Explore topic-wise MCQs in Electrical Engineering.

This section includes 1232 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering knowledge and support exam preparation. Choose a topic below to get started.

1101.

a garin boundary is a transition region which represents _

A. imperfectio ns in arrengement of atoms
B. foreign atom located in th region
C. region with unique crystal structure
D. none of the above
Answer» B. foreign atom located in th region
1102.

in a given material adjacent grains will have

A. same crystal structure
B. different crystal
C. same crystal structure
D. a or b
Answer» E.
1103.

a garin boundary represents

A. one dimensional defect
B. zero dimensional defect
C. two dimenstiona l defect
D. none of the above
Answer» D. none of the above
1104.

the is defect that causes sepeartion of grain

A. grain boundary
B. twin boundary
C. stacking faults
D. none of the above
Answer» B. twin boundary
1105.

the surface defects are introduced in the material during of material

A. solidificatio n
B. heat treatment
C. plastic deformation
D. all of the above
Answer» E.
1106.

surafec defects are associated with

A. defects within same crystal structure with different orientation of atomic planes
B. defects within adjacent region consisting of different crystal structure
C. defects within adjacent region consisting of same crystal structure
D. any of the above
Answer» E.
1107.

surface defects are

A. one dimensional defect
B. two dimensional defect
C. theree dimensional defect
D. none of the above
Answer» C. theree dimensional defect
1108.

linear defects increase and Decrease

A. hardness, electrical conductivity
B. electrical conductivity , hardness
C. hardness, electrical resistance
D. electrical resistance, hardness
Answer» D. electrical resistance, hardness
1109.

the magnitude of edge dislocation in a lattice structure can be measured by

A. miller indices
B. burgers vector
C. microscope
D. none of the above
Answer» C. microscope
1110.

the magnitude of lattice distortion in edge dislocation si near the dislocation as compared to region away from dislocation

A. constant
B. lower
C. higher
D. varies randomly
Answer» D. varies randomly
1111.

burgers vector

A. is a measure of lattice distortion
B. is a measure of lattice distortion and is measured as distance along the close packed directions
C. stacking faults
D. none of the above
Answer» C. stacking faults
1112.

a measure of lattice distortion which is measured as a distance along the close packed directions

A. burgers vector
B. barbas vector
C. any one of above
D. none of the above
Answer» B. barbas vector
1113.

the linear defects are introduced in the material during _ of material

A. solidificatio n
B. heat treatment
C. plastic deformation
D. all of the above
Answer» E.
1114.

the defect associated with addition / missing / misalighnment of a series of atoms from its designated posiiton is called as

A. point defect
B. linear defect
C. surface defect
D. none of the above
Answer» C. surface defect
1115.

point defect increase and decrease

A. hardness, electrical conductivity
B. electrical conductivity , hardness
C. hardness, electrical resistance
D. electrical resistance, hardness
Answer» B. electrical conductivity , hardness
1116.

if an anion and cation are absent in pair the defect is known as

A. schottky
B. vacancy
C. substitution al
D. frenkel
Answer» B. vacancy
1117.

Frenkel defect is associated with

A. vacancy and self interstitial defect
B. vacancy and substitution al defect
C. substitution al and self intestitial defect
D. none of the above
Answer» B. vacancy and substitution al defect
1118.

substitutional impurity defect is associated with

A. atom leaves its posiiton and locates in the interstitial sites
B. foreign atom occupies the lattice posiiton of regular atomic structure
C. foreign atom occupies the interstitial sites
D. missing of an atom from its designated position
Answer» C. foreign atom occupies the interstitial sites
1119.

when any atom occupies the interstitial position of material increases

A. strength
B. hardness
C. both of the above
D. none of the above
Answer» B. hardness
1120.

any atom when leaves its position and occupies the interstitial sites is called as

A. slf interstitial
B. interstitial
C. both of the above
D. none of the above
Answer» B. interstitial
1121.

vacancy defect is assocoated with

A. atom leaves its position and locates in the interstitial sites
B. missing of an atom from its designated position
C. foreign atom occupies the interstitial sites
D. both a and b
Answer» E.
1122.

atoms are bonded with each other through               bond

A. covalent
B. ionic
C. both a and b
D. a or b
Answer» E.
1123.

the bonding between atoms breaks due to the

A. reduction in energy possesed by them
B. increase in energy possesed by them
C. chemical reaction
D. none of the above
Answer» C. chemical reaction
1124.

lattice vibration affects the                    properties of material

A. electrical
B. magnetic
C. thermal
D. all of the above
Answer» E.
1125.

which of the following is a type of surface defect ?

