Explore topic-wise MCQs in Power Electronics Questions & Answers Power Diodes-1.

This section includes 2 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics Questions & Answers Power Diodes-1 knowledge and support exam preparation. Choose a topic below to get started.

1.

The peak inverse current IP for a power diode is given by the expression

A. I<sub>P</sub>=t + di/dt
B. I<sub>P</sub>=t * log u2061i
C. I<sub>P</sub>=t * di/dt
D. I<sub>P</sub>=t * t*i dt
Answer» D. I<sub>P</sub>=t * t*i dt
Discussion
2.

To make a signal diode suitable for high current &amp; high voltage carrying applications with minimum losses, ________

A. a lightly doped n layer is grown between the two p &amp; n layers
B. a heavily doped n layer is grown between the two p &amp; n layers
C. a lightly doped p layer is grown between the two p &amp; n layers
D. a heavily doped p layer is grown between the two p &amp; n layers
Answer» B. a heavily doped n layer is grown between the two p &amp; n layers
Discussion