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				This section includes 23 Mcqs, each offering curated multiple-choice questions to sharpen your Digital Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. | When a RAM module passes the checker board test it is ______________ | 
| A. | Able to read and write only 0s | 
| B. | Faulty | 
| C. | Probably good | 
| D. | Able to read and write only 1s | 
| Answer» D. Able to read and write only 1s | |
| 2. | Suppose that a certain semiconductor memory chip has a capacity of 8K × 8. How many bytes could be stored in this device? | 
| A. | 8,000 | 
| B. | 65,536 | 
| C. | 8,192 | 
| D. | 64,000 | 
| Answer» D. 64,000 | |
| 3. | ROMs retain data when ______________ | 
| A. | Power is on | 
| B. | Power is off | 
| C. | System is down | 
| D. | All of the Mentioned | 
| Answer» E. | |
| 4. | To read from the memory, the select input and the power down/program input must be ______________ | 
| A. | HIGH | 
| B. | LOW | 
| C. | Sometimes HIGH and sometimes LOW | 
| D. | Alternate HIGH and LOW | 
| Answer» C. Sometimes HIGH and sometimes LOW | |
| 5. | To store 0 in such a cell, the floating point must be ______________ | 
| A. | Reprogrammed | 
| B. | Restarted | 
| C. | Charged | 
| D. | Power off | 
| Answer» D. Power off | |
| 6. | The initial values in all the cells of an EPROM is ______________ | 
| A. | 0 | 
| B. | 1 | 
| C. | Both 0 and 1 | 
| D. | Alternate 0s and 1s | 
| Answer» C. Both 0 and 1 | |
| 7. | The check sum method of testing a ROM ______________ | 
| A. | Allows data errors to be pinpointed to a specific memory location | 
| B. | Provides a means for locating and correcting data errors in specific memory locations | 
| C. | Indicates if the data in more than one memory location is incorrect | 
| D. | Simply indicates that the contents of the ROM are incorrect | 
| Answer» E. | |
| 8. | Address decoding for dynamic memory chip control may also be used for ______________ | 
| A. | Chip selection and address location | 
| B. | Read and write control | 
| C. | Controlling refresh circuits | 
| D. | Memory mapping | 
| Answer» B. Read and write control | |
| 9. | The EPROM was invented by ______________ | 
| A. | Wen Tsing Chow | 
| B. | Dov Frohman | 
| C. | Luis O Brian | 
| D. | J P Longwell | 
| Answer» C. Luis O Brian | |
| 10. | EPROM uses an array of _______________ | 
| A. | p-channel enhancement type MOSFET | 
| B. | n-channel enhancement type MOSFET | 
| C. | p-channel depletion type MOSFET | 
| D. | n-channel depletion type MOSFET | 
| Answer» C. p-channel depletion type MOSFET | |
| 11. | WHICH_ONE_OF_THE_FOLLOWING_IS_USED_FOR_THE_FABRICATION_OF_MOS_EPROM??$ | 
| A. | TMS 2513 | 
| B. | TMS 2515 | 
| C. | TMS 2516 | 
| D. | TMS 2518 | 
| Answer» D. TMS 2518 | |
| 12. | To read from the memory, the select input and the power down/program input must be$ | 
| A. | HIGH | 
| B. | LOW | 
| C. | Sometimes HIGH and sometimes LOW | 
| D. | None of the Mentioned | 
| Answer» C. Sometimes HIGH and sometimes LOW | |
| 13. | How_many_addresses_a_MOS_EPROM_have?$ | 
| A. | 1024 | 
| B. | 512 | 
| C. | 2516 | 
| D. | 256 | 
| Answer» D. 256 | |
| 14. | When a RAM module passes the checker board test it is | 
| A. | Able to read and write only 0s | 
| B. | Faulty | 
| C. | Probably good | 
| D. | Able to read and write only 1s | 
| Answer» D. Able to read and write only 1s | |
| 15. | Suppose that a certain semiconductor memory chip has a capacity of 8K √ó 8. How many bytes could be stored in this device?$ | 
| A. | 8,000 | 
| B. | 65,536 | 
| C. | 8,192 | 
| D. | 64,000 | 
| Answer» D. 64,000 | |
| 16. | ROMs_retain_data_when | 
| A. | Power is on | 
| B. | Power is off | 
| C. | System is down | 
| D. | All of the Mentioned | 
| Answer» E. | |
| 17. | The major disadvantage of RAM is? | 
| A. | Its access speed is too slow | 
| B. | Its matrix size is too big | 
| C. | It is volatile | 
| D. | High power consumption | 
| Answer» D. High power consumption | |
| 18. | To store 0 in such a cell, the floating point must be | 
| A. | Reprogrammed | 
| B. | Restarted | 
| C. | Charged | 
| D. | Power off | 
| Answer» D. Power off | |
| 19. | The initial values in all the cells of an EPROM is | 
| A. | 0 | 
| B. | 1 | 
| C. | Both 0 and 1 | 
| D. | None of the Mentioned | 
| Answer» C. Both 0 and 1 | |
| 20. | The check sum method of testing a ROM | 
| A. | Allows data errors to be pinpointed to a specific memory location | 
| B. | Provides a means for locating and correcting data errors in specific memory locations | 
| C. | Indicates if the data in more than one memory location is incorrect | 
| D. | Simply indicates that the contents of the ROM are incorrect | 
| Answer» E. | |
| 21. | Address decoding for dynamic memory chip control may also be used for | 
| A. | Chip selection and address location | 
| B. | Read and write control | 
| C. | Controlling refresh circuits | 
| D. | Memory mapping | 
| Answer» B. Read and write control | |
| 22. | The EPROM was invented by | 
| A. | Wen Tsing Chow | 
| B. | Dov Frohman | 
| C. | Luis O Brian | 
| D. | J P Longwell | 
| Answer» C. Luis O Brian | |
| 23. | EPROM uses an array of | 
| A. | p-channel enhancement type MOSFET | 
| B. | n-channel enhancement type MOSFET | 
| C. | p-channel depletion type MOSFET | 
| D. | n-channel depletion type MOSFET | 
| Answer» C. p-channel depletion type MOSFET | |