A. dislocation
B. low angle grain boundary
C. schottky
D. both b and c
Answer» C. schottky
1126.

which of the following defect is not surface defect ?

A. dislocation
B. low angle grain boundary
C. schottky
D. both b and c
Answer» E.
1127.

which of the following is line defect ?

A. dislocation
B. low angle grain boundary
C. schottky
D. both b and c
Answer» B. low angle grain boundary
1128.

whioch of the following is not line defect ?

A. dislocation
B. low angle grain boundary
C. schottky
D. both b and c
Answer» E.
1129.

surface defects includes

A. edge and screw dislocation
B. edge dislocations and grain boundaries
C. grain boundaries, twin boundaries, lattice vibrations
D. grain boundaries, twin boundaries, low angle boundary
Answer» E.
1130.

line defects include

A. edge and screw dislocation
B. edge dislocations and grain boundaries
C. screw dislocations and stacking faults
D. vacancy, substitution al, interstitial
Answer» B. edge dislocations and grain boundaries
1131.

point defects include

A. vacancy, substitution al, edge dislocations
B. substitution al, edge dislocation, grain boundaries
C. substitution al, edge dislocation ,stacking faults
D. vacancy, substitution al, interstitial defects
Answer» E.
1132.

vacancy, self interstitial, substitutional are all types of

A. line defects
B. surface defects
C. voliume defects
D. point defects
Answer» E.
1133.

the effect of imperfections in crystal struture can be

A. desirable
B. adverse
C. both a or b
D. none of the above
Answer» D. none of the above
1134.

the imperfection sin crystal structure influence the of materials

A. electrical conductivity
B. density
C. strength
D. all of the above
Answer» E.
1135.

imperfections are introduced during

A. plastic deformation
B. metal forming
C. heat treatment
D. all of the above
Answer» E.
1136.

the mechanical property of material depends on

A. size
B. weight
C. crystal structure
D. none of the above
Answer» D. none of the above
1137.

due to change in mechanical properties of the material can be changed

A. color
B. shape
C. imperfectio ns
D. none of the above
Answer» D. none of the above
1138.

a crystalline material has atoms in                ordered location which is

A. random, non repetitive
B. perfect, repetitive
C. perfect, non repetitive
D. none of the above
Answer» C. perfect, non repetitive
1139.

which of the following is not true for BCC structure

A. it has atomic packing factor of 0.58
B. it has no central atom
C. iat has face atom shared by consecutive two faces
D. none of the above
Answer» E.
1140.

which of the following is true for BCC structure

A. it has atomic packing factor of 0.52
B. it has no central atom
C. iat has face atom shared by consecutive two faces
D. none of the above
Answer» C. iat has face atom shared by consecutive two faces
1141.

which of the following is not true for SC structure

A. it has atomic packing factor of 0.58
B. it has no central atom
C. iat has face atom shared by consecutive two faces
D. none of the above
Answer» E.
1142.

which of the following is true for SC structure

A. it has atomic packing factor of
B. it has no central atom
C. iat has face atom shared by consecutive
D. none of the above
Answer» B. it has no central atom
1143.

which of the following is not true for FCC structure

A. it has atomic packing factor of 0.52
B. it has no central atom
C. iat has face atom shared by consecutive two faces
D. none of the above
Answer» B. it has no central atom
1144.

the correct order of packing factor for FCC, HCP, BCC is

A. 0.52, 0.68, 0.74
B. 0.74, 0.74, 0.68
C. 0.74, 0.68, 0.52
D. 0.52, 0.68, 0.74
Answer» C. 0.74, 0.68, 0.52
1145.

the correct order of packing factor for SC, BCC, FCC is

A. 0.74, 0.52, 0.68
B. 0.68, 0.74, 0.74
C. 0.74, 0.68, 0.52
D. 0.52, 0.68, 0.74
Answer» E.
1146.

which of the following is true for FCC structure

A. it has atomic packing factor of 0.74
B. it has no central atom
C. iat has face atom shared by consecutive two faces
D. all of the above
Answer» E.
1147.

the correct order of packing factor for BCC, FCC, HCP is

A. 0.52,0.68,0. 74
B. 0.68,0.74,0. 74
C. 0.74, 0.68, 0.52
D. 0.52,0.68,0. 74
Answer» C. 0.74, 0.68, 0.52
1148.

Lead has crystal structure

A. simple cubic
B. body centred
C. face centred
D. hexagonal close packed
Answer» D. hexagonal close packed
1149.

Cadmium has crystal structure

A. simple cubic
B. body centred
C. face centred
D. hexagonal close packed
Answer» E.
1150.

Cobalt has crystal structure

A. simple cubic
B. body centred
C. face centred
D. hexagonal close packed
Answer» E.