MCQOPTIONS
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MCQOPTIONS
This section includes 6 Mcqs, each offering curated multiple-choice questions to sharpen your Microwave Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The curve of IDS v/s VDS of an FET does not vary with the gate to source voltage applied. |
| A. | true |
| B. | false |
| Answer» C. | |
| 2. |
The scattering parameter S11 for an FET __________ with increase in the frequency of operation of the transistor. |
| A. | increases |
| B. | decreases |
| C. | remains constant |
| D. | none of the mentioned |
| Answer» C. remains constant | |
| 3. |
The upper threshold frequency of an FET, where short circuit gain is unity is given by: |
| A. | g<sub>m</sub>/2 C<sub>gs</sub> |
| B. | g<sub>m</sub>/C<sub>gs</sub> |
| C. | g<sub>m</sub>/ 2 |
| D. | none of the mentioned |
| Answer» B. g<sub>m</sub>/C<sub>gs</sub> | |
| 4. |
The expression for short circuit current gain of an FET is given by: |
| A. | g<sub>m</sub>/ C<sub>gs</sub> |
| B. | I<sub>g</sub>/g<sub>m</sub>V<sub>c</sub> |
| C. | C<sub>gs</sub>/ g<sub>m</sub> |
| D. | none of the mentioned |
| Answer» B. I<sub>g</sub>/g<sub>m</sub>V<sub>c</sub> | |
| 5. |
GaAs MESFET metal semiconductor field effect transistor are one of the widely used categories of FETs. |
| A. | true |
| B. | false |
| Answer» B. false | |
| 6. |
Field effect transistors are different from BJTs in that they are _________ |
| A. | monopolar devices |
| B. | bipolar devices |
| C. | bidirectional device |
| D. | none of the mentioned |
| Answer» B. bipolar devices | |