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This section includes 12 Mcqs, each offering curated multiple-choice questions to sharpen your Microwave Engineering knowledge and support exam preparation. Choose a topic below to get started.
1. |
MMICs have higher circuit flexibility as compared to other microwave integrated fabrication methods. |
A. | True |
B. | False |
Answer» B. False | |
2. |
MMICs are the best microwave integrated circuit fabrication methodologies without any drawbacks in it. |
A. | True |
B. | False |
Answer» C. | |
3. |
MMICS_ARE_THE_BEST_MICROWAVE_INTEGRATED_CIRCUIT_FABRICATION_METHODOLOGIES_WITHOUT_ANY_DRAWBACKS_IN_IT.?$ |
A. | True |
B. | False |
Answer» C. | |
4. |
MMICs_have_higher_circuit_flexibility_as_compared_to_other_microwave_integrated_fabrication_methods.$ |
A. | True |
B. | False |
Answer» B. False | |
5. |
Processing in MMICs is done by _________? |
A. | Ion implantation |
B. | Net list generation |
C. | Floor planning |
D. | None of the mentioned |
Answer» B. Net list generation | |
6. |
Resistors used at normal operating frequencies can be directly used at microwave frequencies in MMIc. |
A. | True |
B. | False |
Answer» C. | |
7. |
For the capacitors used in MMICs, the insulating dielectric films used are: |
A. | Air |
B. | SiO |
C. | Titanium |
D. | GaAs |
Answer» C. Titanium | |
8. |
Transmission lines and other conductors in microwave devices are usually made with ___________ |
A. | Gold metallization |
B. | Silver metallization |
C. | Copper metallization |
D. | Zinc metallization |
Answer» B. Silver metallization | |
9. |
GaAs MESFETs are versatile device because it finds application in: |
A. | Low-noise amplifiers |
B. | High gain amplifiers |
C. | Mixers |
D. | All of the mentioned |
Answer» E. | |
10. |
The substrate of an MMIC must be a _____________ to accommodate the fabrication of all the type of devices. |
A. | Semiconductor |
B. | Insulator |
C. | Partial conductors |
D. | Metals operable at high frequencies |
Answer» B. Insulator | |
11. |
MMICs are high cost devices that involve complex fabrication methods and contain multiple layers to contain even small circuits. |
A. | True |
B. | False |
Answer» C. | |
12. |
Progress in ________ and other related semiconductors material processing led to the feasibility of monolithic microwave integrated circuits. |
A. | GaAs |
B. | Silicon |
C. | Germanium |
D. | GaAlAs |
Answer» B. Silicon | |