An inverter circuit is used to convert:

Low frequency to high frequency

High frequency to low frequency

In the voltage amplifier ________.

Output voltage is lower than the input voltage.

Output voltage is equal to the input voltage.

Output voltage is larger than the input voltage.

A parametric amplifier is to be cooled:

As it cannot be used at room temperature

In this circuit, the magnitude of the output voltage Vo is:

\(V_0 = V_T \ln \frac {V_i}{R_sI_S}\)

Epitaxial growth is used in ICs

because it produces low parasitic capacitance

because it yields back to back isolating pn Junction

to grow single crystal n doped silicon on a single crystal P-type substrate

to grow Selectivity single crystal P doped silicon of one resistivity on a P type substrate of a different resistivity

Assertion (A): In a BJT base current is very small.Reason (R): In a BJT recombination in base region is high.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not a correct explanation of A

What is the effect of cut in voltage on the wave form of output as compared to input in a semiconductor diode?

The duration of output waveform is less than 180°

Output voltage is less than input voltage

Output voltage is more than input voltage

Assertion (A): When Diode used as rectifier the reverse breakdown voltage should not be exceeded.Reason (R): A high inverse voltage can destroy a p-n junction.

Both A and R are true but R is not a correct explanation of A

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not a correct explanation of A

In n type semiconductor, the free electron concentration

is much greater than density of donor atoms

is nearly equal to density of donor atoms

is much greater than density of donor atoms

is much less than density of donor atoms

may be equal to or more or less than density of donor atoms

Assertion (A): In CE connection of n-p-n transistor. VCE is positive. Reason (R): In BJT, the base collector junction is reverse biased.

Both A and R are true but R is not a correct explanation of A

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not a correct explanation of A

Photo electric emission can occur only if

frequency of incident radiation is less than threshold frequency

wave length of incident radiation is equal to threshold value

wave length of incident radiation is less than threshold value

frequency of incident radiation is less than threshold frequency

The output characteristics of a bipolar transistor has three distinct regions. They are known as

inactive region, active region and breakdown region

saturation region, active region and breakdown region

inactive region, active region and breakdown region

inactive region, saturation region and active region

inactive region, saturation region and breakdown region

Assertion (A): When light falls at junction of p-n photodiode, its p side becomes positive and n side becomes negative.Reason (R): When a photodiode is short circuited, the current in the external circuit flows from p side to n side.

Both A and R are true but R is not a correct explanation of A

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not a correct explanation of A

The turn on time of an SCR is 5 micro second. Its trigger pulse should have

long rise time with pulse width = 4 μs

short rise time with pulse width = 2.5 μs

long rise time with pulse width = 3 μs

short rise time with pulse width = 4 μs

long rise time with pulse width = 4 μs

Assertion (A): The amount of photoelectric emission depends on the intensity of incident light.Reason (R): Photo electric emission can occur only if frequency of incident light is less than threshold frequency.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not a correct explanation of A

869 + Mcqs in Electronic Devices in BITSAT Page 2 McqOptions

51.	In the motor generator set, the type of AC motor used is _______
A.	Squirrel cage induction motor
B.	Wound rotor induction motor
C.	AC commutator motor
D.	Synchronous motor
Answer» E.

Discussion

52.	A particular amplifier circuit used for frequency doubling is.
A.	Push-push
B.	Push-pull
C.	Pull-push
D.	Pull-pull
Answer» B. Push-pull

Discussion

53.	________ makes LEDs radiate red or yellow light.
A.	Gallium arsenide phosphide
B.	Gallium phosphide
C.	Gallium
D.	Gallium arsenide
Answer» B. Gallium phosphide

Discussion

54.	Empire tape is usually made of ______.
A.	Vulcanized Rubber
B.	calico cloth
C.	impregnated paper
D.	varnished cambric
Answer» E.

