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This section includes 9 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.
1. |
THE_BODY_OF_AN_IGBT_CONSISTS_OF_A?$ |
A. | p-layer |
B. | n-layer |
C. | p-n layer |
D. | metal |
Answer» B. n-layer | |
2. |
At_present,_the_state-of-the-art_semiconductor_devices_are_begin_manufactured_using$ |
A. | Semiconducting Diamond |
B. | Gallium-Arsenide |
C. | Germanium |
D. | Silicon-Carbide |
Answer» E. | |
3. |
An IGBT is also know a? |
A. | MOIGT (Metal oxide insulated gate transistor) |
B. | COMFET (Conductively modulated FET) |
C. | GEMFET (Grain modulated FET) |
D. | all of the mentioned |
Answer» E. | |
4. |
The approximate equivalent circuit of an IGBT consists of |
A. | a BJT & a MOSFET |
B. | a MOSFET & a MCT |
C. | two BJTs |
D. | two MOSFETs |
Answer» B. a MOSFET & a MCT | |
5. |
In an IGBT, during the turn-on time |
A. | Vge decreases |
B. | Ic decreases |
C. | Vce decreases |
D. | none of the mentioned |
Answer» D. none of the mentioned | |
6. |
Latch-up occurs in an IGBT when |
A. | Vce reaches a certain value |
B. | Ic reaches a certain value |
C. | Ig reaches a certain value |
D. | the device temperature reaches a certain value |
Answer» C. Ig reaches a certain value | |
7. |
The static V-I curve of an IGBT is plotted with |
A. | Vce as the parameter |
B. | Ic as the parameter |
C. | Vge as the parameter |
D. | Ig as the parameter |
Answer» D. Ig as the parameter | |
8. |
A latched up IGBT can be turned off by |
A. | forced commutation of current |
B. | forced commutation of voltage |
C. | use of a snubber circuit |
D. | none of the mentioned |
Answer» B. forced commutation of voltage | |
9. |
When latch-up occurs in an IGBT |
A. | Ig is no longer controllable |
B. | Ic is no longer controllable |
C. | the device turns off |
D. | Ic increases to a very high value |
Answer» C. the device turns off | |