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This section includes 259 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering knowledge and support exam preparation. Choose a topic below to get started.
151. |
External modulation for                  modulation format allows the most sensitive coherent detection mechanism. |
A. | fsk |
B. | dsk |
C. | psk |
D. | ask |
Answer» D. ask | |
152. |
                       offers the potential for improving the coherent optical receiver sensitivity by increasing the choice of signalling frequencies. |
A. | mfsk |
B. | mdsk |
C. | mpsk |
D. | mask |
Answer» B. mdsk | |
153. |
The frequency deviation at frequencies above 1 MHz is typically |
A. | 10 to 20 ma-1 |
B. | 100 to 500 ma-1 |
C. | 1000 to 2000 ma-1 |
D. | 30 to 40 ma-1 |
Answer» C. 1000 to 2000 ma-1 | |
154. |
                 does not require an external modulator. |
A. | fsk |
B. | dsk |
C. | psk |
D. | ask |
Answer» B. dsk | |
155. |
Almost                    of the transmitter power is wasted in the use of external modulators. |
A. | half |
B. | quarter |
C. | one-third |
D. | twice |
Answer» B. quarter | |
156. |
                           is essentially a crude form of Amplitude shift keying. |
A. | analog modulation |
B. | digital intensity modulation |
C. | photodetector |
D. | receiver structure |
Answer» C. photodetector | |
157. |
Considering the values given below, calculate the mode separation in terms of free space wavelength for a laser. (Frequency separation = 2GHz, Wavelength = 0.5 μm) |
A. | 1.4×10-11 |
B. | 1.6×10-12 |
C. | 1×10-12 |
D. | 6×10-11 |
Answer» C. 1×10-12 | |
158. |
Longitudinal modes contribute only a single spot of light to the laser output. |
A. | true |
B. | false |
Answer» B. false | |
159. |
An injection laser has active cavity losses of 25 cm-1 and the reflectivity of each laser facet is 30%. Determine the laser gain coefficient for the cavity it has a length of 500μm. |
A. | 46 cm-1 |
B. | 51 cm-1 |
C. | 50 cm-1 |
D. | 49.07 cm-1 |
Answer» E. | |
160. |
A semiconductor laser crystal of length 5 cm, refractive index 1.8 is used as an optical source. Determine the frequency separation of the modes. |
A. | 2.8 ghz |
B. | 1.2 ghz |
C. | 1.6 ghz |
D. | 2 ghz |
Answer» D. 2 ghz | |
161. |
Doppler broadening is a homogeneous broadening mechanism. |
A. | true |
B. | false |
Answer» C. | |
162. |
43 μm. Determine the number of longitudinal modes. |
A. | 1×102 |
B. | 3×106 |
C. | 2.9×105 |
D. | 2.2×105 |
Answer» E. | |
163. |
The lower energy level contains more atoms than upper level under the conditions of |
A. | isothermal packaging |
B. | population inversion |
C. | thermal equilibrium |
D. | pumping |
Answer» D. pumping | |
164. |
                                     in the laser occurs when photon colliding with an excited atom causes the stimulated emission of a second photon. |
A. | light amplification |
B. | attenuation |
C. | dispersion |
D. | population inversion |
Answer» B. attenuation | |
165. |
An incandescent lamp is operating at a temperature of 1000K at an operating frequency of 5.2×1014 Hz. Calculate the ratio of stimulated emission rate to spontaneous emission rate. |
A. | 3×10-13 |
B. | 1.47×10-11 |
C. | 2×10-12 |
D. | 1.5×10-13 |
Answer» C. 2×10-12 | |
166. |
Which process gives the laser its special properties as an optical source? |
A. | dispersion |
B. | stimulated absorption |
C. | spontaneous emission |
D. | stimulated emission |
Answer» E. | |
167. |
How many types of sources of optical light are available? |
A. | one |
B. | two |
C. | three |
D. | four |
Answer» D. four | |
168. |
A device which converts electrical energy in the form of a current into optical energy is called as |
A. | optical source |
B. | optical coupler |
C. | optical isolator |
D. | circulator |
Answer» B. optical coupler | |
169. |
The active layer of E-LED is heavily doped with |
A. | zn |
B. | eu |
C. | cu |
D. | sn |
Answer» B. eu | |
170. |
The InGaAsP is emitting LEDs are realized in terms of restricted are |
A. | length strip geometry |
B. | radiance |
C. | current spreading |
D. | coupled optical power |
Answer» B. radiance | |
171. |
Mesa structured SLEDs are used |
A. | to reduce radiance |
B. | to increase radiance |
C. | to reduce current spreading |
D. | to increase current spreading |
Answer» D. to increase current spreading | |
172. |
In a multimode fiber, much of light coupled in the fiber from an LED is |
A. | increased |
B. | reduced |
C. | lost |
D. | unaffected |
Answer» D. unaffected | |
173. |
0375 V. Determine optical power launched into fiber. |
A. | 0.03 |
B. | 0.05 |
C. | 0.3 |
D. | 0.01 |
Answer» B. 0.05 | |
174. |
Internal absorption in DH surface emitter Burros type LEDs is |
A. | cannot be determined |
B. | negligible |
C. | high |
D. | very low |
Answer» E. | |
175. |
The techniques by Burros and Dawson in reference to homo structure device is to use an etched well in GaAs structure. |
A. | true |
B. | false |
Answer» B. false | |
176. |
