MCQOPTIONS
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This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Microwave Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
with the increase in the operating frequency of a BJT, the S22 parameter of the transistor: |
| A. | increases |
| B. | decreases |
| C. | remains constant |
| D. | none of the mentioned |
| Answer» C. remains constant | |
| 2. |
In the hybrid –π model of a BJT, the capacitance Cc between the base and collector in the hybrid –π model is ignored. |
| A. | true |
| B. | false |
| Answer» B. false | |
| 3. |
The upper frequency limit of BJT depends on the: |
| A. | collector length in the transistor |
| B. | base length |
| C. | emitter length |
| D. | driving voltage |
| Answer» C. emitter length | |
| 4. |
Bipolar junction transistor is a ________ driven device. |
| A. | current |
| B. | voltage |
| C. | power |
| D. | none of the mentioned |
| Answer» B. voltage | |
| 5. |
One major disadvantage of BJTs over FETs is that: |
| A. | they have low gain |
| B. | they do not have a good noise figure |
| C. | low bandwidth |
| D. | none of the mentioned |
| Answer» C. low bandwidth | |
| 6. |
At frequency range of about 2-4 GHz, BJTs are preferred over FETs. |
| A. | true |
| B. | false |
| Answer» B. false | |
| 7. |
Silicon junction transistors are used as amplifiers at frequency range of about: |
| A. | 5-10 MHz |
| B. | 2-10 GHz |
| C. | 40-50 MHz |
| D. | 12-45 GHz |
| Answer» C. 40-50 MHz | |
| 8. |
Bipolar junction transistors have _______ 1/f characteristics hence making them suitable for oscillators. |
| A. | high |
| B. | low |
| C. | constant |
| D. | decreasing exponential |
| Answer» C. constant | |
| 9. |
BJTs are suitable for RF applications because: |
| A. | good performance in terms of frequency |
| B. | power capacity |
| C. | noise characteristics |
| D. | all of the mentioned |
| Answer» E. | |
| 10. |
BJTs are bipolar junction transistors. The name bipolar is given because: |
| A. | they are made of n type and p type semiconductor |
| B. | they have holes as charge carriers |
| C. | they have electrons as charge carriers |
| D. | none of the mentioned |
| Answer» E. | |