MCQOPTIONS
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MCQOPTIONS
This section includes 303 Mcqs, each offering curated multiple-choice questions to sharpen your Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The arrow on the schematic symbol for a MOSFET indicates the channel material type. |
| A. | True |
| B. | False |
| Answer» C. | |
| 2. |
When biased as a variable resistor, JFET resistance (RDS) increases as VGS becomes more negative. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 3. |
An E-MOSFET can be operated with either positive or negative values of VGS. |
| A. | True |
| B. | False |
| Answer» C. | |
| 4. |
The MOSFET has no pn junction. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 5. |
One advantage of a JFET over the BJT is its high input resistance. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 6. |
The E-MOSFET has no physical channel. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 7. |
The Q-point in a JFET with voltage-divider bias is more stable than in a self-biased JFET. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 8. |
It is not necessary to exercise any particular care in handling a MOSFET. |
| A. | True |
| B. | False |
| Answer» C. | |
| 9. |
A VMOS device can handle higher power and voltage than a conventional MOSFET. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 10. |
The JFET operates with a reverse-biased pn junction (gate-to source). |
| A. | True |
| B. | False |
| Answer» B. False | |
| 11. |
The three FET terminals are called source, base, and drain. |
| A. | True |
| B. | False |
| Answer» C. | |
| 12. |
If VD is less than expected (normal) for a self-biased JFET circuit, then it could be caused by a(n) |
| A. | open RG. |
| B. | open gate lead. |
| C. | FET internally open at gate. |
| D. | all of the above |
| Answer» E. | |
| 13. |
In a self-biased JFET circuit, if VD = VDD then ID = ________. |
| A. | 0 |
| B. | cannot be determined from information above |
| Answer» B. cannot be determined from information above | |
| 14. |
Midpoint bias for a D-MOSFET is ID = ________, obtained by setting VGS = 0. |
| A. | IDSS / 2 |
| B. | IDSS / 3.4 |
| C. | IDSS |
| Answer» D. | |
| 15. |
What three areas are the drain characteristics of a JFET (VGS = 0) divided into? |
| A. | ohmic, constant-current, breakdown |
| B. | pinch-off, constant-current, avalanche |
| C. | ohmic, constant-voltage, breakdown |
| Answer» B. pinch-off, constant-current, avalanche | |
| 16. |
Refer to figure given below. Calculate the value of VDS. |
| A. | 0 V |
| B. | 2 V |
| C. | 4 V |
| D. | –2 V |
| Answer» C. 4 V | |
| 17. |
The JFET is always operated with the gate-source pn junction ________ -biased. |
| A. | forward |
| B. | reverse |
| Answer» C. | |
| 18. |
Refer to figure shown below. What is the value of IG? |
| A. | 6 mA |
| B. | 4 mA |
| C. | 2 mA |
| D. | 0 mA |
| Answer» E. | |
| 19. |
Refer to figure given below. Determine the value of VGS. |
| A. | –20 V |
| B. | –8 V |
| C. | –6 V |
| D. | –2 V |
| Answer» D. –2 V | |
| 20. |
A JFET data sheet specifies VGS(off) = –10 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V. |
| A. | 2 mA |
| B. | 1.4 mA |
| C. | 4.8 mA |
| D. | 3.92 mA |
| Answer» E. | |
| 21. |
Refer to figure shown below. Determine the value of VS. |
| A. | 20 V |
| B. | 8 V |
| C. | 6 V |
| D. | 2 V |
| Answer» D. 2 V | |
| 22. |
Refer to figure show below. Calculate the value of VD. |
| A. | 20 V |
| B. | 8 V |
| C. | 6 V |
| D. | 2 V |
| Answer» C. 6 V | |
| 23. |
A JFET data sheet specifies VGS(off) = –6 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V. |
| A. | 2 mA |
| B. | 4 mA |
| C. | 8 mA |
| D. | none of the above |
| Answer» B. 4 mA | |
| 24. |
Identify the p-channel D-MOSFET. |
| A. | a |
| B. | b |
| C. | c |
| D. | d |
| Answer» C. c | |
| 25. |
Identify the n-channel D-MOSFET. |
| A. | a |
| B. | b |
| C. | c |
| D. | d |
