MCQOPTIONS
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MCQOPTIONS
This section includes 13 Mcqs, each offering curated multiple-choice questions to sharpen your Microwave Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The scattering parameter S11 for GaN HELMT increases with increase in frequency of operation |
| A. | True |
| B. | False |
| Answer» C. | |
| 2. |
HEMT fabricated using GaN and aluminum gallium nitride on a silicon substrate can be used in : |
| A. | High power transmitters |
| B. | High power receivers |
| C. | RADAR |
| D. | Smart antennas |
| Answer» B. High power receivers | |
| 3. |
A major disadvantage of high electron mobility transistor is that: |
| A. | They have low gain |
| B. | High manufacturing cost |
| C. | Temperature sensitive |
| D. | High driving voltage is required |
| Answer» C. Temperature sensitive | |
| 4. |
THE_SCATTERING_PARAMETER_S11_FOR_GAN_HELMT_INCREASES_WITH_INCREASE_IN_FREQUENCY_OF_OPERATION?$ |
| A. | True |
| B. | False |
| Answer» C. | |
| 5. |
HEMT_FABRICATED_USING_GAN_AND_ALUMINUM_GALLIUM_NITRIDE_ON_A_SILICON_SUBSTRATE_CAN_BE_USED_IN_:?$ |
| A. | High power transmitters |
| B. | High power receivers |
| C. | RADAR |
| D. | Smart antennas |
| Answer» B. High power receivers | |
| 6. |
A major disadvantage of high electron mobility transistor is that? |
| A. | They have low gain |
| B. | High manufacturing cost |
| C. | Temperature sensitive |
| D. | High driving voltage is required |
| Answer» C. Temperature sensitive | |
| 7. |
Since multiple layers of semiconductor materials is used in high electron mobility transistors, this results in: |
| A. | High gain |
| B. | Power loss |
| C. | Temperature sensitivity |
| D. | Thermal stress |
| Answer» E. | |
| 8. |
High drain current at RF levels is achieved with the biasing and decoupling circuitry for a dual polarity supply. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 9. |
High-power circuits generally use higher values of: |
| A. | Gate to source current |
| B. | Drain to source current |
| C. | Drain current |
| D. | Gate to source voltage |
| Answer» D. Gate to source voltage | |
| 10. |
The curve of IDS v/s VDS of an FET does not vary with the gate to source voltage applied. |
| A. | True |
| B. | False |
| Answer» C. | |
| 11. |
High electron mobility transistors can be constructed with the use of single semiconductor material like GaAs that have high electron mobility. |
| A. | True |
| B. | False |
| Answer» C. | |
| 12. |
MOSFETs can provide a power of several hundred watts when the devices are packaged in: |
| A. | Series |
| B. | Parallel |
| C. | Diagonal |
| D. | None of the mentioned |
| Answer» C. Diagonal | |
| 13. |
There exists no difference between the construction of GaAs MESFET and silicon MOSFET except for the material used in their construction. |
| A. | True |
| B. | False |
| Answer» C. | |