MCQOPTIONS
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MCQOPTIONS
This section includes 13 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
What is the capacitive reactance across the point contact diode when compared to normal PN junction diode |
| A. | lower |
| B. | higher |
| C. | equal |
| D. | cannot be determined |
| Answer» B. higher | |
| 2. |
During the manufacture of point contact diode, why is a relatively large current passed from cat whisker to silicon crystal? |
| A. | to control the amount of current flow |
| B. | to form small region of p type material |
| C. | to allow mechanical support for the sections |
| D. | to form anode and cathode regions |
| Answer» C. to allow mechanical support for the sections | |
| 3. |
The operating frequencies of the point contact diode is_________ |
| A. | 30KHz or above |
| B. | 10GHz or above |
| C. | 30GHz or above |
| D. | 10KHz or above |
| Answer» C. 30GHz or above | |
| 4. |
Which of the following are true?1) point contact diode has a metal whisker to make pressure contact during its operation2) it has high voltage rating3) its V-I characteristics are constant4) it has low breakdown voltage |
| A. | 1 and 2 |
| B. | 3 only |
| C. | 1 and 4 |
| D. | 2 only |
| Answer» D. 2 only | |
| 5. |
DURING_THE_MANUFACTURE_OF_POINT_CONTACT_DIODE,_WHY_IS_A_RELATIVELY_LARGE_CURRENT_PASSED_FROM_CAT_WHISKER_TO_SILICON_CRYSTAL??$ |
| A. | to control the amount of current flow |
| B. | to form small region of p type material |
| C. | to allow mechanical support for the sections |
| D. | to form anode and cathode regions |
| Answer» C. to allow mechanical support for the sections | |
| 6. |
What_is_the_capacitive_reactance_across_the_point_contact_diode_when_compared_to_normal_PN_junction_diode$ |
| A. | lower |
| B. | higher |
| C. | equal |
| D. | cannot be determined |
| Answer» B. higher | |
| 7. |
The operating frequencies of the point contact diode is________? |
| A. | 30KHz or above |
| B. | 10GHz or above |
| C. | 30GHz or above |
| D. | 10KHz or above |
| Answer» C. 30GHz or above | |
| 8. |
The application of a contact diode is_________ |
| A. | Clampers and clippers |
| B. | Voltage multipliers |
| C. | Rectifiers |
| D. | AM detectors |
| Answer» E. | |
| 9. |
The semiconductor junctions those are present in a contact diode_________ |
| A. | beryllium-copper and bronze-phosphor |
| B. | beryllium-phosphor and bronze-copper |
| C. | mercury-iodine |
| D. | tin-tungsten |
| Answer» B. beryllium-phosphor and bronze-copper | |
| 10. |
The cat whisker wire present in the contact diode is used for_________ |
| A. | for heat dissipation |
| B. | for charge transfer between sections |
| C. | maintaining the pressure between sections |
| D. | preventing current flow |
| Answer» D. preventing current flow | |
| 11. |
The barrier layer capacitance of a point contact diode is_________ |
| A. | 0.1pF to 1pF |
| B. | 5pF to 50pF |
| C. | 0.2pF to 2pF |
| D. | 0.008µF to 20µF |
| Answer» B. 5pF to 50pF | |
| 12. |
In the forward bias condition, the resistance of point contact diode is_________ |
| A. | less than that of a general PN diode |
| B. | greater than that of a general PN diode |
| C. | equal to that of a general PN diode |
| D. | varies exponentially than that of a general PN diode |
| Answer» B. greater than that of a general PN diode | |
| 13. |
The materials that are used in the construction of point contact diode are _________ |
| A. | Silicon |
| B. | SnTe or Bi<sub>2</sub>Te<sub>3</sub> |
| C. | GaS or CdS |
| D. | HgI |
| Answer» C. GaS or CdS | |