Operating point represents ___________

Values of IC and VCE when signal is applied

Zero signal values of IC and VCE

A heat sink is generally used with a transistor to ___________

compensate for excessive doping

prevent excessive temperature rise

The purpose of resistance in the emitter circuit of a transistor amplifier is to ___________

Limit the maximum emitter current

Limit the change in emitter current

The value of VBE ___________

Depends upon IC to moderate extent

303 + Mcqs in Field Effect Transistors in Electronics Page 4 McqOptions

151.	Operating point represents ___________
A.	Values of IC and VCE when signal is applied
B.	The magnitude of signal
C.	Zero signal values of IC and VCE
D.	None of the above
Answer» D. None of the above

Discussion

152.	The circuit that provides the best stabilization of operating point is ___________
A.	Base resistor bias
B.	Collector feedback bias
C.	Potential divider bias
D.	None of the above
Answer» D. None of the above

Discussion

153.	The Q of a tuned circuit refers to the property of ___________
A.	Sensitivity
B.	Fidelity
C.	Selectivity
D.	None of the above
Answer» D. None of the above

Discussion

154.	At parallel resonance, the ratio L/C is ___________
A.	Very large
B.	Zero
C.	Small
D.	None of the above
Answer» B. Zero

Discussion

155.	The current IB is ___________
A.	electron current
B.	hole current
C.	donor ion current
D.	acceptor ion current
Answer» B. hole current

Discussion

156.	At the base emitter junctions of a transistor, one finds ___________
A.	a reverse bias
B.	a wide depletion layer
C.	low resistance
D.	none of the above
Answer» D. none of the above

Discussion

157.	In a parallel LC circuit, if the input signal frequency is increased above resonant frequency then ___________
A.	XL increases and XC decreases
B.	XL decreases and XC increases
C.	Both XL and XC increase
D.	Both XL and XC decrease
Answer» B. XL decreases and XC increases

Discussion

158.	The operating point ___________ on the a.c. load line
A.	Also line
B.	Does not lie
C.	May or may not lie
D.	Data insufficient
Answer» B. Does not lie

Discussion

159.	In the design of a biasing circuit, the value of collector load RC is determined by ___________
A.	VCE consideration
B.	VBE consideration
C.	IB consideration
D.	None of the above
Answer» B. VBE consideration

Discussion

160.	The operating point is also called the ___________
A.	Cut off point
B.	Quiescent point
C.	Saturation point
D.	None of the above
Answer» C. Saturation point

Discussion

161.	For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than
A.	10 IB
B.	3 IB
C.	2 IB
D.	4 IB
Answer» B. 3 IB

Discussion

162.	In a base resistor method, if the value of ß changes by 50, then collector current will change by a factor
A.	25
B.	50
C.	100
D.	200
Answer» C. 100

Discussion

163.	For germanium transistor amplifier, VCE should ___________ for faithful amplification
A.	Be zero
B.	Be 0.2 V
C.	Not fall below 0.7 V
D.	None of the above
Answer» D. None of the above

Discussion

164.	A heat sink is generally used with a transistor to ___________
A.	increase the forward current
B.	decrease the forward current
C.	compensate for excessive doping
D.	prevent excessive temperature rise
Answer» E.

Discussion

165.	The most commonly used semiconductor in the manufacture of a transistor is ___________
A.	germanium
B.	silicon
C.	carbon
D.	none of the above
Answer» C. carbon

Discussion

166.	The output impedance of a transistor is ___________
A.	high
B.	zero
C.	low
D.	very low
Answer» B. zero

Discussion

167.	The value of a of a transistor is ___________
A.	more than 1
B.	less than 1
C.	1
D.	none of the above
Answer» C. 1

Discussion

168.	The Q of a tuned amplifier is generally ___________
A.	Less than 5
B.	Less than 10
C.	More than 10
D.	None of the above
Answer» D. None of the above

Discussion

169.	In a transistor if ß = 100 and collector current is 10 mA, then IE is ___________
A.	100 mA
B.	100.1 mA
C.	110 mA
D.	none of the above
Answer» C. 110 mA

