MCQOPTIONS
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MCQOPTIONS
This section includes 2 Mcqs, each offering curated multiple-choice questions to sharpen your Microwave Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
HEMT fabricated using GaN and aluminum gallium nitride on a silicon substrate can be used in : |
| A. | High power transmitters |
| B. | High power receivers |
| C. | RADAR |
| D. | Smart antennas |
| Answer» B. High power receivers | |
| 2. |
A major disadvantage of high electron mobility transistor is that: |
| A. | They have low gain |
| B. | High manufacturing cost |
| C. | Temperature sensitive |
| D. | High driving voltage is required |
| Answer» C. Temperature sensitive | |