with inductive load is 20 µs. The pulse train frequency is 2.5 KHz with a mark/space ratio of 1/10, and then SCR will ______ |
| A. | Turn On |
| B. | Not turn on |
| C. | Turn on if inductance is removed. |
| D. | Turn on if pulse frequency is increased to two times |
| Answer» B. Not turn on | |
| 4. |
For a power transistor, if base current IB is increased keeping Vce constant; then______ |
| A. | IC increases |
| B. | IC decreases |
| C. | IC remains constant |
| D. | IC changes sinusoidal |
| Answer» B. IC decreases | |
| 5. |
A_THYRISTOR_CAN_BE_TERMED_AS_______?$ |
| A. | AC switch |
| B. | DC switch |
| C. | Wave switch |
| D. | Square wave switch |
| Answer» C. Wave switch | |
| 6. |
If_anode_current_is_400_A,_then_the_amount_of_current_required_to_turn_off_the_GTO_is_about_________$ |
| A. | 20A |
| B. | 200A |
| C. | 400A |
| D. | 100A |
| Answer» E. | |
| 7. |
What are the three terminals of a power MOSFET called? |
| A. | Collector, emitter, Gate |
| B. | Drain, source, gate |
| C. | Collector, emitter, base |
| D. | Drain, emitter, base |
| Answer» C. Collector, emitter, base | |
| 8. |
The turn on time of an SCR with inductive load is 20 µs. The pulse train frequency is 2.5 KHz with a mark/space ratio of 1/10, and then SCR will ______$ |
| A. | Turn On |
| B. | Not turn on |
| C. | Turn on if inductance is removed. |
| D. | Turn on if pulse frequency is increased to two times |
| Answer» B. Not turn on | |
| 9. |
SITH is also known as ________ |
| A. | Field controlled diode |
| B. | Field controlled rectifier |
| C. | Silicon controlled diode |
| D. | Silicon controlled rectifier |
| Answer» B. Field controlled rectifier | |
| 10. |
A Gate Turn Off (GTO) can be turned on by applying _______ |
| A. | positive gate signal |
| B. | positive drain signal |
| C. | positive source signal |
| D. | negative source signal |
| Answer» B. positive drain signal | |
| 11. |
Insulated-gate bipolar transistor (IGBT) has combinational advantages of ______ |
| A. | BJTs and SITs |
| B. | BJTs and MOSFETs |
| C. | SITs and MOSFETs |
| D. | FETs and BJTs |
| Answer» C. SITs and MOSFETs | |
| 12. |
Which one is the most suitable power device for high frequency (>100 kHz) switching application? |
| A. | BJT |
| B. | Power MOSFET |
| C. | Schottkey diode |
| D. | Microwave transistor |
| Answer» C. Schottkey diode | |
| 13. |
For a power transistor, if base current IB is increased keeping Vce constant; then______ |
| A. | I<sub>C</sub> increases |
| B. | I<sub>C</sub> decreases |
| C. | I<sub>C</sub> remains constant |
| D. | I<sub>C</sub> changes sinusoidal |
| Answer» B. I<sub>C</sub> decreases | |
| 14. |
A power transistor is a ____________ |
| A. | three layer, three junction device |
| B. | three layer, two junction device |
| C. | two layer, one junction device |
| D. | four layer, three junction device |
| Answer» C. two layer, one junction device | |