Discussion

170.	The voltage gain in a transistor connected in ___________ arrangement is the highest
A.	common base
B.	common collector
C.	common emitter
D.	none of the above
Answer» D. none of the above

Discussion

171.	The power gain in a transistor connected in ___________ arrangement is the highest
A.	common emitter
B.	common base
C.	common collector
D.	none of the above
Answer» B. common base

Discussion

172.	The output impedance of a transistor connected in ___________ arrangement is the highest
A.	common emitter
B.	common collector
C.	common base
D.	none of the above
Answer» D. none of the above

Discussion

173.	The input impedance of a transistor is ___________
A.	high
B.	low
C.	very high
D.	almost zero
Answer» C. very high

Discussion

174.	The element that has the biggest size in a transistor is ___________
A.	collector
B.	base
C.	emitter
D.	collector-base-junction
Answer» B. base

Discussion

175.	The number of depletion layers in a transistor is ___________
A.	four
B.	three
C.	one
D.	two
Answer» E.

Discussion

176.	In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ?
A.	2000 Ω
B.	1400 Ω
C.	800 Ω
D.	1600 Ω
Answer» D. 1600 Ω

Discussion

177.	The base resistor method is generally used in
A.	Amplifier circuits
B.	Switching circuits
C.	Rectifier circuits
D.	None of the above
Answer» C. Rectifier circuits

Discussion

178.	The emitter of a transistor is ___________ doped
A.	lightly
B.	heavily
C.	moderately
D.	none of the above
Answer» C. moderately

Discussion

179.	The collector of a transistor is ___________ doped
A.	heavily
B.	moderately
C.	lightly
D.	none of the above
Answer» C. lightly

Discussion

180.	The base of a transistor is ___________ doped
A.	heavily
B.	moderately
C.	lightly
D.	none of the above
Answer» D. none of the above

Discussion

181.	In a pnp transistor, the current carriers are ___________
A.	acceptor ions
B.	donor ions
C.	free electrons
D.	holes
Answer» E.

Discussion

182.	ICEO = () ICBO
A.	ß
B.	1 + a
C.	1 + ß
D.	none of the above
Answer» D. none of the above

Discussion

183.	In a npn transistor, ___________ are the minority carriers
A.	free electrons
B.	holes
C.	donor ions
D.	acceptor ions
Answer» C. donor ions

Discussion

184.	A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB?
A.	105 kΩ
B.	530 kΩ
C.	315 kΩ
D.	None of the above
Answer» C. 315 kΩ

Discussion

185.	The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by ___________
A.	100 µA
B.	25 µA
C.	20 µA
D.	50 µA
Answer» E.

Discussion

186.	Tuned class C amplifiers are used for RF signals of ___________
A.	Low power
B.	High power
C.	Very high power
D.	None of the above
Answer» E.

Discussion

187.	The Q of an LC circuit is given by ___________
A.	2pfr x R
B.	R / 2pfrL
C.	2pfrL / R
D.	R2/2pfrL
Answer» D. R2/2pfrL

Discussion

188.	The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor
A.	One hundredth
B.	One tenth
C.	One thousandth
D.	One millionth
Answer» D. One millionth

Discussion

189.	For proper amplification by a transistor circuit, the operating point should be located at the ___________ of the d.c. load line
A.	The end point
B.	Middle
C.	The maximum current point
D.	None of the above
Answer» C. The maximum current point

Discussion

190.	The purpose of resistance in the emitter circuit of a transistor amplifier is to ___________
A.	Limit the maximum emitter current
B.	Provide base-emitter bias
C.	Limit the change in emitter current
D.	None of the above
Answer» D. None of the above

Discussion

191.	If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ___________
A.	6 mA
B.	2 mA
C.	3 mA
D.	1 mA
Answer» D. 1 mA

Discussion

192.	The value of ß for a transistor is generally ___________
A.	1
B.	less than 1
C.	between 20 and 500
D.	above 500
Answer» D. above 500

Discussion

193.	In a certain CS JFET amplifier, RD= 1kΩ , RS= 560Ω , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ___________
A.	450
B.	45
C.	2.52
D.	4.5
Answer» E.

