MCQOPTIONS
Saved Bookmarks
MCQOPTIONS
This section includes 74 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 51. |
For normal operation of a transistor, the collector-base junction is |
| A. | always reverse biased |
| B. | always forward biased |
| C. | is grounded |
| D. | unbiased |
| Answer» B. always forward biased | |
| 52. |
Given below are two statements. One is labeled as Assertion (A) and the other is labeled reason (R):Assertion (A): The bipolar junction transistor is designed to get large β.Reasons (R): During Fabrication, the base width is kept small.Choose the correct option: |
| A. | Both (A) and (R) are true and (R) is the correct explanation of (A) |
| B. | Both (A) and (R) are true and (R) is not the correct explanation of (A) |
| C. | (A) is true but (R) is false |
| D. | (A) is false but (R) is true |
| Answer» B. Both (A) and (R) are true and (R) is not the correct explanation of (A) | |
| 53. |
Input resistance is least in the case of ________ Configuration of transistors. |
| A. | CE |
| B. | CB |
| C. | CC |
| D. | CC or CE |
| Answer» C. CC | |
| 54. |
In Early effect: |
| A. | Increase in magnitude of Collector voltage increases space charge width at the input junction of BJT |
| B. | Increase in magnitude of Emitter - Base voltage increases space charge width at the input junction of BJT |
| C. | Increase in magnitude of Collector voltage increases space charge width at the output junction of BJT |
| D. | Increase in magnitude of Emitter-Base voltage increases space charge width at the output junction of BJT |
| Answer» D. Increase in magnitude of Emitter-Base voltage increases space charge width at the output junction of BJT | |
| 55. |
For the load line and Q-point defined in the figure, find the values of VCC, RC and RB for fixed-bias configuration. |
| A. | VCC = 20 VRC = 2 kΩRB = 772 KΩ |
| B. | VCC = 2 VRC = 7.5 kΩRB = 77 kΩ |
| C. | VCC = 15 VRC = 5 kΩRB = 72 kΩ |
| D. | VCC = 10 VRC = 3 kΩRB = 770 kΩ |
| Answer» B. VCC = 2 VRC = 7.5 kΩRB = 77 kΩ | |
| 56. |
Directions : Each of the next items consists of two statements, one labelled as the `Assertion (A)' and the other as 'Reason (R)' You are to examine these two statements carefully and select the answers to these items using the codes given below :Assertion (A) : It is desired that the high frequency transistors should work at low collector currents for better high frequency performance.Reason (R) : The diffusion capacitance is directly proportional to the emitter current. |
| A. | Both A and R are individually true and R is the correct explanation of A |
| B. | Both A and R are individually true but R is not the correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» B. Both A and R are individually true but R is not the correct explanation of A | |
| 57. |
A transistor when connected in CE mode has: |
| A. | Medium input resistance and medium output resistance |
| B. | Low input resistance and a low output resistance |
| C. | Low input resistance and high output resistance |
| D. | High input resistance and high output resistance |
| Answer» B. Low input resistance and a low output resistance | |
| 58. |
In a NPN transistor, if the base current is 100 μA and the current gain, β = 200, the collector current will be: |
| A. | 2 mA |
| B. | 100 mA |
| C. | 10 mA |
| D. | 20 mA |
| Answer» E. | |
| 59. |
Compared to field effect photo transistor, bipolar photo transistors are |
| A. | more sensitive and faster |
| B. | less sensitive and slower |
| C. | more sensitive and slower |
| D. | less sensitive and faster |
| Answer» B. less sensitive and slower | |
| 60. |
Bipolar Junction Transistor is a |
| A. | Voltage controlled device |
| B. | Current controlled device |
| C. | Very high input impedance device |
| D. | None of the above |
| Answer» C. Very high input impedance device | |
| 61. |
In a BJT, the base spreading resistance is of the order of |
| A. | 1Ω |
| B. | 10Ω |
| C. | 100Ω |
| D. | 1000Ω |
| Answer» D. 1000Ω | |
| 62. |
Calculate the value of IE for a transistor that has αdc = 0.98 and IB = 100 μA |
| A. | 5.0 mA |
| B. | 4.8 mA |
| C. | 4.9 mA |
| D. | 6.4 mA |
| Answer» B. 4.8 mA | |
| 63. |
Except at high frequencies of switching, nearly all the power dissipated in the switch mode operation of a BJT occurs, when the transistor is in the |
| A. | Active region |
| B. | Blocking state |
| C. | Hard saturation region |
| D. | Soft saturation region |
| Answer» D. Soft saturation region | |
| 64. |
In a bipolar junction transistor, the base region is made very thin so that: |
| A. | Recombination in the base region is minimum |
| B. | The base can be easily fabricated |
| C. | An electric field gradient in the base is high |
| D. | base can be easily biased |
| Answer» B. The base can be easily fabricated | |
| 65. |
IF_THE_EMITTER-BASE_JUNCTION_IS_FORWARD_BIASED_AND_THE_COLLECTOR-BASE_JUNCTION_IS_REVERSE_BIASED,_WHAT_WILL_BE_THE_REGION_OF_OPERATION_FOR_A_TRANSISTOR??$ |
| A. | cut off region |
| B. | saturated region |
| C. | inverted region |
| D. | active region |
| Answer» E. | |
| 66. |
The transfer of a signal in a transistor is_________$ |
| A. | low to high resistance |
| B. | high to low resistance |
| C. | collector to base junction |
| D. | emitter to base junction |
| Answer» B. high to low resistance | |
| 67. |
When does the transistor act like an open switch? |
| A. | cut off region |
| B. | inverted region |
| C. | saturated region |
| D. | active region |
| Answer» B. inverted region | |
| 68. |
In the saturated region, the transistor acts like a_________ |
| A. | poor transistor |
| B. | amplifier |
| C. | open switch |
| D. | closed switch |
| Answer» E. | |
| 69. |
Which of the following are true for a PNP transistor? |
| A. | the emitter current is less than the collector current |
| B. | the collector current is less than the emitter current |
| C. | the electrons are majority charge carriers |
| D. | the holes are the minority charge carriers |
| Answer» C. the electrons are majority charge carriers | |
| 70. |
In the operation of an NPN transistor, the electrons cross which region? |
| A. | emitter region |
| B. | the region where there is high depletion |
| C. | the region where there is low depletion |
| D. | P type base region |
| Answer» E. | |
| 71. |
Which of the following is true in construction of a transistor? |
| A. | the collector dissipates lesser power |
| B. | the emitter supplies minority carriers |
| C. | the collector is made physically larger than the emitter region |
| D. | the collector collects minority charge carriers |
| Answer» D. the collector collects minority charge carriers | |
| 72. |
In an NPN transistor, the arrow is pointed towards_________ |
| A. | the collector |
| B. | the base |
| C. | depends on the configuration |
| D. | the emitter |
| Answer» E. | |
| 73. |
What is the left hand section of a junction transistor called? |
| A. | base |
| B. | collector |
| C. | emitter |
| D. | depletion region |
| Answer» D. depletion region | |
| 74. |
The advantages over the vacuum triode for a junction transistor is_________ |
| A. | high power consumption |
| B. | high efficiency |
| C. | large size |
| D. | less doping |
| Answer» C. large size | |