MCQOPTIONS
Saved Bookmarks
MCQOPTIONS
This section includes 657 Mcqs, each offering curated multiple-choice questions to sharpen your Testing Subject knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
No current flow in transistor is called |
| A. | malfunction |
| B. | cut off |
| C. | low performance |
| D. | out come |
| Answer» C. low performance | |
| 2. |
The behavior of a positive logical NAND gate in terms of low input produces a |
| A. | low output |
| B. | medium output |
| C. | high output |
| D. | both a and b |
| Answer» D. both a and b | |
| 3. |
DTL stands for |
| A. | Digital transistor logic |
| B. | Diode transistor logic |
| C. | Digital transistor league |
| D. | Diode transistor league |
| Answer» C. Digital transistor league | |
| 4. |
1ns is the value equal to |
| A. | 10^-1 |
| B. | 10^-3 |
| C. | 10^-6 |
| D. | 10^-9 |
| Answer» E. | |
| 5. |
Common emitter transistors are |
| A. | NPN |
| B. | PNP |
| C. | RTL |
| D. | CMOS |
| Answer» B. PNP | |
| 6. |
CRITICAL_DEFECTS_PER_UNIT_CHIP_AREA_IS__________FOR_A_MOS_TRANSISTOR.?$ |
| A. | High |
| B. | Low |
| C. | Neutral |
| D. | Unpredictable |
| Answer» C. Neutral | |
| 7. |
MOS_is_being_used_in$ |
| A. | LSI |
| B. | VLSI |
| C. | MSI |
| D. | Both LSI and VLSI |
| Answer» E. | |
| 8. |
Why MOSFET is preferred over BJT in IC components? |
| A. | MOSFET has low packing density |
| B. | MOSFET has medium packing density |
| C. | MOSFET has high packing density |
| D. | MOSFET has no packing density |
| Answer» B. MOSFET has medium packing density | |
| 9. |
What is used to higher the speed of operation in MOSFET fabrication? |
| A. | Ceramic gate |
| B. | Silicon dioxide |
| C. | Silicon nitride |
| D. | Poly silicon gate |
| Answer» E. | |
| 10. |
A technique used to reduce the magnitude of threshold voltage of MOSFET is the |
| A. | Use of complementary MOSFET |
| B. | Use of Silicon nitride |
| C. | Using thin film technology |
| D. | None of the mentioned |
| Answer» C. Using thin film technology | |
| 11. |
Which of the following plays an important role in improving device performance of MOSFET? |
| A. | Dielectric constant |
| B. | Threshold voltage |
| C. | Power supply voltage |
| D. | Gate to drain voltage |
| Answer» C. Power supply voltage | |
| 12. |
Which insulating layer used in fabrication of MOSFET? |
| A. | Aluminium oxide |
| B. | Silicon Nitride |
| C. | Silicon dioxide |
| D. | None of the mentioned |
| Answer» D. None of the mentioned | |
| 13. |
What are the types of MOSFET devices available? |
| A. | P-type enhancement type MOSFET |
| B. | N-type enhancement type MOSFET |
| C. | Depletion type MOSFET |
| D. | All of the mentioned |
| Answer» E. | |
| 14. |
The full form of MOS is |
| A. | Metal oxide semiconductor |
| B. | Metal oxygen semiconductor |
| C. | Metallic oxide semiconductor |
| D. | Metallic oxygen semiconductor |
| Answer» B. Metal oxygen semiconductor | |