MCQOPTIONS
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MCQOPTIONS
This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Which of the following is true about n-channel E-MOSFET? |
| A. | Electrons are the majority charge carries |
| B. | Holes are the majority charge carries |
| C. | Both holes and electrons are present in same ratio |
| D. | Neutrons are the charge carriers |
| Answer» B. Holes are the majority charge carries | |
| 2. |
In an n-channel E-MOSFET, the current becomes constant in saturation region. Which of the following condition depicts this? |
| A. | VDS = 2Vgs-Vt |
| B. | VDS > Vgs-Vt |
| C. | VDS ≤ Vgs-Vt |
| D. | VDS = Vgs |
| Answer» C. VDS ≤ Vgs-Vt | |
| 3. |
In a p-channel E-MOSFET, the current becomes constant in saturation region. Which of the following condition depicts this? |
| A. | VDS = 2Vgs-Vt |
| B. | VDS > Vgs-Vt |
| C. | VDS ≤ Vgs-Vt |
| D. | VDS = Vgs |
| Answer» D. VDS = Vgs | |
| 4. |
Which of the following is the necessary to hold drain current in 0 for p channel E-MOSFET? |
| A. | Vgs > Vt |
| B. | Vgs < Vt |
| C. | Vgs < 2Vt |
| D. | 2Vgs > Vt |
| Answer» B. Vgs < Vt | |
| 5. |
Which of the following is the necessary to hold drain current in 0 for n channel E-MOSFET? |
| A. | Vgs > Vt |
| B. | Vgs < Vt |
| C. | Vgs < 2Vt |
| D. | 2Vgs > Vt |
| Answer» C. Vgs < 2Vt | |
| 6. |
Determine the value of K (System constructor constant) for a MOSFET with Vgs=8V,Vt=2V and ID=10A? |
| A. | 0.001A/v2 |
| B. | 0.278 A/v2 |
| C. | 0.5761A/v2 |
| D. | 0.0021A/v2 |
| Answer» C. 0.5761A/v2 | |
| 7. |
Determine the least voltage VDS required to operate E-MOSFET on active region. (Vgs=2V,Vt=0.7V) |
| A. | 1.2V |
| B. | 2V |
| C. | 0V |
| D. | 1.3V |
| Answer» E. | |
| 8. |
Necessary condition to create a channel in n-channel enhancement MOSFET is ____________ |
| A. | Vgs > Vt |
| B. | Vgs < Vt |
| C. | Vgs < 2Vt |
| D. | 2Vgs > Vt |
| Answer» B. Vgs < Vt | |
| 9. |
What will happen if a metal is used instead of Silicon dioxide in the fabrication of MOSFET? |
| A. | Device burns |
| B. | No changes in the behaviour of MOSFET |
| C. | Input impedance increases |
| D. | Current cannot be generated in MOSFET |
| Answer» B. No changes in the behaviour of MOSFET | |
| 10. |
Which of the following is true about MOSFET? |
| A. | There is no direction between channel and gate terminal |
| B. | There exists a channel and gate short connection |
| C. | Channel is not present and cannot be created |
| D. | They have low input impedance |
| Answer» B. There exists a channel and gate short connection | |