| Answer» B. b | |
| 26. |
Refer to the given figure. ID = 6 mA. Calculate the value of VDS. |
| A. | –6 V |
| B. | 6 V |
| C. | 12 V |
| D. | –3 V |
| Answer» C. 12 V | |
| 27. |
Identify the n-channel E-MOSFET. |
| A. | a |
| B. | b |
| C. | c |
| D. | d |
| Answer» D. d | |
| 28. |
Identify the p-channel E-MOSFET. |
| A. | a |
| B. | b |
| C. | c |
| D. | d |
| Answer» E. | |
| 29. |
A self-biased n-channel JFET has a VD = 6 V. VGS = –3 V. Find the value of VDS. |
| A. | –3 V |
| B. | –6 V |
| C. | 3 V |
| D. | 6 V |
| Answer» D. 6 V | |
| 30. |
The value of VGS that makes ID approximately zero is the |
| A. | pinch-off voltage. |
| B. | cutoff voltage. |
| C. | breakdown voltage. |
| D. | ohmic voltage. |
| Answer» C. breakdown voltage. | |
| 31. |
For a JFET, the value of VDS at which ID becomes essentially constant is the |
| A. | pinch-off voltage. |
| B. | cutoff voltage. |
| C. | breakdown voltage. |
| D. | ohmic voltage. |
| Answer» B. cutoff voltage. | |
| 32. |
On the drain characteristic curve of a JFET for VGS = 0, the pinch-off voltage is |
| A. | below the ohmic area. |
| B. | between the ohmic area and the constant current area. |
| C. | between the constant current area and the breakdown region. |
| D. | above the breakdown region. |
| Answer» C. between the constant current area and the breakdown region. | |
| 33. |
Directions: It consists of two statements, one labelled as the ‘Statement (I)’ and the other as ‘Statement (II)’. You are to examine these two statements carefully and select the answer using the codes given below:Statement (I): MOSFETs are intrinsically faster than bipolar device.Statement (II): MOSFETs have excess minority carrier. |
| A. | Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I) |
| B. | Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I) |
| C. | Statement (I) is true but Statement (II) is false |
| D. | Statement (I) is false but Statement (II) is true |
| Answer» D. Statement (I) is false but Statement (II) is true | |
| 34. |
In a Common Drain (CD) MOSFET amplifier with voltage divider bias with R1 and R2 equal to 1.5 MΩ and 1 MΩ respectively, the input impedance Zf is: |
| A. | 220 kΩ |
| B. | 600 kΩ |
| C. | 470 kΩ |
| D. | 200 kΩ |
| Answer» C. 470 kΩ | |
| 35. |
In a PNP Transistor voltage divider biasing ____ resistors are used: |
| A. | one |
| B. | four |
| C. | three |
| D. | two |
| Answer» C. three | |
| 36. |
For n-channel MOSFET Vth is 6V, If VGS = 2 V, what is the value of VDS at which it will enter saturation? |
| A. | -6 V |
| B. | -4 V |
| C. | +6 V |
| D. | +4 V |
| Answer» C. +6 V | |
| 37. |
A change in the value of the emitter resistance RE in a differential amplifier |
| A. | Affects the difference mode gain, Ad |
| B. | Affects the common mode gain, Ac |
| C. | Affects both Ad and Ac |
| D. | Does not affect either Ad or Ac |
| Answer» C. Affects both Ad and Ac | |
| 38. |
A depletion-type MOSFET can be operated in an enhancement mode where negative charges are induced into an n-type channel by applying |
| A. | Positive Gate Voltage |
| B. | Negative Gate Voltage |
| C. | Positive Drain Voltage |
| D. | Negative Drain Voltage |
| Answer» B. Negative Gate Voltage | |
| 39. |
In a transistor, the base current is about _______ of emitter current. |
| A. | 25% |
| B. | 20% |
| C. | 35% |
| D. | 5% |
| Answer» E. | |
| 40. |
A common-source amplifier with a drain resistance, RD = 4.7 kΩ is powered using a 10 V power supply. Assuming that the transconductance, gm, is 520 μA/V, the voltage gain of the amplifier is closest to: |
| A. | -2.44 |
| B. | -1.22 |
| C. | 1.22 |
| D. | 2.44 |
| Answer» B. -1.22 | |
| 41. |
Input and output quantities in Field Effect Transistor (FET) are non-linearly related due to squared term in _________. |
| A. | John Bardeen equation |
| B. | Thevenin's theorem |
| C. | Shockley's equation |
| D. | Kirchhoff's Current Law |