In surface emitter LEDs, more advantage can be obtained by using |
A. | bh structures |
B. | qc structures |
C. | dh structures |
D. | gain-guided structure |
Answer» D. gain-guided structure | |
177. |
As compared to planar LED structure, Dome LEDs have                              External power efficiency                        effective emission area and                            radiance. |
A. | greater, lesser, reduced |
B. | higher, greater, reduced |
C. | higher, lesser, increased |
D. | greater, greater, increased |
Answer» C. higher, lesser, increased | |
178. |
The amount of radiance in planer type of LED structures is |
A. | low |
B. | high |
C. | zero |
D. | negligible |
Answer» B. high | |
179. |
The                              system is best developed and is used for fabricating both lasers and LEDs for the shorter wavelength region. |
A. | inp |
B. | gasb |
C. | gaas/gasb |
D. | gaas/alga as dh |
Answer» E. | |
180. |
How many types of hetero-junctions are available? |
A. | two |
B. | one |
C. | three |
D. | four |
Answer» B. one | |
181. |
A homo-junction is an interface between two adjoining single-crystal semiconductors with different band-gap energies. |
A. | true |
B. | false |
Answer» C. | |
182. |
A GaAs injection laser with an optical cavity has refractive index of 3.6. Calculate the reflectivity for normal incidence of the plane wave on the GaAs-air interface. |
A. | 0.61 |
B. | 0.12 |
C. | 0.32 |
D. | 0.48 |
Answer» D. 0.48 | |
183. |
A GaAs injection laser has a threshold current density of 2.5*103Acm-2 and length and width of the cavity is 240μm and 110μm respectively. Find the threshold current for the device. |
A. | 663 ma |
B. | 660 ma |
C. | 664 ma |
D. | 712 ma |
Answer» C. 664 ma | |
184. |
Population inversion is obtained at a p-n junction by |
A. | heavy doping of p-type material |
B. | heavy doping of n-type material |
C. | light doping of p-type material |
D. | heavy doping of both p-type and n-type material |
Answer» E. | |
185. |
Which impurity is added to gallium phosphide to make it an efficient light emitter? |
A. | silicon |
B. | hydrogen |
C. | nitrogen |
D. | phosphorus |
Answer» D. phosphorus | |
186. |
21*10-10cm3s-1. |
A. | 2ns |
B. | 1.39ns |
C. | 1.56ns |
D. | 2.12ms |
Answer» C. 1.56ns | |
187. |
The recombination in indirect band-gap semiconductors is slow. |
A. | true |
B. | false |
Answer» B. false | |
188. |
                                   is used when the optical emission results from the application of electric field. |
A. | radiation |
B. | efficiency |
C. | electro-luminescence |
D. | magnetron oscillator |
Answer» D. magnetron oscillator | |
189. |
The majority of the carriers in a p-type semiconductor are |
A. | holes |
B. | electrons |
C. | photons |
D. | neutrons |
Answer» B. electrons | |
190. |
The energy-level occupation for a semiconductor in thermal equilibrium is described by the |
A. | boltzmann distribution function |
B. | probability distribution function |
C. | fermi-dirac distribution function |
D. | cumulative distribution function |
Answer» D. cumulative distribution function | |
191. |
A perfect semiconductor crystal containing no impurities or lattice defects is called as |
A. | intrinsic semiconductor |
B. | extrinsic semiconductor |
C. | excitation |
D. | valence electron |
Answer» B. extrinsic semiconductor | |
192. |
Plastic fibers are less widely used than glass fibers. |
A. | true |
B. | false |
Answer» B. false | |
193. |
Numerical aperture is constant in case of step index fiber. |
A. | true |
B. | false |
Answer» B. false | |
194. |
How many propagation modes are present in single mode fibers? |
A. | one |
B. | two |
C. | three |
D. | five |
Answer» C. three | |
195. |
The difference between the modes’ refractive indices is called as |
A. | polarization |
B. | cutoff |
C. | fiber birefringence |
D. | fiber splicing |
Answer» D. fiber splicing | |
196. |
A single mode fiber has mode field diameter 10.2μm and V=2.20. What is the core diameter of this fiber? |
A. | 11.1μm |
B. | 13.2μm |
C. | 7.6μm |
D. | 10.1μm |
Answer» E. | |
197. |
Which equation is used to calculate MFD? |
A. | maxwell’s equations |
B. | peterman equations |
C. | allen cahn equations |
D. | boltzmann’s equations |
Answer» C. allen cahn equations | |
198. |
What is needed to predict the performance characteristics of single mode fibers? |
A. | the intermodal delay effect |
B. | geometric distribution of light in a propagating mode |
C. | fractional power flow in the cladding of fiber |
D. | normalized frequency |
Answer» C. fractional power flow in the cladding of fiber | |
199. |
An optical fiber has a core radius 2μm and a numerical aperture of 0.1. Will this fiber operate at single mode at 600 nm? |
A. | yes |
B. | no |
Answer» B. no | |
200. |
An optical fiber has core-index of 1.480 and a cladding index of 1.478. What should be the core size for single mode operation at 1310nm? |
A. | 7.31μm |
B. | 8.71μm |
C. | 5.26μm |
D. | 6.50μm |
Answer» E. | |