A major disadvantage of high electron mobility transistor is that:

High driving voltage is required

Explore topic-wise MCQs in Microwave Engineering.

This section includes 2 Mcqs, each offering curated multiple-choice questions to sharpen your Microwave Engineering knowledge and support exam preparation. Choose a topic below to get started.

1.	HEMT fabricated using GaN and aluminum gallium nitride on a silicon substrate can be used in :
A.	High power transmitters
B.	High power receivers
C.	RADAR
D.	Smart antennas
Answer» B. High power receivers

Discussion

2.	A major disadvantage of high electron mobility transistor is that:
A.	They have low gain
B.	High manufacturing cost
C.	Temperature sensitive
D.	High driving voltage is required
Answer» C. Temperature sensitive

Discussion

Explore topic-wise MCQs in Microwave Engineering.

HEMT fabricated using GaN and aluminum gallium nitride on a silicon substrate can be used in :

A major disadvantage of high electron mobility transistor is that: