MCQOPTIONS
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MCQOPTIONS
This section includes 19 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communication knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
What is usually required by FETs to optimize the figure of merit? |
| A. | Attenuation of barrier |
| B. | Matching with the depletion region |
| C. | Dispersion of the gate region |
| D. | Matching with the detector |
| Answer» E. | |
| 2. |
A silicon p-i-n photodiode utilized with the amplifier and the receiver is designed to accept data at a rate of ___________ |
| A. | 276Mbits-1 |
| B. | 274 Mbits-1 |
| C. | 278Mbits-1 |
| D. | 302Mbits-1 |
| Answer» C. 278Mbits-1 | |
| 3. |
Which receiver can be fabricated using PIN-FET hybrid approach? |
| A. | Trans-impedance front end receiver |
| B. | Gallium arsenide receiver |
| C. | High-impedance front-end |
| D. | Low-impedance front-end |
| Answer» B. Gallium arsenide receiver | |
| 4. |
It is difficult to achieve higher transmission rates using conventional __________ |
| A. | Voltage amplifier |
| B. | Waveguide Structures |
| C. | PIN-FET or APD receivers |
| D. | MESFET |
| Answer» D. MESFET | |
| 5. |
PIN-FET hybrid receiver is designed for use at a transmission rate of _____________ |
| A. | 130 Mbits-1 |
| B. | 110 Mbits-1 |
| C. | 120 Mbits-1 |
| D. | 140 Mbits-1 |
| Answer» E. | |
| 6. |
The PIN-FET hybrid receivers are a combination of ______________ |
| A. | Hybrid resistances and capacitances |
| B. | Pin photodiode and low noise amplifier (GaAs MESFETs) |
| C. | P-N photodiode and low noise amplifier (GaAs MESFETs) |
| D. | Attenuator and low noise amplifier (GaAs MESFETs) |
| Answer» C. P-N photodiode and low noise amplifier (GaAs MESFETs) | |
| 7. |
Gallium arsenide MESFETs are advantageous than Silicon FETs. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 8. |
The properties of a bipolar transistor are superior to the FET. |
| A. | True |
| B. | False |
| Answer» C. | |
| 9. |
IT_IS_DIFFICULT_TO_ACHIEVE_HIGHER_TRANSMISSION_RATES_USING_CONVENTIONAL___________?$ |
| A. | Voltage amplifier |
| B. | Waveguide Structures |
| C. | PIN-FET or APD receivers |
| D. | MESFET |
| Answer» D. MESFET | |
| 10. |
A silicon p-i-n photodiode utilized with the amplifier and the receiver is designed to accept data at a rate of ___________$ |
| A. | 276Mbits<sup>-1</sup> |
| B. | 274 Mbits<sup>-1</sup> |
| C. | 278Mbits<sup>-1</sup> |
| D. | 302Mbits<sup>-1</sup> |
| Answer» C. 278Mbits<sup>-1</sup> | |
| 11. |
Which_receiver_can_be_fabricated_using_PIN-FET_hybrid_approach?$ |
| A. | Trans-impedance front end receiver |
| B. | Gallium arsenide receiver |
| C. | High-impedance front-end |
| D. | Low-impedance front-end |
| Answer» B. Gallium arsenide receiver | |
| 12. |
PIN-FET hybrid receiver is designed for use at a transmission rate of ? |
| A. | 130Mbits<sup>-1</sup> |
| B. | 110Mbits<sup>-1</sup> |
| C. | 120Mbits<sup>-1</sup> |
| D. | 140Mbits<sup>-1</sup> |
| Answer» E. | |
| 13. |
The PIN-FET hybrid receivers are a combination of : |
| A. | Hybrid resistances and capacitances |
| B. | Pin photodiode and low noise amplifier (GaAs MESFETs) |
| C. | P-N photodiode and low noise amplifier (GaAs MESFETs) |
| D. | Attenuator and low noise amplifier (GaAs MESFETs) |
| Answer» C. P-N photodiode and low noise amplifier (GaAs MESFETs) | |
| 14. |
Gallium arsenide MESFETs are advantageous than Silicon FETs. State whether the given statement is true or false. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 15. |
High-performance microwave FETs are fabricated from ___________ |
| A. | Silicon |
| B. | Germanium |
| C. | Gallium arsenide |
| D. | Zinc |
| Answer» D. Zinc | |
| 16. |
Bipolar transistor is more useful amplifying device than FET at frequencies _____________ |
| A. | Above 1000 MHz |
| B. | Equal to 1 MHz |
| C. | Below 25 MHz |
| D. | Above 25 MHz |
| Answer» E. | |
| 17. |
The properties of a bipolar transistor are superior to the FET. State whether the given statement is true or false. |
| A. | True |
| B. | False |
| Answer» C. | |
| 18. |
FET device has extremely high input impedance greater than _________ |
| A. | 10<sup>7</sup>Ohms and less than 10<sup>8</sup> |
| B. | 10<sup>6</sup>Ohms and less than 10<sup>7</sup> |
| C. | 10<sup>14</sup>Ohms |
| D. | 10<sup>23</sup>Ohms |
| Answer» D. 10<sup>23</sup>Ohms | |
| 19. |
____________ is the lowest noise amplifier device. |
| A. | Silicon FET |
| B. | Amplifier-A |
| C. | Attenuator |
| D. | Resonator-B |
| Answer» B. Amplifier-A | |