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This section includes 13 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices Circuits knowledge and support exam preparation. Choose a topic below to get started.
1. |
The current iD |
A. | Depends linearly on VOV in the saturation region |
B. | Depends on the square of VOV in the saturation region |
C. | Depends inversely on VOV in the triode region |
D. | None of the mentioned |
Answer» C. Depends inversely on VOV in the triode region | |
2. |
Which of the following is true for the saturation region? |
A. | VDG ≤ |Vtp| |
B. | VSD ≤| VOV| |
C. | VDG < |Vtp| |
D. | VSD <| VOV| |
Answer» B. VSD ≤| VOV| | |
3. |
An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOV and a drain current ID. If is VOV is doubled, and we must maintain operation at the edge of saturation, what value of drain current results? |
A. | 0.25ID |
B. | 0.5ID |
C. | 2ID |
D. | 4ID |
Answer» D. 4ID | |
4. |
An n-channel MOSFET operating with VOV=0.5V exhibits a linear resistance = 1 kΩ when VDS is very small. What is the value of the device transconductance parameter kn? |
A. | 2 mA/V2 |
B. | 20 mA/V2 |
C. | 0.2 A/V2 |
D. | 2 A/V2 |
Answer» B. 20 mA/V2 | |
5. |
Determine the conditions in which the MOSFET is operating in the saturation regioni. VGD > Vt (Threshold voltage)ii. VDS > VOViii. ID ∝ (VOV)2 |
A. | i, ii, and iii are correct |
B. | i and iii are correct |
C. | i and ii are correct |
D. | ii and iii are correctView Answer |
E. | ii. VDS > VOViii. ID ∝ (VOV)2 a) i, ii, and iii are correctb) i and iii are correctc) i and ii are correctd) ii and iii are correctView Answer |
Answer» E. ii. VDS > VOViii. ID ∝ (VOV)2 a) i, ii, and iii are correctb) i and iii are correctc) i and ii are correctd) ii and iii are correctView Answer | |
6. |
For MOSFET is to be used as a switch then it must operate ina) Cut-off regionb) Triode regionc) Saturation regiond) Both cut-off and triode region can be used |
A. | Cut-off regionb) Triode regionc) Saturation regiond) Both cut-off and triode region can be used a) i, ii, and iii are correct |
B. | Triode regionc) Saturation regiond) Both cut-off and triode region can be used a) i, ii, and iii are correctb) i and iii are correct |
C. | Saturation regiond) Both cut-off and triode region can be used a) i, ii, and iii are correctb) i and iii are correctc) i and ii are correct |
D. | Both cut-off and triode region can be used a) i, ii, and iii are correctb) i and iii are correctc) i and ii are correctd) ii and iii are correctView Answer |
Answer» E. | |
7. |
AN_NMOS_TRANSISTOR_IS_OPERATING_AT_THE_EDGE_OF_SATURATION_WITH_AN_OVERDRIVE_VOLTAGE_VOV_AND_A_DRAIN_CURRENT_ID._IF_IS_VOV_IS_DOUBLED,_AND_WE_MUST_MAINTAIN_OPERATION_AT_THE_EDGE_OF_SATURATION,_WHAT_VALUE_OF_DRAIN_CURRENT_RESULTS??$ |
A. | 0.25I<sub>D</sub> |
B. | 0.5I<sub>D</sub> |
C. | 2I<sub>D</sub> |
D. | 4I<sub>D</sub> |
Answer» B. 0.5I<sub>D</sub> | |
8. |
An n-channel MOSFET operating with VOV=0.5V exhibits a linear resistance = 1 kΩ when VDS is very small. What is the value of the device transconductance parameter kn?# |
A. | 2 mA/V<sup>2</sup> |
B. | 20 mA/V<sup>2</sup> |
C. | 0.2 A/V<sup>2</sup> |
D. | 2 A/V<sup>2</sup> |
Answer» E. | |
9. |
In the saturation region of the MOSFET the saturation current is |
A. | Independent of the voltage difference between the source and the drain |
B. | Depends directly on the voltage difference between the source and the drain |
C. | Depends directly on the overdriving voltage |
D. | Depends directly on the voltage supplied to the gate terminal |
Answer» D. Depends directly on the voltage supplied to the gate terminal | |
10. |
i, ii, and iii are correct |
A. | i and iii are correct |
B. | i and ii are correct |
C. | ii and iii are correct |
Answer» B. i and ii are correct | |
11. |
Determine the conditions in which the MOSFET is operating in the saturation region |
A. | |
B. | |
Answer» B. | |
12. |
For MOSFET is to be used as a switch then it must operate in |
A. | Cut-off region |
B. | Triode region |
C. | Saturation region |
D. | Both cut-off and triode region can be used |
Answer» E. | |
13. |
If a MOSFET is to be used in the making of an amplifier then it must work in |
A. | Cut-off region |
B. | Triode region |
C. | Saturation region |
D. | Both cut-off and triode region can be used |
Answer» D. Both cut-off and triode region can be used | |