| Answer» D. Kirchhoff's Current Law | |
| 42. |
Consider the following statements related to JFET:1. Its operation depends on the flow of minority carriers only.2. It is less noisy than BJT.3. It has poor thermal stability.4. It is relatively immune to radiation.The correct statements are |
| A. | 1, 2, 3 and 4 |
| B. | 1 and 2 only |
| C. | 2 and 4 only |
| D. | 3 and 4 only |
| Answer» D. 3 and 4 only | |
| 43. |
For JFET, the drain current ID is |
| A. | \({I_{DSS}}{\left( {1 - \frac{{{V_{GS}}}}{{{V_p}}}} \right)^{\frac{1}{2}}}\) |
| B. | \({I_{DSS}}\left( {1 - \frac{{{V_{GS}}}}{{{V_p}}}} \right)\) |
| C. | \({I_{DSS}}{\left( {1 - \frac{{{V_{GS}}}}{{{V_p}}}} \right)^{\frac{3}{2}}}\) |
| D. | \({I_{DSS}}{\left( {1 - \frac{{{V_{GS}}}}{{{V_p}}}} \right)^2}\) |
| Answer» E. | |
| 44. |
Match the elements of the list given below:List IList IIa) P-N junctiondiode\(\left( i \right)~{{\varphi }_{m}}-\left( x+\frac{{{E}_{g}}}{2}-{{\psi }_{E}} \right)=0\)b) MOSFET\((ii)\frac{z}{L}{{\mu }_{0}}{{C}_{ox}}~\left( {{V}_{G}}-{{V}_{T}} \right){{V}_{D}}\)c) JFET\(\left( iii \right)~I={{I}_{0}}\left( e\frac{qV}{kT}-1 \right)\)d) Ideal MISdiode\(\left( iv \right)~{{I}_{DS}}={{I}_{DSS}}{{\left[ 1-\frac{{{V}_{GS}}}{{{V}_{p}}} \right]}^{2}}\) The correct option is |
| A. | (a) – (iii), (b) - (ii), (c) - (iv), (d) – (i) |
| B. | (a) – (i), (b) - (ii), (c) - (iii), (d) – (iv) |
| C. | (a) – (ii), (b) - (iii), (c) - (iv), (d) – (i) |
| D. | (a) – (iv), (b) - (i), (c) - (ii), (d) – (iii) |
| Answer» B. (a) – (i), (b) - (ii), (c) - (iii), (d) – (iv) | |
| 45. |
For an n-channel JFET, the pinch off voltage Vp is - 4V, VDD is 10 V and the drain saturation current at zero gate bias IDD is 2 mA. The value of the saturated drain current for a gate voltage of -2 V is |
| A. | 0.5 mA |
| B. | 2 mA |
| C. | 4.5 mA |
| D. | 18 mA |
| Answer» B. 2 mA | |
| 46. |
If the output of a CMOS inverter gets accidently shorted to ground |
| A. | the n-channel driver MOSFET will be damaged |
| B. | the supply voltage source will be damaged |
| C. | the current drain for the supply will increase, which may damage the p-channel load MOSFET |
| D. | none of the these will happen |
| Answer» D. none of the these will happen | |
| 47. |
CMOS means |
| A. | Complementary Main Oxide Semiconductor |
| B. | Complementary Metal Oxide Semiconductor |
| C. | Complements Main Oxidation Semiconductor |
| D. | Correlation in metal Oxidized Semiconductor |
| Answer» C. Complements Main Oxidation Semiconductor | |
| 48. |
In FET, the np region between source and gate is: |
| A. | forward biased |
| B. | forward or reverse biased |
| C. | reverse biased |
| D. | unbiased |
| Answer» D. unbiased | |
| 49. |
In the above circuit, ID is |
| A. | \({I_D} = {I_{DSS}}{\left( {1 - \frac{{{V_{GS}}}}{{{V_{GS\left( {off} \right)}}}}} \right)^2}\) |
| B. | \({I_D} = {I_{DSS}}\left( {1 - \frac{{{V_{GS}}}}{{{V_{GS\left( {off} \right)}}}}} \right)\) |
| C. | \({I_D} = {I_{DSS}}\left( {1 - \frac{{{V_{GS}}}}{{{V_{DS\left( {off} \right)}}}}} \right)\) |
| D. | \({I_D} = {I_{DSS}}{\left( {1 - \frac{{{V_{GS}}}}{{{V_{DS\left( {off} \right)}}}}} \right)^2}\) |
| Answer» B. \({I_D} = {I_{DSS}}\left( {1 - \frac{{{V_{GS}}}}{{{V_{GS\left( {off} \right)}}}}} \right)\) | |
| 50. |
Directions: Each of the next items consists of two statements, one labeled as the `Assertion (A)' and the other as 'Reason (R)' You are to examine these two statements carefully and select the answers to these items using the codes given below :Assertion (A): Thermal runaway occurs in FET circuits but it does not occur in BJT circuits.Reason (R): FET is a majority carrier device whereas BJT works based on the movement of both the majority and the minority carriers. |
| A. | Both A and R are individually true and R is the correct explanation of A |
| B. | Both A and R are individually true but R is not the correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» E. | |