Discussion

55.	A typical solvent used for cleaning of Electronic assemblies is
A.	Iso Propyl Alcohol
B.	Petrol
C.	Carbonated Water
D.	Liquid nitrogen
Answer» B. Petrol

Discussion

56.	Output voltage V0 of the circuit shown in figure below. (The input voltages are V1 = 2.5 V & V2 = 1 V)
A.	4.0 V
B.	-4.0 V
C.	-4.5 V
D.	4.5 V
Answer» D. 4.5 V

Discussion

57.	In an FET, when drain voltage equals the pinch-off voltage, then drain current ______ with the increase in drain voltage
A.	decreases
B.	increases
C.	remains constant
D.	none of the above
Answer» D. none of the above

Discussion

58.	For Gunn diodes, semiconductor material preferred is
A.	Silicon
B.	Germanium
C.	Gallium Arsenide
D.	All of these
Answer» D. All of these

Discussion

59.	LED is a
A.	p-n diode
B.	Thermistor
C.	Gate
D.	Transistor
Answer» B. Thermistor

Discussion

60.	If a regulator IC provides a voltage higher than input, then the converter is knows as ___.
A.	Boost
B.	Buck
C.	Buffer
D.	Buck Boost
Answer» B. Buck

Discussion

61.	In LC transistor oscillator, the active component used is:
A.	Inductor
B.	Capacitor
C.	Resistor
D.	Transistor
Answer» E.

Discussion

62.	An inverter circuit is used to convert:
A.	D.C. to A.C.
B.	Low frequency to high frequency
C.	A.C. to D.C.
D.	High frequency to low frequency
Answer» B. Low frequency to high frequency

Discussion

63.	Oscillators operate on the principle of
A.	Positive feedback
B.	Negative feedback
C.	Signal feedthrough
D.	Attenuation
Answer» B. Negative feedback

Discussion

64.	Following are the applications of a Buck and Boost Converters respectivelyA. Regulated power supplyB. Regenerative braking of DC motorsC. DC motor speed control
A.	A, B
B.	B, C
C.	A, C
D.	B, A
Answer» B. B, C

Discussion

65.	In the voltage amplifier ________.
A.	Output voltage is zero.
B.	Output voltage is lower than the input voltage.
C.	Output voltage is equal to the input voltage.
D.	Output voltage is larger than the input voltage.
Answer» E.

Discussion

66.	Power transistors with heat sink are fixed by
A.	Welding
B.	Fastening
C.	Bonding
D.	Taping
Answer» C. Bonding

Discussion

67.	A parametric amplifier is to be cooled:
A.	To improve noise performance
B.	To increase bandwidth
C.	To make it suitable for pulses
D.	As it cannot be used at room temperature
Answer» B. To increase bandwidth

Discussion

68.	In this circuit, the magnitude of the output voltage Vo is:
A.	\(V_0 = V_ie^{V_o / V_T}\)
B.	\(V_0 = V_T \ln \frac {V_i}{R_sI_S}\)
C.	V0 = Vi - ICRS
D.	None of these
Answer» C. V0 = Vi - ICRS

Discussion

69.	Duty cycle for repetitive waveform is defined as
A.	ratio of ON time to Total time
B.	sum of ON time and OFF time
C.	ratio of OFF time to ON time
D.	ratio of Total time to ON time
Answer» B. sum of ON time and OFF time

Discussion

70.	As compared to FET, BJT has ________ input impedance and ________ output impedance.
A.	low, low
B.	low, high
C.	high, high
D.	high, low
Answer» C. high, high

Discussion

71.	IC 555 is used for
A.	Regulating voltage
B.	Providing amplification
C.	Filtering
D.	Making oscillator
Answer» E.

Discussion

72.	A forward potential of 10 V is applied to a Si diode. A resistance of 1 KΩ is in series with the diode. The current through the diode is
A.	10 mA
B.	9.3 mA
C.	0.7 mA
D.	0 mA
Answer» C. 0.7 mA

Discussion

73.	The resistivity of intrinsic semiconductor material is about
A.	10⁵ ohm-m
B.	10³ ohm-m
C.	100 ohm-m
D.	1 ohm-m
Answer» E.

Discussion

74.	N-type silicon is obtained by doping silicon with
A.	germanium
B.	aluminium
C.	boron
D.	phosphorus
Answer» E.

Discussion

75.	Work function of oxide coated cathode is much lower than that of tungsten cathode.
A.	True
B.	False
C.	May be True or False
D.	Can't say
Answer» B. False

Discussion

76.	Epitaxial growth is used in ICs
A.	because it produces low parasitic capacitance
B.	because it yields back to back isolating pn Junction
C.	to grow single crystal n doped silicon on a single crystal P-type substrate
D.	to grow Selectivity single crystal P doped silicon of one resistivity on a P type substrate of a different resistivity
Answer» E.

