MCQOPTIONS
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MCQOPTIONS
This section includes 2 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
An n-channel MOS transistor is made on a p-type substrate with Na = 1015 cm-3. Find approximate depletion charge per unit area (Qd) at strong inversion.\(\left\{ {ln\;\left( {10} \right) = 2.3,\;\;\sqrt {0.046} \approx 0.215,\;\;{n_i} = {{10}^{10}}c{m^{ - 3}}} \right\}\) |
| A. | -6.9 × 10-8 C/cm2 |
| B. | 6.9 × 10-8 C/cm2 |
| C. | -3.4 × 10-8 C/cm2 |
| D. | 3.4 × 10-8 C/cm2 |
| Answer» D. 3.4 × 10-8 C/cm2 | |
| 2. |
Assertion (A) : The total capacitance of a MOS system is a series combination of insulator capacitance and semiconductor depletion layer capacitance.Reason (R): MOS structure is an integral part of MOSFET |
| A. | Both (A) and (R) are true and (R) is the correct explanation of (A). |
| B. | Both (A) and (R) are true, but (R) is not the correct explanation of (A) |
| C. | (A) is true, but (R) is false |
| D. | (A) false, but (R) is true |
| Answer» C. (A) is true, but (R) is false | |