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This section includes 8 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.
1. |
THE_BASIC_ADVANTAGE_OF_THE_CMOS_TECHNOLOGY_IS_THAT?$ |
A. | It is easily available |
B. | It has small size |
C. | It has lower power consumption |
D. | It has better switching capabilities |
Answer» D. It has better switching capabilities | |
2. |
The N-channel MOSFET is considered better than the P-channel MOSFET due to its$ |
A. | low noise levels |
B. | TTL compatibility |
C. | lower input impedance |
D. | faster operation |
Answer» E. | |
3. |
How does the MOSFET differ from the JFET? |
A. | JFET has a p-n junction |
B. | They are both the same |
C. | JFET is small in size |
D. | MOSFET has a base terminal |
Answer» B. They are both the same | |
4. |
For a MOSFET Vgs=3V, Idss=5A, and Id=2A. Find the pinch of voltage Vp |
A. | 4.08 |
B. | 8.16 |
C. | 16.32 |
D. | 0V |
Answer» C. 16.32 | |
5. |
Consider an ideal MOSFET. If Vgs = 0V, then Id = ? |
A. | Zero |
B. | Maximum |
C. | Id(on) |
D. | Idd |
Answer» B. Maximum | |
6. |
Which among the following devices is the most suited for high frequency applications? |
A. | BJT |
B. | IGBT |
C. | MOSFET |
D. | SCR |
Answer» D. SCR | |
7. |
At turn-on the initial delay or turn on delay is the time required for the |
A. | input inductance to charge to the threshold value |
B. | input capacitance to charge to the threshold value |
C. | input inductance to discharge to the threshold value |
D. | input capacitance to discharge to the threshold value |
Answer» C. input inductance to discharge to the threshold value | |
8. |
In the output characteristics of a MOSFET with low values of Vds, the value of the on-state resistance is |
A. | Vds/Ig |
B. | Vds/Id |
C. | 0 |
D. | ‚àû |
Answer» C. 0 | |