Discussion

194.	In a certain common source D-MOSFET amplifier, Vds =3.2 V r.m. and Vgs = 280 mV r.m.s. The voltage gain is ___________
A.	1
B.	11.4
C.	8.75
D.	3.2
Answer» C. 8.75

Discussion

195.	If the cross-sectional area of the channel in n-channel JEFT increases, the drain current ___________
A.	is increased
B.	is decreased
C.	remains the same
D.	none of the above
Answer» B. is decreased

Discussion

196.	If the gate of a JFET is made less negative, the width of the conducting channel ___________
A.	remains the same
B.	is decreased
C.	is increased
D.	none of the above
Answer» D. none of the above

Discussion

197.	If the reverse bias on the gate of a JFET is increased, then width of the conducting channel ___________
A.	is decreased
B.	is increased
C.	remains the same
D.	none of the above
Answer» B. is increased

Discussion

198.	If the value of collector current IC increases, then the value of VCE ___________
A.	Remains the same
B.	Decreases
C.	Increases
D.	None of the above
Answer» C. Increases

Discussion

199.	The value of VBE ___________
A.	Depends upon IC to moderate extent
B.	Is almost independent of IC
C.	Is strongly dependant on IC
D.	None of the above
Answer» C. Is strongly dependant on IC

Discussion

200.	Transistor biasing is generally provided by a ___________
A.	Biasing circuit
B.	Bias battery
C.	Diode
D.	None of the above
Answer» B. Bias battery

Discussion

Explore topic-wise MCQs in Electronics.

Operating point represents ___________

The circuit that provides the best stabilization of operating point is ___________

The Q of a tuned circuit refers to the property of ___________

At parallel resonance, the ratio L/C is ___________

The current IB is ___________

At the base emitter junctions of a transistor, one finds ___________

In a parallel LC circuit, if the input signal frequency is increased above resonant frequency then ___________

The operating point ___________ on the a.c. load line

In the design of a biasing circuit, the value of collector load RC is determined by ___________

The operating point is also called the ___________

For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than

In a base resistor method, if the value of ß changes by 50, then collector current will change by a factor

For germanium transistor amplifier, VCE should ___________ for faithful amplification

A heat sink is generally used with a transistor to ___________

The most commonly used semiconductor in the manufacture of a transistor is ___________

The output impedance of a transistor is ___________

The value of a of a transistor is ___________

The Q of a tuned amplifier is generally ___________

In a transistor if ß = 100 and collector current is 10 mA, then IE is ___________

The voltage gain in a transistor connected in ___________ arrangement is the highest

The power gain in a transistor connected in ___________ arrangement is the highest

The output impedance of a transistor connected in ___________ arrangement is the highest

The input impedance of a transistor is ___________

The element that has the biggest size in a transistor is ___________

The number of depletion layers in a transistor is ___________

In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ?

The base resistor method is generally used in

The emitter of a transistor is ___________ doped

The collector of a transistor is ___________ doped

The base of a transistor is ___________ doped

In a pnp transistor, the current carriers are ___________

ICEO = () ICBO

In a npn transistor, ___________ are the minority carriers

A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB?

The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by ___________

Tuned class C amplifiers are used for RF signals of ___________

The Q of an LC circuit is given by ___________

The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor

For proper amplification by a transistor circuit, the operating point should be located at the ___________ of the d.c. load line

The purpose of resistance in the emitter circuit of a transistor amplifier is to ___________

If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ___________

The value of ß for a transistor is generally ___________

In a certain CS JFET amplifier, RD= 1kΩ , RS= 560Ω , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ___________

In a certain common source D-MOSFET amplifier, Vds =3.2 V r.m. and Vgs = 280 mV r.m.s. The voltage gain is ___________

If the cross-sectional area of the channel in n-channel JEFT increases, the drain current ___________

If the gate of a JFET is made less negative, the width of the conducting channel ___________

If the reverse bias on the gate of a JFET is increased, then width of the conducting channel ___________

If the value of collector current IC increases, then the value of VCE ___________

The value of VBE ___________

Transistor biasing is generally provided by a ___________