Discussion

77.	Assertion (A): In a BJT base current is very small.Reason (R): In a BJT recombination in base region is high.
A.	Both A and R are true and R is correct explanation of A
B.	Both A and R are true but R is not a correct explanation of A
C.	A is true but R is false
D.	A is false but R is true
Answer» D. A is false but R is true

Discussion

78.	What is the effect of cut in voltage on the wave form of output as compared to input in a semiconductor diode?
A.	The duration of output waveform is less than 180°
B.	Output voltage is less than input voltage
C.	Output voltage is more than input voltage
D.	Both (a) and (b)
Answer» E.

Discussion

79.	Assertion (A): When Diode used as rectifier the reverse breakdown voltage should not be exceeded.Reason (R): A high inverse voltage can destroy a p-n junction.
A.	Both A and R are true and R is correct explanation of A
B.	Both A and R are true but R is not a correct explanation of A
C.	A is true but R is false
D.	A is false but R is true
Answer» B. Both A and R are true but R is not a correct explanation of A

Discussion

80.	For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to about
A.	100 mW
B.	250 mW
C.	450 mW
D.	600 mW
Answer» C. 450 mW

Discussion

81.	In n type semiconductor, the free electron concentration
A.	is nearly equal to density of donor atoms
B.	is much greater than density of donor atoms
C.	is much less than density of donor atoms
D.	may be equal to or more or less than density of donor atoms
Answer» B. is much greater than density of donor atoms

Discussion

82.	Assertion (A): In CE connection of n-p-n transistor. VCE is positive. Reason (R): In BJT, the base collector junction is reverse biased.
A.	Both A and R are true and R is correct explanation of A
B.	Both A and R are true but R is not a correct explanation of A
C.	A is true but R is false
D.	A is false but R is true
Answer» B. Both A and R are true but R is not a correct explanation of A

Discussion

83.	Photo electric emission can occur only if
A.	wave length of incident radiation is equal to threshold value
B.	wave length of incident radiation is less than threshold value
C.	frequency of incident radiation is less than threshold frequency
D.	none of the above
Answer» C. frequency of incident radiation is less than threshold frequency

Discussion

84.	Which of these has highly doped p and n region?
A.	PIN diode
B.	Tunnel diode
C.	Schottky diode
D.	Photodiode
Answer» C. Schottky diode

Discussion

85.	An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is
A.	0 to 200 Ω
B.	200 - 400 Ω
C.	200 Ω and above
D.	400 Ω and above
Answer» E.

Discussion

86.	Fermi level is the maximum energy that an electron can possess at 0 K.
A.	True
B.	False
C.	May be True or False
D.	Can't say
Answer» B. False

Discussion

87.	Reluctivity is analogous to
A.	permeability
B.	conductivity
C.	resistivity
D.	retentivity
Answer» D. retentivity

Discussion

88.	In an intrinsic semiconductor, the intrinsic charge concentration at any absolute temperature T is proportional to
A.	T
B.	T²
C.	T³
D.	T⁴
Answer» D. T⁴

Discussion

89.	The light output of LED varies as (current)ⁿ. The value of n is about
A.	0.5
B.	1
C.	1.3
D.	2.1
Answer» D. 2.1

Discussion

90.	If both the emitter base and the collector base junctions of a bipolar transistor are forward biased, the transistor is in the
A.	active region
B.	saturated region
C.	cut off region
D.	inverse mode
Answer» C. cut off region

Discussion

91.	Hall effect can be used to find the type of semiconductor.
A.	True
B.	False
C.	May be True or False
D.	Can't say
Answer» B. False

Discussion

92.	The current due to thermionic emission is proportional to
A.	T
B.	T²
C.	T³
D.	T⁴
Answer» C. T³

Discussion

93.	The output characteristics of a bipolar transistor has three distinct regions. They are known as
A.	saturation region, active region and breakdown region
B.	inactive region, active region and breakdown region
C.	inactive region, saturation region and active region
D.	inactive region, saturation region and breakdown region
Answer» B. inactive region, active region and breakdown region

Discussion

94.	Assertion (A): When light falls at junction of p-n photodiode, its p side becomes positive and n side becomes negative.Reason (R): When a photodiode is short circuited, the current in the external circuit flows from p side to n side.
A.	Both A and R are true and R is correct explanation of A
B.	Both A and R are true but R is not a correct explanation of A
C.	A is true but R is false
D.	A is false but R is true
Answer» B. Both A and R are true but R is not a correct explanation of A

Discussion

95.	The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification
A.	AB
B.	BC
C.	CD
D.	BD
Answer» C. CD

Discussion

96.	The cut in voltage of a diode is nearly equal to
A.	applied forward voltage
B.	applied reverse voltage
C.	barrier potential
D.	none of the above
Answer» D. none of the above

Discussion

97.	The turn on time of an SCR is 5 micro second. Its trigger pulse should have
A.	short rise time with pulse width = 2.5 μs
B.	long rise time with pulse width = 3 μs
C.	short rise time with pulse width = 4 μs
D.	long rise time with pulse width = 4 μs
Answer» D. long rise time with pulse width = 4 μs

Discussion

98.	Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr) for similar geometry?
A.	NPN germanium transistor
B.	NPN silicon transistor
C.	PNP germanium transistor
D.	PNP silicon transistor
Answer» C. PNP germanium transistor

Discussion

99.	If αac for transistor is 0.98 then βac is equal to
A.	51
B.	49
C.	47
D.	45
Answer» C. 47

Discussion

100.	Assertion (A): The amount of photoelectric emission depends on the intensity of incident light.Reason (R): Photo electric emission can occur only if frequency of incident light is less than threshold frequency.
A.	Both A and R are true and R is correct explanation of A
B.	Both A and R are true but R is not a correct explanation of A
C.	A is true but R is false
D.	A is false but R is true
Answer» D. A is false but R is true

Discussion

Explore topic-wise MCQs in BITSAT.

In the motor generator set, the type of AC motor used is _______

A particular amplifier circuit used for frequency doubling is.

________ makes LEDs radiate red or yellow light.

Empire tape is usually made of ______.

A typical solvent used for cleaning of Electronic assemblies is

Output voltage V0 of the circuit shown in figure below. (The input voltages are V1 = 2.5 V & V2 = 1 V)

In an FET, when drain voltage equals the pinch-off voltage, then drain current ______ with the increase in drain voltage

For Gunn diodes, semiconductor material preferred is

LED is a

If a regulator IC provides a voltage higher than input, then the converter is knows as ___.

In LC transistor oscillator, the active component used is:

An inverter circuit is used to convert:

Oscillators operate on the principle of

Following are the applications of a Buck and Boost Converters respectivelyA. Regulated power supplyB. Regenerative braking of DC motorsC. DC motor speed control

In the voltage amplifier ________.

Power transistors with heat sink are fixed by

A parametric amplifier is to be cooled:

In this circuit, the magnitude of the output voltage Vo is:

Duty cycle for repetitive waveform is defined as

As compared to FET, BJT has ________ input impedance and ________ output impedance.

IC 555 is used for

A forward potential of 10 V is applied to a Si diode. A resistance of 1 KΩ is in series with the diode. The current through the diode is

The resistivity of intrinsic semiconductor material is about

N-type silicon is obtained by doping silicon with

Work function of oxide coated cathode is much lower than that of tungsten cathode.

Epitaxial growth is used in ICs

Assertion (A): In a BJT base current is very small.Reason (R): In a BJT recombination in base region is high.

What is the effect of cut in voltage on the wave form of output as compared to input in a semiconductor diode?

Assertion (A): When Diode used as rectifier the reverse breakdown voltage should not be exceeded.Reason (R): A high inverse voltage can destroy a p-n junction.

For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to about

In n type semiconductor, the free electron concentration

Assertion (A): In CE connection of n-p-n transistor. VCE is positive. Reason (R): In BJT, the base collector junction is reverse biased.

Photo electric emission can occur only if

Which of these has highly doped p and n region?

An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is

Fermi level is the maximum energy that an electron can possess at 0 K.

Reluctivity is analogous to

In an intrinsic semiconductor, the intrinsic charge concentration at any absolute temperature T is proportional to

The light output of LED varies as (current)ⁿ. The value of n is about

If both the emitter base and the collector base junctions of a bipolar transistor are forward biased, the transistor is in the

Hall effect can be used to find the type of semiconductor.

The current due to thermionic emission is proportional to

The output characteristics of a bipolar transistor has three distinct regions. They are known as

Assertion (A): When light falls at junction of p-n photodiode, its p side becomes positive and n side becomes negative.Reason (R): When a photodiode is short circuited, the current in the external circuit flows from p side to n side.

The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification

The cut in voltage of a diode is nearly equal to

The turn on time of an SCR is 5 micro second. Its trigger pulse should have

Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr) for similar geometry?

If αac for transistor is 0.98 then βac is equal to

Assertion (A): The amount of photoelectric emission depends on the intensity of incident light.Reason (R): Photo electric emission can occur only if frequency of incident light is less than threshold frequency.

As compared to FET, BJT has input impedance and output impedance.